La1-xSrxMnO3 as a candidate for a room temperature pressure sensor /

Perovskite manganite compounds, Lai-xDxMnOs (D-divalent alkaline earth Ca, Sr or Ba), whose electrical and magnetic properties were first investigated nearly a half century ago, have attracted a great deal of attention due to their rich phase diagram. From the point of view of designing a future application, the strong pressure dependence of the resistivity and the accompanying effects in thin films have potential for application in pressure sensing and electronic devices. In this study we report our experimental investigations of pressure dependence of the resistivity of Lao.siSvo^iQMnOs and Lai-xSvxMnOs (LSMO) epitaxial films with x= 0.15, 0.20, 0.25, 0.30, 0.35, on SrTiOs substrates.

Far infared reflectance along the C-axis of the charge stripe superconductor La1.875Ba0.125CuO4.

Reflectance measurements along the c-axis of La1.875 Bao.125CU04 at temperatures above(6K) and below(O.5K) the bulk superconducting transition temperature(3K) were performed using a Bruker rapid scan spectrometer and a Martin-Puplett polarizing spectrometer. It was found that when polarized light reflected from a sample the Bruker rapid scan spectrometer has a low frequency cutoff of lOcm-1 while the Martin-Puplett polarizing spectrometer has a low frequency cutoff of 6cm-1 A superconducting pla ma edge was absent in all measurements taken. It was concluded that if a superconducting plasma edge exists in La1.875Bao.125CU04 it is below 6cm-1.

Crystallinity, Magnetic and Electrical Properties of Bi doped LaVO3

We report the results of crystal structure, magnetization and resistivity measurements of Bi doped LaVO3. X-ray diffraction (XRD) shows that if doping Bi in the La site is less than ten percent, the crystal structure of La1-xBixVO3 remains unchanged and its symmetry is orthorhombic. However, for higher Bi doping (>10%) composite compounds are found where the XRD patterns are characterized by two phases: LaVO3+V2O3. Energy-dispersive analysis of the x-ray spectroscopy (EDAX) results are used to find a proper atomic percentage of all samples. The temperature dependence of the mass magnetization of pure and single phase doped samples have transition temperatures from paramagnetic to antiferromagnetic region at TN=140 K. This measurement for bi-phasic samples indicates two transition temperatures, at TN=140 K (LaVO3) and TN=170 K (V2O3). The temperature dependence of resistivity reveals semiconducting behavior for all samples. Activation energy values for pure and doped samples are extracted by fitting resistivity versus temperature data in the framework of thermal activation process.