Matrix based Key Generation to Enhance Key Avalanche in Advanced Encryption Standard

In symmetric block ciphers, substitution and diffusion operations are performed in multiple rounds using sub-keys generated from a key generation procedure called key schedule. The key schedule plays a very important role in deciding the security of block ciphers. In this paper we propose a complex key generation procedure, based on matrix manipulations, which could be introduced in symmetric ciphers. The proposed key generation procedure offers two advantages. First, the procedure is simple to implement and has complexity in determining the sub-keys through crypt analysis. Secondly, the procedure produces a strong avalanche effect making many bits in the output block of a cipher to undergo changes with one bit change in the secret key. As a case study, matrix based key generation procedure has been introduced in Advanced Encryption Standard (AES) by replacing the existing key schedule of AES. The key avalanche and differential key propagation produced in AES have been observed. The paper describes the matrix based key generation procedure and the enhanced key avalanche and differential key propagation produced in AES. It has been shown that, the key avalanche effect and differential key propagation characteristics of AES have improved by replacing the AES key schedule with the Matrix based key generation procedure

Spray pyrolysed In2S3 thin films: A potential electron selective layer for large area inverted bulk-heterojunction polymer solar cells

In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In2S3 electron selective layer (active area of 3.25 3.25 cm2) was also fabricated and tested under indoor and outdoor conditions. Fromthe indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an opencircuit voltage of 0.41V and a short-circuit current of 5.6mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46V and a short-circuit current of 9.37mA