53 resultados para Atomic Displacement Parameters

em Doria (National Library of Finland DSpace Services) - National Library of Finland, Finland


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Selostus: Ravihevosten jalostettavia ominaisuuksia kuvaavien kilpailumittojen perinnölliset tunnusluvut

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Selostus: Sian kasvuominaisuuksien perinnölliset tunnusluvut arvioituna kolmannen asteen polynomifunktion avulla

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Selostus: Ayrshire-ensikoiden koelypsykohtaisen maidontuotannon perinnölliset tunnusluvut laktaation eri vaiheissa

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Selostus: Ryhmäkoon ja varhaisen käsittelyn vaikutus tarhattujen sinikettujen hyvinvointiin

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Selostus: Ryhmäkoon ja käytössä olevan tilan vaikutus tarhattujen hopeakettupentujen hyvinvointiin

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Selostus: Ravikilpailumenestysmittojen periytymisasteet ja toistumiskertoimet kilpailukohtaisten tulosten perusteella

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The warp of corrugated board is the most prevalent quality problem incorrugated board industry. Nowadays corrugators provide high quality board but there often occurs a warp problem within the production of some board grades. One of the main reasons for that are the humidity and the temperature levels of the raw materials. The goal of the research is to find out howthe adjusted corrugator recipe parameters required for appropriate running of the corrugated board are repeatable for the considered board grades, how the temperature and humidity imbalances of the raw material papers influence on the warpformation of the finished board. Furthermore, the solutions for preventing warpof corrugated board are presented in the thesis.

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In this work GaN and AlGaN layers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. The research was carried out at Micro and Nanoscience Laboratory of Helsinki University of Technology. The objective of this thesis is the study of MOCVD technique for the growth of GaN and AlGaN films and optimization of growth parameters in purpose to improve crystal quality of the films. The widely used two-step and the new multistep methods have been used for GaN, AlGaN MOCVD growth on c-plane sapphire. Properties of the GaN and AlGaN layers were studied using in-situ reflectance monitoring during MOCVD growth, atomic force microscopy and x-ray diffraction. Compared to the two step method, the multistep method has produced even better qualities of the GaN and AlGaN layers and significant reduction of threading dislocation density.

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Normally either the Güntelberg or Davies equation is used to predict activity coefficients of electrolytes in dilute solutions when no better equation is available. The validity of these equations and, additionally, of the parameter-free equations used in the Bates-Guggenheim convention and in the Pitzerformalism for activity coefficients were tested with experimentally determined activity coefficients of HCl, HBr, HI, LiCl, NaCl, KCl, RbCl, CsCl, NH4Cl, LiBr,NaBr and KBr in aqueous solutions at 298.15 K. The experimental activity coefficients of these electrolytes can be usually reproduced within experimental errorby means of a two-parameter equation of the Hückel type. The best Hückel equations were also determined for all electrolytes considered. The data used in the calculations of this study cover almost all reliable galvanic cell results available in the literature for the electrolytes considered. The results of the calculations reveal that the parameter-free activity coefficient equations can only beused for very dilute electrolyte solutions in thermodynamic studies.