2 resultados para SEMICONDUCTING SILICIDES

em Brock University, Canada


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A room temperature ferromagnetic hysteresis is observed in single crystal strontium titanate substrates as purchased from several manufacturers. It was found that polishing all sides of the substrates removed this observed hysteresis, suggesting that the origin of the ferromagnetic behavior resides on the surface of the substrates. X-ray diffraction and energy dispersive x-ray spectra were measured however they were unable to detect any impurity phases. In similar semiconducting oxides it was previously suggested that ferromagnetism could originate in oxygen vacancies or from disorder within the single crystal. To this end substrates were annealed in both air and vacuum in a range of temperatures (600°C to 1100°G) to both create bulk oxygen vacancies and to heal surface damage. Annealing in vacuum was found to create a measureable number of oxygen vacancies however their creation could not be correlated to the ferromagnetic signal of the substrate. Annealing in air was found to effect the remnant moment of the substrate as well as the width of the x-ray diffraction peaks on the unpolished face, weakly suggesting a relation between surface based disorder and ferromagnetism. Argon ion bombardment was employed to create a layer of surface disorder in the polished crystal, however it was not found to induce ferromagnetism. It was found that acid etching was sufficient to remove the ferromagnetism from as purchased samples and similarly simulated handling with stainless steel tweezers was sufficient to re-create the ferromagnetism. It is suggested that the origin of this ferromagnetism in SrTi03 is surface contaminants (mainly iron).

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We report the results of crystal structure, magnetization and resistivity measurements of Bi doped LaVO3. X-ray diffraction (XRD) shows that if doping Bi in the La site is less than ten percent, the crystal structure of La1-xBixVO3 remains unchanged and its symmetry is orthorhombic. However, for higher Bi doping (>10%) composite compounds are found where the XRD patterns are characterized by two phases: LaVO3+V2O3. Energy-dispersive analysis of the x-ray spectroscopy (EDAX) results are used to find a proper atomic percentage of all samples. The temperature dependence of the mass magnetization of pure and single phase doped samples have transition temperatures from paramagnetic to antiferromagnetic region at TN=140 K. This measurement for bi-phasic samples indicates two transition temperatures, at TN=140 K (LaVO3) and TN=170 K (V2O3). The temperature dependence of resistivity reveals semiconducting behavior for all samples. Activation energy values for pure and doped samples are extracted by fitting resistivity versus temperature data in the framework of thermal activation process.