49 resultados para Surface Electron Donating Properties


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Fine particles of cobalt ferrite were synthesized by the sol–gel method. Subsequent heat treatment at different temperatures yielded cobalt ferrites having different grain sizes. X-ray diffraction studies were carried out to elucidate the structure of all the samples. Dielectric permittivity and ac conductivity of all the samples were evaluated as a function of frequency, temperature and grain size. The variation of permittivity and ac conductivity with frequency reveals that the dispersion is due to Maxwell–Wagner type interfacial polarization in general, with a noted variation from the expected behaviour for the cold synthesized samples. High permittivity and conductivity for small grains were explained on the basis of the correlated barrier-hopping model

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Silver silica nanocomposites were obtained by the sol–gel technique using tetraethyl orthosilicate (TEOS) and silver nitrate (AgNO3) as precursors. The silver nitrate concentration was varied for obtaining composites with different nanoparticle sizes. The structural and microstructural properties were determined by x-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). X-ray photoelectron spectroscopic (XPS) studies were done for determining the chemical states of silver in the silica matrix. For the lowest AgNO3 concentration, monodispersed and spherical Ag crystallites, with an average diameter of 5 nm, were obtained. Grain growth and an increase in size distribution was observed for higher concentrations. The occurrence of surface plasmon resonance (SPR) bands and their evolution in the size range 5–10 nm is studied. For decreasing nanoparticle size, a redshift and broadening of the plasmon-related absorption peak was observed. The observed redshift and broadening of the SPR band was explained using modified Mie scattering theory

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Ultra thin films based on CoFe were prepared from a composite target employing thermal evaporation. The microstructure of the films was modified by thermal annealing. The relationship between microstructure and magnetic properties of the films was investigated using techniques like glancing angle X-ray diffraction (GXRD), transmission electron microscopy (TEM) and vibrating sample magnetometry (VSM). The GXRD and TEM investigations showed an onset of crystallization of CoFe at around 373 K. The magnetic softness of the films improved with thermal annealing but at higher annealing temperature it is found to be deteriorating. Annealing inducedmodification of surface morphology of the alloy thin filmswas probed by atomic force microscopy (AFM). Surface smoothening was observed with thermal annealing and the observed magnetic properties correlate well with surface modifications induced by thermal annealing

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Organic-inorganic nanocomposites combine unique properties of both the constituents in one material. Among this group of materials, clay based as well as ZnO, TiO2 nanocomposites have been found to have diverse applications. Optoelectronic devices require polymerinorganic systems to meet certain desired properties. Dielectric properties of conventional polymers like poly(ethylene-co-vinyl acetate) (EVA) and polystyrene (PS) may also be tailor tuned with the incorporation of inorganic fillers in very small amounts. Electrical conductivity and surface resistivity of polymer matrices are found to improve with inorganic nanofillers. II-VI semiconductors and their nano materials have attracted material scientists because of their unique optical properties of photoluminescence, UV photodetection and light induced conductivity. Cadmium selenide (CdSe), zinc selenide (ZnSe) and zinc oxide (ZnO) are some of the most promising members of the IIVI semiconductor family, used in light-emitting diodes, nanosensors, non-linear optical (NLO) absorption etc. EVA and PS materials were selected as the matrices in the present study because they are commercially used polymers and have not been the subject of research for opto-electronic properties with semiconductor nanomaterials