Influence of Interface Surface Geometries In The Tensile Characteristics Of Friction Welded Joints From Aluminium Alloys

Friction welding is a solid state joining process that produces coalescence in materials, using the heat developed between surfaces through a combination of mechanical induced rubbing motion and applied load. In rotary friction welding technique heat is generated by the conversion of mechanical energy into thermal energy at the interface of the work pieces during rotation under pressure. Traditionally friction welding is carried out on a dedicated machine because of its adaptability to mass production. In the present work, steps were made to modify a conventional lathe to rotary friction welding set up to obtain friction welding with different interface surface geometries at two different speeds and to carry out tensile characteristic studies. The surface geometries welded include flat-flat, flat-tapered, tapered-tapered, concave-convex and convex-convex. A comparison of maximum load, breaking load and percentage elongation of different welded geometries has been realized through this project. The maximum load and breaking load were found to be highest for weld formed between rotating flat and stationary tapered at 500RPM and the values were 19.219kN and 14.28 kN respectively. The percentage elongation was found to be highest for weld formed between rotating flat and stationary flat at 500RPM and the value was 21.4%. Hence from the studies it is cleared that process parameter like “interfacing surface geometries” of weld specimens have strong influence on tensile characteristics of friction welded joints

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2