The infared optical properties of Sr2RuO4 and SmTiO3 including an object-oriented resistivity interface /

The perovskite crystal structure is host to many different materials from insulating to superconducting providing a diverse range of intrinsic character and complexity. A better fundamental description of these materials in terms of their electronic, optical and magnetic properties undoubtedly precedes an effective realization of their application potential. SmTiOa, a distorted perovskite has a strongly localized electronic structure and undergoes an antiferromagnetic transition at 50 K in its nominally stoichiometric form. Sr2Ru04 is a layered perovskite superconductor (ie. Tc % 1 K) bearing the same structure as the high-tem|>erature superconductor La2_xSrrCu04. Polarized reflectance measurements were carried out on both of these materials revealing several interesting features in the far-infrared range of the spectrum. In the case of SmTiOa, although insulating, evidence indicates the presence of a finite background optical conductivity. As the temperature is lowered through the ordering temperature a resonance feature appears to narrow and strengthen near 120 cm~^ A nearby phonon mode appears to also couple to this magnetic transition as revealed by a growing asymmetry in the optica] conductivity. Experiments on a doped sample with a greater itinerant character and lower Neel temperature = 40 K also indicate the presence of this strongly temperature dependent mode even at twice the ordering temperature. Although the mode appears to be sensitive to the magnetic transition it is unclear whether a magnon assignment is appropriate. At very least, evidence suggests an interesting interaction between magnetic and electronic excitations. Although Sr2Ru04 is highly anisotropic it is metallic in three-dimensions at low temperatures and reveals its coherent transport in an inter-plane Drude-like component to the highest temperatures measured (ie. 90 K). An extended Drude analysis is used to probe the frequency dependent scattering character revealing a peak in both the mass enhancement and scattering rate near 80 cm~* and 100 cm~* respectively. All of these experimental observations appear relatively consistent with a Fermi-liquid picture of charge transport. To supplement the optical measurements a resistivity station was set up with an event driven object oriented user interface. The program controls a Keithley Current Source, HP Nano-Voltmeter and Switching Unit as well as a LakeShore Temperature Controller in order to obtain a plot of the Resistivity as a function of temperature. The system allows for resistivity measurements ranging from 4 K to 290 K using an external probe or between 0.4 K to 295 K using a Helium - 3 Cryostat. Several materials of known resistivity have confirmed the system to be robust and capable of measuring metallic samples distinguishing features of several fiQ-cm.

On the anharmonic, multi-phonon, Debye-Waller contributions to the phonon-limited resistivity of metals : applications to Na and K

The anharmonic, multi-phonon (MP), and Oebye-Waller factor (OW) contributions to the phonon limited resistivity (;0) of metals derived by Shukla and Muller (1979) by the doubletime temperature dependent Green function method have been numerically evaluated for Na and K in the high temperature limit. The anharmonic contributions arise from the cubic and quartic shift of phonons (CS, QS), and phonon width (W) and the interference term (1). The QS, MP and OW contributions to I' are also derived by the matrix element method and the results are in agreement with those of Shukla and Muller (1979). In the high temperature limit, the contributions to;O from each of the above mentioned terms are of the type BT2 For numerical calculations suitable expressions are derived for the anharmonic contributions to ~ in terms of the third and fourth rank tensors obtained by the Ewald procedure. The numerical calculation of the contributions to;O from the OW, MP term and the QS have been done exactly and from the CS, Wand I terms only approximately in the partial and total Einstein approximations (PEA, TEA), using a first principle approach (Shukla and Taylor (1976)). The results obtained indicate that there is a strong pairwise cancellation between the: OW and MP terms, the QS and CS and the Wand I terms. The sum total of these contributions to;O for Na and K amounts to 4 to 11% and 2 to 7%, respectively, in the PEA while in the TEA they amount to 3 to 7% and 1 to 4%, respectively, in the temperature range.

The effects of moisture, cation concentration, temperature, density and composition of soils on their electrical resistivity

The effects. of moisture, cation concentration, dens ity , temper~ t ure and grai n si ze on the electrical resistivity of so il s are examined using laboratory prepared soils. An i nexpen si ve method for preparing soils of different compositions was developed by mixing various size fractions i n the laboratory. Moisture and cation c oncentration are related to soil resistivity by powe r functions, whereas soil resistiv ity and temperature, density, Yo gravel, sand , sil t, and clay are related by exponential functions . A total of 1066 cases (8528 data) from all the experiments were used in a step-wise multiple linear r egression to determine the effect of each variable on soil resistivity. Six variables out of the eight variables studied account for 92.57/. of the total variance in so il resistivity with a correlation coefficient of 0.96. The other two variables (silt and gravel) did not increase the · variance. Moisture content was found to be - the most important Yo clay. variable- affecting s oil res istivi ty followed by These two variables account for 90.81Yo of the total variance in soil resistivity with a correlation ~oefficient ·.of 0 . 95. Based on these results an equation to ' ~~ed{ ct soil r esist ivi ty using moisture and Yo clay is developed . To t est the predicted equation, resistivity measurements were made on natural soils both in s i tu a nd i n the laboratory. The data show that field and laboratory measurements are comparable. The predicted regression line c losely coinciqes with resistivity data from area A and area B soils ~clayey and silty~clayey sands). Resistivity data and the predicted regression line in the case of c layey soils (clays> 40%) do not coincide, especially a t l ess than 15% moisture. The regression equation overestimates the resistivity of so i l s from area C and underestimates for area D soils. Laboratory prepared high clay soils give similar trends. The deviations are probably caused by heterogeneous distribution of mo i sture and difference in the type o f cl ays present in these soils.

The Effects of Annealing URu2Si2 on the Resistivity and Meissner Effect

The enigmatic heavy fermion URu2Si2, which is the subject of this thesis, has attracted intensive theoretical and experimental research since 1984 when it was firstly reported by Schlabitz et al. at a conference [1]. The previous bulk property measurements clearly showed that one second order phase transition occurs at the Hidden Order temperature THO ≈ 17.5 K and another second order phase transition, the superconducting transition, occurs at Tc ≈ 1 K. Though twenty eight years have passed, the mechanisms behind these two phase transitions are still not clear to researchers. Perfect crystals do not exist. Different kinds of crystal defects can have considerable effects on the crystalline properties. Some of these defects can be eliminated, and hence the crystalline quality improved, by annealing. Previous publications showed that some bulk properties of URu2Si2 exhibited significant differences between as-grown samples and annealed samples. The present study shows that the annealing of URu2Si2 has some considerable effects on the resistivity and the DC magnetization. The effects of annealing on the resistivity are characterized by examining how the Residual Resistivity Ratio (RRR), the fitting parameters to an expression for the temperature dependence of the resistivity, the temperatures of the local maximum and local minimum of the resistivity at the Hidden Order phase transition and the Hidden Order Transition Width ∆THO change after annealing. The plots of one key fitting parameter, the onset temperature of the Hidden Order transition and ∆THO vs RRR are compared with those of Matsuda et al. [2]. Different media used to mount samples have some impact on how effectively the samples are cooled because the media have different thermal conductivity. The DC magnetization around the superconducting transition is presented for one unannealed sample under fields of 25 Oe and 50 Oe and one annealed sample under fields of 0 Oe and 25 Oe. The DC field dependent magnetization of the annealed Sample1-1 shows a typical field dependence of a Type-II superconductor. The lower critical field Hc1 is relatively high, which may be due to flux pinning by the crystal defects.

Design of Resistivity Instrumentation for a He3 Cryostat and its Application to the Charge Density Wave Superconductor CuxTiSe2

Fermi patches in quasi-two dimensional charge density waves (CDW) have not described the connection to superconductivity (SC) according to theory adequately at this point in time. The connection between CDW and SC in the quasi-two dimensional material CuxTiSe2 is an interesting one which might reveal mechanisms in unconventional superconductors. A previous Brock graduate student grew crystals of CuxTiSe2. The precise doping of the samples was not known. In order to determine the doping parameter x in CuxTiSe2, a sensitive resistivity measurement system was necessary. A new resistivity measurement system was designed and implemented utilizing an Infrared Labs HDL-10 He3 cryostat. By comparing with data from the literature, doping of two samples was investigated using the new measurement system and a Quantum Design Magnetic Property Measurement System (MPMS). Methods for determining the doping revealed that the old resistivity system would not be able to determine the CDW transition temperature of highly doped samples or doping for elongated samples due to electronic noise. Doping in one sample was found to be between x=0.06 and x=0.065. Values of doping in the second sample had a discrepancy but could be explained by incorrect sample orientation.