Ambassadör R. R. Seppälä 20.1.1962 Washington

Kirje

Senator J. William Fulbright 4.12.1974 Förenta Staternas Senat Washington D.C.

Kirje

Puheenjohtaja Emil Skog 19/6 1963

Kirje

Översten ia Alpo K. Marttinen 8.5.1973 Washington D.C.

Kirje

Tasavallan Presidentti Urho Kekkosen virallinen vierailu Yhdysvaltoihin 23.-27.7.1970 (Tasavallan Presidentin saapumispuhe Washingtonissa 23.7.1970 = speech by the President of Finland, Urho Kekkonen upon his arrival in Washington, D.C. on July 23, 1970)

Puhe

Ordförande Emil Skog 19.6.1963 Härstädes

Kirje

Räätäli Emil Peltosen elämä

Referat: Skräddaren Emil Peltonens liv

Kelvin Probe Force Microscopy (KPFM) characterization of lanthanum lutetium oxide high-k dielectric thin films

Lanthanum lutetium oxide (LaLuO3) thin films were investigated considering their perspective application for industrial microelectronics. Scanning probe microscopy (SPM) techniques permitted to visualize the surface topography and study the electric properties. This work compared both the material properties (charge behavior for samples of 6 nm and 25 nm width) and the applied SPM modes. Particularly, Kelvin probe force microscopy (KPFM) was applied to characterize local potential difference with high lateral resolution. Measurements showed the difference in morphology, chargeability and charge dissipation time for both samples. The polarity effect was detected for this material for the first time. Lateral spreading of the charged spots indicate the diffusive mechanism to be predominant in charge dissipation. This allowed to estimate the diffusion coefficient and mobility. Using simple electrostatic model it was found that charge is partly leaking into the interface oxide layer.

Arkistoluettelo 100: Emil Kauppi

Luettelo Kansalliskirjastossa olevan Emil Kaupin arkiston sisällöstä