27 resultados para tungsten dopant
Photoemission optogalvanic effect studies in N2, NO2 and Ar discharges under pulsed laser excitation
Resumo:
A two-photon induced photoemission optogalvanic effect which brings about a change in the discharge voltage when a pulsed dye laser beam is focused on a tungsten electrode has been described. The experiment is performed with N2, NO2 and Ar discharges. The magnitude of the signal voltage is studied as a function of laser energy and discharge current. The effective quantum efficiency in the discharge is found to be larger than that in the vacuum condition.
Resumo:
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.
Resumo:
Observation of laser induced two-photon photoemission optogalvanic (TPPOG) effect from tungsten electrode in a discharge cell using 564 nm radiation obtained from a pulsed dye laser is described. The magnitude of the POG signal is studied as a function of laser energy under various discharge parameters. Competition between one-photon and two-photon processes has been observed when nitrogen gas is used in the discharge cell.
Resumo:
This thesis has focused on the synthesis and analysis of some important phosphors (nano, bulk and thin film) for display applications. ACTFEL device with SrS:Cu as active layer was also fabricated.Three bulk phosphors: SrS:Cu,CI; SrS:Dy,Cl; and SrS:Dy,Cu,Cl were synthesized and their structural, optical and electrical properties were investigated. Special emphasis was given to, the analysis of the role of defects and charge compensating centers, on the structural changes of the host and hence the luminance. A new model describing the sensitizing behaviour of Cu in SrS:Dy,Cu,Cl two component phosphor was introduced. It was also found that addition of NH4CI as flux in SrS:Cu caused tremendous improvement in the structural and luminescence properties.A novel technique for ACTFEL phosphor deposition at low temperature was introduced. Polycrystalline films of SrS:Cu,F were synthesized at low temperature by concomitant evaporation of host and dopant by electron beam evaporation and thermal evaporatin methods.Copper doped strontium sulphide nanophosphor was synthesized for the first time. Improvement in the luminescence properties was observed in the nanophosphor with respect to it' s bulk counterpart.
Resumo:
The effect of Ce3+ on the fluorescence emission from CaS:Ce3+ phosphor is studied using X-ray excitation. Apart from the emission in the visible region, the phosphor also shows fluorescence emission in the ultraviolet region. Variation in wavelengths and intensities of these emissions due to change in dopant concentration is also analysed.
Resumo:
The objective of the present work is to study the effect of rare-earth (RE) doping on the superconducting properties of (Bi,Pb)-2212 system and to develop novel superconductors in the system with improved properties, especially, the self- and in-field critical current densities so as to use them for practical applications. This dissertation describes a range of findings in Bi-based superconductor using the cationic substitution of rare earth (RE) elements. Most of the experiments reported here take advantage of the difference in the valency and ionic radii of dopant and doping site.
Resumo:
One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.
Resumo:
Tellurite glasses are photonic materials of special interest to the branch of optoelectronic and communication, due to its important optical properties such as high refractive index, broad IR transmittance, low phonon energy etc. Tellurite glasses are solutions to the search of potential candidates for nonlinear optical devices. Low phonon energy makes it an efficient host for dopant ions like rare earths, allowing a better environment for radiative transitions. The dopant ions maintain majority of their individual properties in the glass matrix. Tellurites are less toxic than chalcogenides, more chemically and thermally stable which makes them a highly suitable fiber material for nonlinear applications in the midinfrared and they are of increased research interest in applications like laser, amplifier, sensor etc. Low melting point and glass transition temperature helps tellurite glass preparation easier than other glass families. In order to probe into the versatility of tellurite glasses in optoelectronic industry; we have synthesized and undertaken various optical studies on tellurite glasses. We have proved that the highly nonlinear tellurite glasses are suitable candidates in optical limiting, with comparatively lower optical limiting threshold. Tuning the optical properties of glasses is an important factor in the optoelectronic research. We have found that thermal poling is an efficient mechanism in tuning the optical properties of these materials. Another important nonlinear phenomenon found in zinc tellurite glasses is their ability to switch from reverse saturable absorption to saturable absorption in the presence of lanthanide ions. The proposed thesis to be submitted will have seven chapters
Resumo:
The objective of the present work is to improve the textural and structural properties of cerium oxide by the incorporation of transition metals as well as sulphate ions. We have incorporated tungsten, molybdenum and chromium oxide into pure as well as sulphated cerium oxide and the catalytic systems thus prepared were characterised using various techniques. lndustrially important reactions such as acetalization and deacetalization, oxidative dehydrogenation of ethylbenzene, MTBE synthesis and Beckmann rearrangement of cinnamaldoxime and salicylaldoxime have been selected for the measurement of the catalytic activity of the systems. The work is presented in eight chapters
Resumo:
Superparamagnetic nanocomposites based on g-Fe2O3 and sulphonated polystyrene have been synthesized by ion exchange process and the preparation conditions were optimized. Samples were subjected to cycling to study the effect of cycling on the magnetic properties of these composites. The structural and magnetization studies have been carried out. Magnetization studies show the dependence of magnetization on the number of ion exchange cycles. Doping of cobalt at the range in to the g-Fe2O3 lattice was effected in situ and the doping was varied in the atomic percentage range 1–10. The exact amount of cobalt dopant as well as the iron content was estimated by Atomic Absorption Spectroscopy. The effect of cobalt in modifying the properties of the composites was then studied and the results indicate that the coercivity can be tuned by the amount of cobalt in the composites. The tuning of both the magnetization and the coercivity can be achieved by a combination of cycling of ion exchange and the incorporation of cobalt
Resumo:
The magnetic properties of Mn-doped ZnO (ZnO:Mn) nanorods grown by hydrothermal process at a temperature of 200 8C and a growth time of 3 h have been studied. The samples were characterized by using powder X-ray diffraction with Rietveld refinement, scanning electron microscopy, energy-dispersive X-ray analysis and SQUID magnetometry. Mn (3 wt%) and (5 wt%)-doped ZnO samples exhibit paramagnetic and ferromagnetic behavior, respectively, at room temperature. The spin-glass behavior is observed from the samples with respect to the decrease of temperature. At 10 K, both samples exhibit a hysteresis loop with relatively low coercivity. The room-temperature ferromagnetism in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries, interaction between dopant Mn2þ ions substituted at Zn2þ site and the interaction between Mn2þ ions and Zn2þ ions from the ZnO host lattice
Resumo:
In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In2S3 electron selective layer (active area of 3.25 3.25 cm2) was also fabricated and tested under indoor and outdoor conditions. Fromthe indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an opencircuit voltage of 0.41V and a short-circuit current of 5.6mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46V and a short-circuit current of 9.37mA