65 resultados para Glass preparation
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Ceramics of composition BaO-Ln2O3-STiO2 have been prepared with four elements (Ln=La,Pr,Nd.Sm) by a conventional solid state ceramic preparation route and the dielectric properties measured in the microwave frequency range
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The dielectric ceramics BaNd2Ti3Oto, BaNd2Ti4O12 and BaNd2Ti5O14 have been prepared by Conventional solid state ceramic route. The sintered ceramic samples have been characterized by X-ray diffraction and Scanning Electron Microscopy (SEM). The dielectric properties in the microwave frequency range have been measured using conventional microwave dielectric resonator methods. The BaNd2Ti1O10, BaN2Ti4O12 and BaNd2Ti5O14 have dielectric constants (Er) ~ 60, 84 and 77 respectively. They have relatively high quality factors
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Microwave ceramic dielectric resonators (DRs) based on RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) have been prepared using the conventional solid -state ceramic route. The DR samples are characterized using XRD and SEM methods. The microwave dielectric properties are measured using resonant methods and a net work analyzer . The ceramics based on Ce, Pr, Nd, and Sin have dielectric constants in the range 32-54 and positive coefficient of thermal variation of resonant frequency (r,). The ceramics based on Gd, Tb, Dy, Y. and Yb have dielectric constants in the range 19-22 and negative Tf
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Microwave dielectric resonators (DRs) based on Ba(B1,2Nbi/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In] complex perovskites have been prepared by conventional solid state ceramic route. The dielectric properties (relative permittivity, Er; quality factor, Q; and resonant frequency, rr) of the ceramics have been measured in the frequency range 4-6 GHz using resonance methods. The resonators have relatively high dielectric constant in the range 36-45, high quality factor and small temperature variation of resonant frequency. The dielectric properties are found to depend on the tolerance factor (t), ionic radius (r), and lattice parameter (ap)
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The effect of glass additives on the densification , phase evolution, microstructure and microwave dielectric properties of Ba(Mg1;3 Ta2i3)03 (BMT) was investigated . Different weight percentages of quenched glass such as B203 , Si02, B203-SiO2, ZnO-B203, 5ZnO-2B2O3, Al203-SiO2, Na20-2B203.10H20, BaO-B203-SiO2, MgO-B203-SiO2, PbO-B203-SiO2 , ZnO-B203-SiO2 and 2MgO-Al203-5SiO2 were added to calcined BMT precursor . The sintering temperature of the glass -added BMT samples were lowered down to 1300 °C compared to solid-state sintering where the temperature was 1650 °C. The formation of high temperature satellite phases such as Ba5Ta4O15 and Ba7Ta6O22 were found to be suppressed by the glass addition . Addition of glass systems such as B203, ZnO-B203, 5ZnO-2B203 and ZnO-B203-SiO2 improved the densification and microwave dielectric properties. Other glasses were found to react with BMT to form low-Q phases which prevented densification . The microwave dielectric properties of undoped BMT with a densification of 93 . 1 % of the theoretical density were Cr = 24 . 8, Tr = 8 ppm/°C and Q„ x f= 80,000 GHz. The BMT doped with 1.0 wt% of B203 has Q„ x f = 124,700GHz, Cr = 24.2, and T f = -1.3 ppm /°C. The unloaded Q factor of 0.2 wt% ZnO-B203-doped BMT was 136,500 GHz while that of 1.0 wt% of 5ZnO-2B203 added ceramic was Q„ x f= 141,800 GHz . The best microwave quality factor was observed for ZnO -B203-SiO2 (ZBS) glass-added ceramics which can act as a perfect liquid-phase medium for the sintering of BMT. The microwave dielectric properties of 0.2wt% ZBS-added BMT dielectric was Q„ x f= 152,800 GHz, F,= 25.5, and Tr = - 1.5 ppm/°C
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Highly crystalline, ultra fine TiO (anatase) having high surface area has been prepared by thermal hydrolysis of titanyl sulphate 2 solution and characterized using B.E.T surface area measurements, XRD and chemical analysis. The dependence of surface area on concentration of staffing solution, temperature of hydrolysis, duration of boiling and calcination temperature were also studied. As the boiling temperature, duration of boiling and calcination temperature increased, the surface area of TiO formed decreased significantly. 2 On increasing calcination temperature, the crystallite size of TiO also increased and gradually the phase transformation to rutile took 2 place. The onset and completion temperatures of rutilation were 700 and 10008C, respectively
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Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.
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chemical Sciences and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR
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Poly(propylene) (PP) reinforced with short glass fiber was modified with precipitated nanosilica (pnS) by melt mixing. The weight of the glass fiber was varied by keeping the pnS at optimum level. The properties of the composites were studied using universal testing machine, dynamic mechanic analyser (DMA), differential Scanning calorimetry (DSC) and thermo gravimetric analyser (TGA). The amount of the glass fiber required for a particular modulus could be reduced by the addition of nanosilica.
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Low-protein content natural rubber latex was produced by using a nonionic surfactant-polyethylene glycol (PEG). Extractable protein content of natural rubber latex was found to decrease with PEG treatment and reduction increased with increase in the molecular weight of PEG. The low-protein latex samples were characterized by tensile testing, Fourier transform infrared and thermogravimetric analysis. The results have shown 35% reduction in the extractable protein content, without any compromise on the mechanical properties of the latex; however, thermal stability of low-protein latex was found to be reduced marginally with PEG treatment.
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Dept.of Applied Chemistry,Cochin University of Science and Technology