62 resultados para DIFFUSIVITY


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In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature.

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In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature

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In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature

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Complete thermal characterization of liquid crystal mixtures in the smectic phase consisting of various relative volume fractions of cholesterol and 1-hexadecanol have been carried out using the photoacoustic technique. Thermal diffusivity values of these liquid crystal mixtures are evaluated using the open cell photoacoustic technique whereas the thermal effusivity value is measured using the conventional photoacoustic technique. From the measured values of these transient thermophysical parameters, the thermal conductivity and heat capacity of the sample under investigation are calculated. Analyses of the results show that all the thermophysical parameters depend strongly on the volume fraction of the constituents. Results are interpreted in terms of enhanced hydrogen bonding and the consequent enhancement in cohesive thermal energy transport with increasing volume fraction of 1-hexadecanol

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Complete thermal characterization of liquid crystal mixtures in the smectic phase consisting of various relative volume fractions of cholesterol and 1-hexadecanol have been carried out using the photoacoustic technique. Thermal diffusivity values of these liquid crystal mixtures are evaluated using the open cell photoacoustic technique whereas the thermal effusivity value is measured using the conventional photoacoustic technique. From the measured values of these transient thermophysical parameters, the thermal conductivity and heat capacity of the sample under investigation are calculated. Analyses of the results show that all the thermophysical parameters depend strongly on the volume fraction of the constituents. Results are interpreted in terms of enhanced hydrogen bonding and the consequent enhancement in cohesive thermal energy transport with increasing volume fraction of 1-hexadecanol

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Complete thermal characterization of liquid crystal mixtures in the smectic phase consisting of various relative volume fractions of cholesterol and 1-hexadecanol have been carried out using the photoacoustic technique. Thermal diffusivity values of these liquid crystal mixtures are evaluated using the open cell photoacoustic technique whereas the thermal effusivity value is measured using the conventional photoacoustic technique. From the measured values of these transient thermophysical parameters, the thermal conductivity and heat capacity of the sample under investigation are calculated. Analyses of the results show that all the thermophysical parameters depend strongly on the volume fraction of the constituents. Results are interpreted in terms of enhanced hydrogen bonding and the consequent enhancement in cohesive thermal energy transport with increasing volume fraction of 1-hexadecanol

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In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

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In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

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In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

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Thermal diffusivity of the composites of camphor sulphonic acid (CSA) doped polyaniline (PANI) and its composites with cobalt phthalocyanine (CoPc) has been measured using open cell photoacoustic technique. Analysis of the data shows that the effective thermal diffusivity value can be tuned by varying the relative volume fraction of the constituents. It is seen that polaron assisted heat transfer mechanism is dominant in CSA doped PANI and these composites exhibit a thermal diffusivity value which is intermediate to that of CSA doped PANI and CoPc. The results obtained are correlated with the electrical conductivity and hardness measurements carried out on the samples

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Thermal diffusivity of the composites of camphor sulphonic acid (CSA) doped polyaniline (PANI) and its composites with cobalt phthalocyanine (CoPc) has been measured using open cell photoacoustic technique. Analysis of the data shows that the effective thermal diffusivity value can be tuned by varying the relative volume fraction of the constituents. It is seen that polaron assisted heat transfer mechanism is dominant in CSA doped PANI and these composites exhibit a thermal diffusivity value which is intermediate to that of CSA doped PANI and CoPc. The results obtained are correlated with the electrical conductivity and hardness measurements carried out on the samples.

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors