16 resultados para Ternary


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The dynamic mechanical properties such as storage modulus, loss modulus and damping properties of blends of nylon copolymer (PA6,66) with ethylene propylene diene (EPDM) rubber was investigated with special reference to the effect of blend ratio and compatibilisation over a temperature range –100°C to 150°C at different frequencies. The effect of change in the composition of the polymer blends on tanδ was studied to understand the extent of polymer miscibility and damping characteristics. The loss tangent curve of the blends exhibited two transition peaks, corresponding to the glass transition temperature (Tg) of individual components indicating incompatibility of the blend systems. The morphology of the blends has been examined by using scanning electron microscopy. The Arrhenius relationship was used to calculate the activation energy for the glass transition of the blends. Finally, attempts have been made to compare the experimental data with theoretical models.

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The catalyst compositions of the Zn1−xCOxFe2O4 (x= 0, 0.2, 0.5, 0.8 and 1.0) spiel series possessing ‘x’ values, x less than or equal to 0.5, are unique for selective N-monomethylation of aniline using methanol as the alkylating agent. Since dimethyl carbonate (DMC) is another potential non-toxic alkylating agent, alkylation of aniline was investigated over various Zn–Co ferrites using DMC as the alkylating agent. The merits and demerits of the two alkylating agents are compared. Catalytic activity followed a similar trend with respect to the composition of the ferrospinel systems. DMC is active at comparatively low temperature, where methanol shows only mild activity. However, on the selectivity basis, DMC as an alkylating agent could not compete with methanol, since the former gave appreciable amounts of N,N-dimethylaniline (NNDMA) even at low temperature where methanol gave nearly 99% N-methylaniline (NMA) selectivity. As in the case of methanol, DMC also did not give any C-alkylated products.

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The surface acidity and basicity of ternary oxides of La, Ce and AI have been determined using a set of Hammett indicators. The data have been correlated with the catalytic activity of these oxides towards the liquid phase reduction of cycIohexanone in 2-propanol.

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The surface acidity and basicity of ternary oxides of AI, Ce and Dy have been determined using a set of Hammett indicators. The data have been correlated with the catalytic activity of these oxides towards the liquid phase reduction of cyclohexanone in 2-propanol. The reaction is favoured by the higher basicity of the ternary oxide.

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Spinel systems with the composition of Cu 1−x Zn x Cr 2 O 4 [x = 0 CCr, x = 0.25 CZCr-1, x = 0.5 CZCr-2, x = 0.75 CZCr-3 and x = 1 ZCr] were prepared by homogeneous co-precipitation method and were characterized by X-ray diffraction (XRD) and FT-IR spectroscopy. Elemental analysis was done by EDX, and surface area measurements by the BET method. The redox behavior of these catalysts in cyclohexane oxidation at 243 K using TBHP as oxidant was examined. Cyclohexanone was the major product over all catalysts with some cyclohexanol. 69.2% selectivity to cyclohexanol and cyclohexanone at 23% conversion of cyclohexane was realized over zinc chromite spinels in 10 h.

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Retrieval of similar anatomical structures of brain MR images across patients would help the expert in diagnosis of diseases. In this paper, modified local binary pattern with ternary encoding called modified local ternary pattern (MOD-LTP) is introduced, which is more discriminant and less sensitive to noise in near-uniform regions, to locate slices belonging to the same level from the brain MR image database. The ternary encoding depends on a threshold, which is a user-specified one or calculated locally, based on the variance of the pixel intensities in each window. The variancebased local threshold makes the MOD-LTP more robust to noise and global illumination changes. The retrieval performance is shown to improve by taking region-based moment features of MODLTP and iteratively reweighting the moment features of MOD-LTP based on the user’s feedback. The average rank obtained using iterated and weighted moment features of MOD-LTP with a local variance-based threshold, is one to two times better than rotational invariant LBP (Unay, D., Ekin, A. and Jasinschi, R.S. (2010) Local structure-based region-of-interest retrieval in brain MR images. IEEE Trans. Inf. Technol. Biomed., 14, 897–903.) in retrieving the first 10 relevant images

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In recent years scientists have made rapid and significant advances in the field of semiconductor physics. One of the most important fields of current interest in materials science is the fundamental aspects and applications of conducting transparent oxide thin films (TCO). The characteristic properties of such coatings are low electrical resistivity and high transparency in the visible region. The first semitransparent and electrically conducting CdO film was reported as early as in 1907 [1]. Though early work on these films was performed out of purely scientific interest, substantial technological advances in such films were made after 1940. The technological interest in the study of transparent semiconducting films was generated mainly due to the potential applications of these materials both in industry and research. Such films demonstrated their utility as transparent electrical heaters for windscreens in the aircraft industry. However, during the last decade, these conducting transparent films have been widely used in a variety of other applications such as gas sensors [2], solar cells [3], heat reflectors [4], light emitting devices [5] and laser damage resistant coatings in high power laser technology [6]. Just a few materials dominate the current TCO industry and the two dominant markets for TCO’s are in architectural applications and flat panel displays. The architectural use of TCO is for energy efficient windows. Fluorine doped tin oxide (FTO), deposited using a pyrolysis process is the TCO usually finds maximum application. SnO2 also finds application ad coatings for windows, which are efficient in preventing radiative heat loss, due to low emissivity (0.16). Pyrolitic tin oxide is used in PV modules, touch screens and plasma displays. However indium tin oxide (ITO) is mostly used in the majority of flat panel display (FPD) applications. In FPDs, the basic function of ITO is as transparent electrodes. The volume of FPD’s produced, and hence the volume of ITO coatings produced, continues to grow rapidly. But the current increase in the cost of indium and the scarcity of this material created the difficulty in obtaining low cost TCOs. Hence search for alternative TCO materials has been a topic of active research for the last few decades. This resulted in the development of binary materials like ZnO, SnO2, CdO and ternary materials like II Zn2SnO4, CdSb2O6:Y, ZnSO3, GaInO3 etc. The use of multicomponent oxide materials makes it possible to have TCO films suitable for specialized applications because by altering their chemical compositions, one can control the electrical, optical, chemical and physical properties. But the advantages of using binary materials are the easiness to control the chemical compositions and depositions conditions. Recently, there were reports claiming the deposition of CdO:In films with a resistivity of the order of 10-5 ohm cm for flat panel displays and solar cells. However they find limited use because of Cd-Toxicity. In this regard, ZnO films developed in 1980s, are very useful as these use Zn, an abundant, inexpensive and nontoxic material. Resistivity of this material is still not very low, but can be reduced through doping with group-III elements like In, Al or Ga or with F [6]. Hence there is a great interest in ZnO as an alternative of ITO. In the present study, we prepared and characterized transparent and conducting ZnO thin films, using a cost effective technique viz Chemical Spray Pyrolysis (CSP). This technique is also suitable for large area film deposition. It involves spraying a solution, (usually aqueous) containing soluble salts of the constituents of the desired compound, onto a heated substrate.

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Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

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Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.

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The surface acidity and basicity of binary oxides of Zr with Ce and La are determined using a series of Hammet indicators and Ho,,max values are reported. The generation of new acid sites habe been ascribed to the charge imbalance of M1-O-M2 bonds, where M1 and M2 are metal atoms. Both Bronsted and Lewis acid sites contribute to the acidity of the oxides

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The surface acidity/basicity of binary oxides of Zr and La and the ternary oxides of Zr, La and Al are reported. The data have been correlated with their catalytic activity towards liquid phase reduction of cyclohexanone.

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In this work we present the results of our attempt to build a compact photothermal spectrometer capable of both manual and automated mode of operation.The salient features of the system include the ability to analyse thin film, powder and polymer samples. The tool has been in use to investigate thermal, optical and transport properties. Binary and ternary semiconducting thin films were analysed for their thermal diffusivities. The system could perform thickness measurements nondestructively. Ion implanted semiconductors are widely studied for the effect of radiation induced defects. We could perform nondestructive imaging of defects using our spectrometer.The results reported in his thesis on the above in addition to studies on In2S3 and transparent conducting oxide ZnO have been achieved with this spectrometer. Various polymer samples have been easily analysed for their thermal diffusivities. The technique provided ease of analysis not achieved with conventional techniques like TGA and DSC. Industrial application of the tool has also been proved by analyzing defects of welded joints and adhesion of paints. Indigenization of the expensive lock-in-amplifier and automation has been the significant achievement in the course of this dissertation. We are on our way to prove the noise rejection capabilities of our PC LIA.

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In the present work, we describe our efforts to develop device quality CuInSe2, films through low cost, simple and eco-friendly hybrid techniques. The most important point to be highlighted here is that the method fully avoids the use of poisonous gases such as H2Se/Se vapour. Instead, selenisation is achieved through solid state reaction between amorphous selenium and polycrystalline metal layers resulting in both binary and ternary selenides. Thin films of amorphous selenium (a-Se) used for this is deposited using Chemical Bath Deposition (CBD). CulnSe2 films are prepared through the selenisation process. Another PV material, indium selenide (In2Se3) thin films are also prepared using this process.