Pintaemittoivan VCSEL-diodin käyttö aallonpituusmodulaatiospektroskopiaan perustuvissa hapen konsentraation mittauksissa

Teollisuuden sovelluksissa kaasun mittauslaitteilta vaaditaan suurta luotettavuutta sekä niiden huollontarve tulee olla minimaalista. Jatkuva-aikaisissa mittauksissa nämä vaatimuksetlunastaa viritettävän diodilaser-spektroskopian käyttö. Pienen kokonsa, vähäisten tehohäviöiden ja hyvien säätömahdollisuuksien ansiosta, VCSEL:t (vertical cavity surface emitting laser) ovat sopivia vaihtoehtoja valonlähteeksi mitattaessapäästökaasuja, tässä tapauksessa happea. Työssä rakennettiin mittauslaitteisto, jota käytettiin hapen konsentraation määrittämiseen. Mittauslaitteistolla suoritettiin hapen pitoisuusmittauksia ja saatuja tuloksia verrattiin teoreettisen mallin antamien tulosten kesken. Mittaukset perustuvat toisen harmonisen signaalin havainnointiin. Lisäksi tarkasteltiin paineen ja lämpötilanvaikutusta mittaustuloksiin.

Time-Resolved Photoluminescence in Antimonide and Dilute Nitride Quantum Well Structures

This Master's thesis is devoted to semiconductor samples study using time-resolved photoluminescence. This method allows investigating recombination in semiconductor samples in order to develop quality of optoelectronic device. An additional goal was the method accommodation for low-energy-gap materials. The first chapter gives a brief intercourse into the basis of semiconductor physics. The key features of the investigated structures are noted. The usage area of the results covers saturable semiconductor absorber mirrors, disk lasers and vertical-external-cavity surface-emittinglasers. The experiment set-up is described in the second chapter. It is based on up-conversion procedure using a nonlinear crystal and involving the photoluminescent emission and the gate pulses. The limitation of the method was estimated. The first series of studied samples were grown at various temperatures and they suffered rapid thermal annealing. Further, a latticematched and metamorphically grown samples were compared. Time-resolved photoluminescence method was adapted for wavelengths up to 1.5 µm. The results allowed to specify the optimal substrate temperature for MBE process. It was found that the lattice-matched sample and the metamorphically grown sample had similar characteristics.

Unusual bismuth-containing surface layers of III-V compound semiconductors

The understanding and engineering of bismuth (Bi) containing semiconductor surfaces are signi cant in the development of novel semiconductor materials for electronic and optoelectronic devices such as high-e ciency solar cells, lasers and light emitting diodes. For example, a Bi surface layer can be used as a surfactant which oats on a III-V compound-semiconductor surface during the epitaxial growth of IIIV lms. This Bi surfactant layer improves the lm-growth conditions if compared to the growth without the Bi layer. Therefore, detailed knowledge of the properties of the Bi/III-V surfaces is needed. In this thesis, well-de ned surface layers containing Bi have been produced on various III-V semiconductor substrates. The properties of these Bi-induced surfaces have been measured by low-energy electron di raction (LEED), scanning-tunneling microscopy and spectroscopy (STM), and synchrotron-radiation photoelectron spectroscopy. The experimental results have been compared with theoretically calculated results to resolve the atomic structures of the studied surfaces. The main ndings of this research concern the determination of the properties of an unusual Bi-containing (2×1) surface structure, the discovery and characterization of a uniform pattern of Bi nanolines, and the optimization of the preparation conditions for this Bi-nanoline pattern.