Overtone spectra of styrene and polystyrene in the visible and near infrared regions

Vibrational overtone spectra of styrene (liquid) and polystyrene (solid), studied by the laser-induced thermal lens (for ΔV=6) and the conventional near infrared absorption (for ΔV=3–5) techniques, are reported. For polystyrene, the overtone energy-bond length correlation predicts that the aryl CH bonds are ∼0.0005 Å longer than that in benzene, while no such conclusions could be drawn on styrene. Thesp 3 CH overtones in polystyrene are observed on the low energy side of the aryl CH overtones.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Use of photoacoustic effect for the detection of phase transitions in liquid crystal mixtures

We report on a laser induced photoacoustic study of the nematic-to-isotropic transition in certain commercial nematic liquid crystal mixtures, namely BL001, BL002, BL032 and BL035. A simple analysis of the experimental data using the Rosencwaig–Gersho theory shows that the heat capacities of all these compounds exhibit a sharp peak as the temperature of the sample is varied across the transition region. Also, substantial differences in the photoacoustic signal amplitudes in nematic and isotropic phases have been noticed for all the mixtures. The increased light scattering property of the nematic phase may be the reason for the enhanced photoacoustic signal amplitude in this phase.

Use of photoacoustic effect for the detection of phase transitions in liquid crystal mixtures

We report on a laser induced photoacoustic study of the nematic-to-isotropic transition in certain commercial nematic liquid crystal mixtures, namely BL001, BL002, BL032 and BL035. A simple analysis of the experimental data using the Rosencwaig–Gersho theory shows that the heat capacities of all these compounds exhibit a sharp peak as the temperature of the sample is varied across the transition region. Also, substantial differences in the photoacoustic signal amplitudes in nematic and isotropic phases have been noticed for all the mixtures. The increased light scattering property of the nematic phase may be the reason for the enhanced photoacoustic signal amplitude in this phase

Use of photoacoustic effect for the detection of phase transitions in liquid crystal mixtures

We report on a laser induced photoacoustic study of the nematic-to-isotropic transition in certain commercial nematic liquid crystal mixtures, namely BL001, BL002, BL032 and BL035. A simple analysis of the experimental data using the Rosencwaig–Gersho theory shows that the heat capacities of all these compounds exhibit a sharp peak as the temperature of the sample is varied across the transition region. Also, substantial differences in the photoacoustic signal amplitudes in nematic and isotropic phases have been noticed for all the mixtures. The increased light scattering property of the nematic phase may be the reason for the enhanced photoacoustic signal amplitude in this phase.

Young’s modulus of silicon nitride used in scanning force microscope cantilevers

The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness

Thermal diffusivity of some polymer supported halogeno benzimidazole complexes of cobalt(II) and copper(II) - a photoacoustic study

The thermal diffusivities of some polystyrene supported Schiff complexes of Co(II) and Cu(II) were determined by the laser induced photoacoustic technique. The effect of metal as well as the halogen part on thermal diffusivity of polymer supported complexes was studied. The thermal diffusivity of Co complexes increases while it decreases in Cu complexes with Cl, Br and I substitutions, respectively.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

Photoacoustic Thermal Characterization of Porous Rare-Earth Phosphate Ceramics

The laser induced non-destructive photoacoustic technique has been employed to measure the thermal diffusivity of lanthanum phosphate ceramics prepared by the sol–gel route. The thermal diffusivity value was evaluated by knowing the transition frequency between the thermally thin to thermally thick region from the log–log plot of photoacoustic amplitude versus chopping frequency. Analysis of the data was carried out on the basis of the one-dimensional model of Rosencwaig and Gersho. The present investigation reveals that the sintering temperature has great influence on the propagation of heat carriers and hence on the thermal diffusivity value. The results were interpreted in terms of variations in porosity with sintering temperature as well as with changes in grain size.

Thermal characterization of nanocrystalline porous CePO4 ceramics

A laser-induced photoacoustic technique was employed to investigate thermal transport through nanocrystalline CePO4 samples prepared via the sol–gel route. Evaluation of thermal diffusivity was carried out using the one-dimensional model of Rosencwaig and Gersho for the reflection configuration of the photoacoustic method. Structural analyses of samples revealed that they are nanoporous in nature, possessing micron-sized grains. Analysis of results shows that thermal diffusivity value varies with sintering temperature. Results are explained in terms of the variation in porosity with sintering temperature and the effects of various scattering mechanisms on the propagation of phonons through the nanoporous ceramic matrix. Further analyses confirm that apart from porosity, grain boundary resistance and interface thermal resistance influence the effective value of thermal diffusivity of the samples under investigation.

Photoacoustic thermal characterization of Al2O3–Ag ceramic nanocomposites

Laser-induced nondestructive photoacoustic (PA) technique has been employed to determine the thermal diffusivity of nanometal (Ag) dispersed ceramic alumina matrix sintered at different temperatures. The thermal diffusivity values are evaluated by knowing the transition frequency from the amplitude spectrum of PA signal using the one-dimensional heat flow model of Rosencwaig and Gersho. Analysis of the data shows that heat transport and hence the thermal diffusivity value is greatly affected by the influence of incorporation of foreign atom. It is also seen that sintering temperature affects the thermal diffusivity value in a substantial manner. The results are interpreted in terms of variation in porosity and carrier-assisted heat transport mechanism in nanometal dispersed ceramics.

The photoemission optogalvanic effect in a Ne-Nd hollow cathode

Laser-induced photoelectric and photoemission optogalvanic effects in a Ne-Nd hollow cathode discharge have been studied using a continuous wave laser source. The potential barrier for photoinduced electron emission from the cathode decreases as the applied voltage is increased. Owing to secondary electron emission in the plasma, the photocurrent is greater than that without discharge. The multiplication of secondary electrons and the quantum efficiency are also investigated.

Photoluminescence studies on rare earth titanates prepared by self-propagating high temperature synthesis method

The laser-induced luminescence studies of the rare earth titanates (R2Ti2O7) (R = La, Nd and Gd) using 355 nm radiation from an Nd:YAG laser are presented. These samples with submicron or nanometer size are prepared by the self-propagating high temperature synthesis (SHS) method and there is no known fluorescence shown by these rare earths in the visible region. Hence, the luminescence transitions shown by the La2Ti2O7 near 610 nm and Gd2Ti2O7 near 767 nm are quite interesting. Though La3+ ions with no 4f electrons have no electronic energy levels that can induce excitation and luminescence processes in the visible region, the presence of the Ti3+ ions leads to luminescence in this region.