48 resultados para Structural and electrical properties


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Two stage processes consisting of precursor preparation by thermal evaporation followed by chalcogenisation in the required atmosphere is found to be a feasible technique for the PV materials such as n-Beta In2S3, p-CulnSe2, p-CulnS2 and p-CuIn(Sel_xSx)2. The growth parameters such as chalcogenisation temperature and duration of chalcogenisation etc have been optimised in the present study.Single phase Beta-In2S3 thin films can be obtained by sulfurising the indium films above 300°C for 45 minutes. Low sulfurisation temperatures required prolonged annealing after the sulfurisation to obtain single phase Beta-1n2S3, which resulted in high material loss. The maximum band gap of 2.58 eV was obtained for the nearly stoichiometric Beta-In2S3 film which was sulfurised at 350°C. This wider band gap, n type Beta-In2S3 can be used as an alternative to toxic CdS as window layer in photovoltaics .The systematic study on the structural optical and electrical properties of CuInSe2 films by varying the process parameters such as the duration of selenization and the selenization temperature led to the conclusion that for the growth of single-phase CuInSe2, the optimum selenization temperature is 350°C and duration is 3 hours. The presence of some binary phases in films for shorter selenization period and lower selenization temperature may be due to the incomplete reaction and indium loss. Optical band gap energy of 1.05 eV obtained for the films under the optimum condition.In order to obtain a closer match to the solar spectrum it is desirable to increase the band gap of the CulnSe2 by a few meV . Further research works were carried out to produce graded band gap CuIn(Se,S)2 absorber films by incorporation of sulfur into CuInSe2. It was observed that when the CulnSe2 prepared by two stage process were post annealed in sulfur atmosphere, the sulfur may be occupying the interstitial positions or forming a CuInS2 phase along with CuInSe2 phase. The sulfur treatment during the selenization process OfCu11 ln9 precursors resulted in Culn (Se,S)2 thin films. A band gap of 1.38 eV was obtained for the CuIn(Se,S)2.The optimised thin films n-beta 1n2S3, p-CulnSe2 and p-Culn(Sel-xSx)2 can be used for fabrication of polycrystalline solar cells.

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The microwave and electrical applications of some important conducting polymers are analyzed in this investigation.One of the major drawbacks of conducting polymers is their poor processability,and a solution to overcome this is sought in this investigation.Conducting polymer thermoplastic composites were prepared by the insitu polymerization method to improve the extent of miscibility probably to a semi IPN level.The attractive features of the conducting composite developed are excellent processability,good microwave and electrical conductivity,good microwave absorption,load sensitivity and satisfactory mechanical properties.The composite shows typical frequency selective microwave absorption and refelection behaviors.

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In the present study the preparation and characterisation of rubber ferrite composites containing nickel ferrite and gamma ferric oxide have been dealt with.Synthetic rubbers viz. ethylene propylene diene rubber and neoprene rubber were used for the incorporation of nickel ferrite and gamma ferric oxide for the synthesis of RFCs. Incorporation of ferrites were carried out according to a specific recipe for various loadings of the magnetic fillers. The ferrites used for the preparation of RFCs were synthesised using sol-gel method and structural characterisation was carried out. Experimental techniques like X-ray diffraction, Transmission electron microscopy and other analytical techniques were used for this. Precharaterised ferrites were then incorporated at different loading into rubber according to conventional mixing methods. The cure characteristics, mechanical, dielectric, magnetic and microwave properties of these composites were evaluated. The effect of carbon black on these properties of RFCs were carried out.