Surface effect ferromagnetism in pure and reduced strontium titanate

A room temperature ferromagnetic hysteresis is observed in single crystal strontium titanate substrates as purchased from several manufacturers. It was found that polishing all sides of the substrates removed this observed hysteresis, suggesting that the origin of the ferromagnetic behavior resides on the surface of the substrates. X-ray diffraction and energy dispersive x-ray spectra were measured however they were unable to detect any impurity phases. In similar semiconducting oxides it was previously suggested that ferromagnetism could originate in oxygen vacancies or from disorder within the single crystal. To this end substrates were annealed in both air and vacuum in a range of temperatures (600°C to 1100°G) to both create bulk oxygen vacancies and to heal surface damage. Annealing in vacuum was found to create a measureable number of oxygen vacancies however their creation could not be correlated to the ferromagnetic signal of the substrate. Annealing in air was found to effect the remnant moment of the substrate as well as the width of the x-ray diffraction peaks on the unpolished face, weakly suggesting a relation between surface based disorder and ferromagnetism. Argon ion bombardment was employed to create a layer of surface disorder in the polished crystal, however it was not found to induce ferromagnetism. It was found that acid etching was sufficient to remove the ferromagnetism from as purchased samples and similarly simulated handling with stainless steel tweezers was sufficient to re-create the ferromagnetism. It is suggested that the origin of this ferromagnetism in SrTi03 is surface contaminants (mainly iron).

Study on the properties of piezoelectric materials and manganese-based oxide perovskites /

Perovskite type piezoelectric and manganese oxide materials have gained a lot of attention in the field of device engineering. Lead zirconium titananium oxide (PbZri.iTiiOa or PZT) is a piezoelectric material widely used as sensors and actuators. Miniaturization of PZTbased devices will not only perfect many existing products, but also opens doors to new applications. Lanthanum manganese oxides Lai-iAiMnOa (A-divalent alkaline earth such as Sr, Ca or Ba) have been intensively studied for their colossal magnetoresistance (CMR) properties that make them applicable in memory cells, magnetic and pressure sensors. In this study, we fabricate PZT and LSMO(LCMO) heterostructures on SrTiOa substrates and investigate their temperature dependency of resistivity and magnetization as a function of the thickness of LSMO(LCMO) layer. The microstructure of the samples is analysed through TEM. In another set of samples, we study the effect of application of an electric field across the PZT layer that acts as an external pressure on the manganite layer. This verifies the correlation of lattice distortion with transport and magnetic properties of the CMR materials.