77 resultados para Field instrumentation


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Measurement is a tool for researching. Therefore, it is important that the measuring process is carried out correctly, without distorting the signal or the measured event. Researches of thermoelectric phenomena have been focused more on transverse thermoelectric phenomena during recent decades. Transverse Seebeck effect enables to produce thinner and faster heat flux sensor than before. Studies about transverse Seebeck effect have so far focused on materials, so in this Master’s Thesis instrumentation of transverse Seebeck effect based heat flux sensor is studied, This Master’s Thesis examines an equivalent circuit of transverse Seebeck effect heat flux sensors, their connectivity to electronics and choosing and design a right type amplifier. The research is carried out with a case study which is Gradient Heat Flux Sensors and an electrical motor. In this work, a general equivalent circuit was presented for the transverse Seebeck effect-based heat flux sensor. An amplifier was designed for the sensor of the case study, and the solution was produced for the measurement of the local heat flux of the electric motor to improve the electromagnetic compatibility.

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In this thesis mainly long quasi-periodic solar oscillations in various solar atmospheric structures are discussed, based on data obtained at several wavelengths, focussing, however, mainly on radio frequencies. Sunspot (Articles II and III) and quiet Sun area (QSA) (Article I) oscillations are investigated along with quasi-periodic pulsations (QPP) in a flaring event with wide-range radio spectra (Article IV). Various oscillation periods are detected; 3–15, 35–70 and 90 minutes (QSA), 10-60 and 80-130 minutes (in sunspots at various radio frequencies), 3-5, 10-23, 220-240, 340 and 470 minutes (in sunspots at photosphere) and 8-12 and 15-17 seconds (in a solar flare at radio frequencies). Some of the oscillation periods are detected for the first time, while some of them have been confirmed earlier by other research groups. Solar oscillations can provide more information on the nature of various solar structures. This thesis presents the physical mechanisms of some solar structure oscillations. Two different theoretical approaches are chosen; magnetohydrodynamics (MHD) and the shallow sunspot model. These two theories can explain a wide range of solar oscillations from a few seconds up to some hours. Various wave modes in loop structures cause solar oscillations (<45 minutes) both in sunspots and quiet Sun areas. Periods lasting more than 45 minutes in the sunspots (and a fraction of the shorter periods) are related to sunspot oscillations as a whole. Sometimes similar oscillation periods are detected both in sunspot area variations and respectively in magnetic field strength changes. This result supports a concept that these oscillations are related to sunspot oscillations as a whole. In addition, a theory behind QPPs at radio frequencies in solar flares is presented. The thesis also covers solar instrumentation and data sources. Additionally, the data processing methods are presented. As the majority of the investigations in this thesis focus on radio frequencies, also the most typical radio emission mechanisms are presented. The main structures of the Sun, which are related to solar oscillations, are also presented. Two separate projects are included in this thesis. Solar cyclicity is studied using the extensively large solar radio map archieve from Metsähovi Radio Observatory (MRO) at 37 GHz, between 1978 and 2011 (Article V) covering two full solar cycles. Also, some new solar instrumentation (Article VI) was developed during this thesis.

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Large amplitude bus bar aeolian vibration may lead to post insulator damage. Different damping applications are used to decrease the risk of large amplitude aeolian vibration. In this paper the post insulator load caused by the bus bar aeolian vibration and the effect of damping methods are evaluated. The effects of three types of bus bar connectors and three types of primary structures are studied. Two actual damping devices, damping cable and their combinations are studied. The post insulator loads are studied with strain gage based custom made force sensors installed on the both ends of the post insulator and with the displacement sensor installed on the midpoint of the bus bar. The post insulator loads are calculated from the strain values and the damping properties are determined from the displacement history. The bus bar is deflected with a hanging weight. The weight is released and the bus bar is left to free damped vibration. Both actual bus bar vibration dampers RIBE and SBI were very effective against the aeolian vibration. Combining vibration damper with damping cable will increase the damping ratio but it may be unnecessary considering the extra effort. Bus bar connector type or primary structure have no effect on the vertical load. The bending moment at the post insulator with double sided bus bar connector is significantly higher than at the post insulator with single sided bus bar connector. No reliable conclusions about bus bar connector type effect can be done, but the roller bearing type or central bearing type connector may reduce the bending moment. The RHS steel frame as primary structure may increase the bending moment peak values since it is the least rigid primary structure type and it may start to vibrate as a response to the awakening force of the vibrating bus bar.

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This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

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Väisälän palkinnon 2012 saaja.

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Choice of industrial development options and the relevant allocation of the research funds become more and more difficult because of the increasing R&D costs and pressure for shorter development period. Forecast of the research progress is based on the analysis of the publications activity in the field of interest as well as on the dynamics of its change. Moreover, allocation of funds is hindered by exponential growth in the number of publications and patents. Thematic clusters become more and more difficult to identify, and their evolution hard to follow. The existing approaches of research field structuring and identification of its development are very limited. They do not identify the thematic clusters with adequate precision while the identified trends are often ambiguous. Therefore, there is a clear need to develop methods and tools, which are able to identify developing fields of research. The main objective of this Thesis is to develop tools and methods helping in the identification of the promising research topics in the field of separation processes. Two structuring methods as well as three approaches for identification of the development trends have been proposed. The proposed methods have been applied to the analysis of the research on distillation and filtration. The results show that the developed methods are universal and could be used to study of the various fields of research. The identified thematic clusters and the forecasted trends of their development have been confirmed in almost all tested cases. It proves the universality of the proposed methods. The results allow for identification of the fast-growing scientific fields as well as the topics characterized by stagnant or diminishing research activity.

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Global illumination algorithms are at the center of realistic image synthesis and account for non-trivial light transport and occlusion within scenes, such as indirect illumination, ambient occlusion, and environment lighting. Their computationally most difficult part is determining light source visibility at each visible scene point. Height fields, on the other hand, constitute an important special case of geometry and are mainly used to describe certain types of objects such as terrains and to map detailed geometry onto object surfaces. The geometry of an entire scene can also be approximated by treating the distance values of its camera projection as a screen-space height field. In order to shadow height fields from environment lights a horizon map is usually used to occlude incident light. We reduce the per-receiver time complexity of generating the horizon map on N N height fields from O(N) of the previous work to O(1) by using an algorithm that incrementally traverses the height field and reuses the information already gathered along the path of traversal. We also propose an accurate method to integrate the incident light within the limits given by the horizon map. Indirect illumination in height fields requires information about which other points are visible to each height field point. We present an algorithm to determine this intervisibility in a time complexity that matches the space complexity of the produced visibility information, which is in contrast to previous methods which scale in the height field size. As a result the amount of computation is reduced by two orders of magnitude in common use cases. Screen-space ambient obscurance methods approximate ambient obscurance from the depth bu er geometry and have been widely adopted by contemporary real-time applications. They work by sampling the screen-space geometry around each receiver point but have been previously limited to near- field effects because sampling a large radius quickly exceeds the render time budget. We present an algorithm that reduces the quadratic per-pixel complexity of previous methods to a linear complexity by line sweeping over the depth bu er and maintaining an internal representation of the processed geometry from which occluders can be efficiently queried. Another algorithm is presented to determine ambient obscurance from the entire depth bu er at each screen pixel. The algorithm scans the depth bu er in a quick pre-pass and locates important features in it, which are then used to evaluate the ambient obscurance integral accurately. We also propose an evaluation of the integral such that results within a few percent of the ray traced screen-space reference are obtained at real-time render times.

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Yritysten tavassa suorittaa yritysostoja on havaittu selkeä muutos. Useassa yritysostoja koskevassa tutkimuksessa on havaittu, että yrityksillä on tapana suorittaa useita peräkkäisiä tai jopa rinnakkaisia yritysostoja, jotka tukevat yrityksen pitkän aikavälin kasvustrategiaa. Tätä ilmiötä kutsutaan yritysosto-ohjelmaksi. Yritysosto-ohjelma on yksittäisten yritysostojen sarja, jonka avulla ohjelmaa toteuttava yritys pyrkii saavuttamaan tietyn liiketoimintapäämäärän tai halutun markkina-aseman. Yritysosto-ohjelmia koskevissa tutkimuksissa on viime aikoina siirrytty tutkimaan syitä, jotka aiheuttavat eroja yritysten toteuttamien yritysostojen suorituskyvyssä. Yhtenä potentiaalisena selityksenä tälle ilmiölle on nostettu erot yritysten yritysosto-ohjelmakyvykkyyksissä. Yritysostoohjelmakyvykkyyksiksi luetaan kaikki yrityksen tiedot, taidot, järjestelmät, menettelytavat ja muu yrityksen osaaminen, jotka tehostavat yrityksen osto-ohjelmien toteuttamista. Tutkielman tarkoituksena on selvittää, mitkä ovat olennaisimmat yritysosto-ohjelmakyvykkyydet ja miten näitä kyvykkyyksiä kehitetään. Tutkimusongelman ratkaisemiseksi aiheen teoreettisen tarkastelun lisäksi toteutettiin field-tutkimus viidessä lukuisia yritysostoja toteuttaneessa yrityksessä. Teoreettisessa tarkastelussa pyrittiin ensin kuvaamaan osto-ohjelmailmiötä ja aikaisemmissa tutkimuksissa havaittuja osto-ohjelmakyvykkyyksiä. Kyvykkyyksien kehittymisen teoreettisen tarkastelun pohjana hyödynnettiin aikaisempaa kirjallisuutta dynaamisista kyvykkyyksistä ja niiden kehityksestä sekä kirjallisuutta ja aikaisempia tutkimuksia organisatorisesta oppimisesta ja sen vaikutuksesta dynaamisten kyvykkyyksien kehitykseen. Sekä tutkimuksessa esitetty teoria että empiirinen aineisto osoittivat, että on olemassa yritysostoohjelmakyvykkyyksiä, jotka osaltaan selittävät yritysostojen suorituskyvyn eroja eri yritysostajien välillä. Olennaisimpina osto-ohjelmakyvykkyyksinä tutkielmassa nousivat esiin: (1) kyky luoda toimiva yritysostostrategia ja valita menestyvä markkina-alue, (2) kyky valita yritysostoohjelmastrategiaa tukevia ja yritykseen sopivia ostokohteita, (3) kyky strukturoida yritysostoprosessi, (4) kyky hallita integraatioprosesseja, sekä (5) kyky soveltaa yritysostokokemuksia. Haastateltavissa yrityksissä oli kyvykkyyksien kehittämisessä selkeästi havaittavissa yksisilmukkainen ja kaksisilmukkainen oppiminen, joka tuki Vossin (2008) kehittämää viitekehystä osto-ohjelmakyvykkyyksien kehittymissyklistä. Teoreettisten ja empiiristen havaintojen perusteella tutkielmassa hahmoteltiin organisatorisen oppimisen ja kyvykkyyksien kehittymisen suhdetta visualisoiva yritysosto-ohjelmakyvykkyyksien kehittämisen viitekehys.