Moment Operators of Observables in Quantum Mechanics, with Applications to Quantization and Homodyne Detection

The questions studied in this thesis are centered around the moment operators of a quantum observable, the latter being represented by a normalized positive operator measure. The moment operators of an observable are physically relevant, in the sense that these operators give, as averages, the moments of the outcome statistics for the measurement of the observable. The main questions under consideration in this work arise from the fact that, unlike a projection valued observable of the von Neumann formulation, a general positive operator measure cannot be characterized by its first moment operator. The possibility of characterizing certain observables by also involving higher moment operators is investigated and utilized in three different cases: a characterization of projection valued measures among all the observables is given, a quantization scheme for unbounded classical variables using translation covariant phase space operator measures is presented, and, finally, a mathematically rigorous description is obtained for the measurements of rotated quadratures and phase space observables via the high amplitude limit in the balanced homodyne and eight-port homodyne detectors, respectively. In addition, the structure of the covariant phase space operator measures, which is essential for the above quantization, is analyzed in detail in the context of a (not necessarily unimodular) locally compact group as the phase space.

Structural and optical properties of InAs/GaAs quantum structures

The goal of the thesis was to study fundamental structural and optical properties of InAs islands and In(Ga)As quantum rings. The research was carried out at the Department of Micro and Nanosciences of Helsinki University of Technology. A good surface quality can be essential for the potential applications in optoelectronic devices. For such device applications it is usually necessary to control size, density and arrangement of the islands. In order to study the dependence of the structural properties of the islands and the quantum rings on growth conditions, atomic force microscope was used. Obtained results reveal that the size and the density of the In(Ga)As quantum rings strongly depend on the growth temperature, the annealing time and the thickness of the partial capping layer. From obtained results it is possible to conclude that to get round shape islands and high density one has to use growth temperature of 500 ̊C. In the case of formation of In(Ga)As quantum rings the effect of mobility anisotropy is observed that so the shape of the rings is not symmetric. To exclude this effect it is preferable to use a higher annealing temperature of 570 ̊C. Optical properties were characterized by PL spectroscopy. PL emission was observed from buried InAs quantum dots and In(Ga)As quantum rings grown with different annealing time and temperature and covered with a various thickness of the partial capping layer.

Imprecise measurements in quantum mechanics

In this thesis the structure and properties of imprecise quantum measurements are investigated. The starting point for this investigation is the representation of a quantum observable as a normalized positive operator measure. A general framework to describe measurement inaccuracy is presented. Requirements for accurate measurements are discussed, and the relation of inaccuracy to some optimality criteria is studied. A characterization of covariant observables is given in the case when they are imprecise versions of a sharp observable. Also the properties of such observables are studied. The case of position and momentum observables is studied. All position and momentum observables are characterized, and the joint positionmomentum measurements are discussed.

Electroluminescence of silicon- and some metal oxides

In the present work electroluminescence in Si-SiO2 structures has been investigated. Electroluminescence has been recorded in the range of 250-900 nm in a system of electrolyte-insulator-semiconductor at the room temperature. The heating process of electrons in SiO2 was studied and possibility of separation it into two phases has been shown. The nature of luminescence centers and the model of its formation were proposed. This paper also includes consideration of oxide layer formation. Charge transfer mechanisms have been attended as well. The nature of electroluminescence is understood in detail. As a matter of fact, electron traps in silicon are the centers of luminescence. Electroluminescence occurs when electrons move from one trap to another. Thus the radiation of light quantum occurs. These traps appear as a result of the oxide growth. At the same time the bonds deformation of silicon atoms with SiOH groups is not excludes. As a result, dangling bonds are appeared, which are the trapping centers or the centers of luminescence.

Quantum dynamics of the parabolic model

Kvanttimekaniikan teoriassa suljettuja, ympäristöstään eristettyjä systeemejä koskevat tulokset ovat hyvin tunnettuja. Eräs tärkeä erityispiirre tällaisille systeemeille on, että niiden aikakehitys on unitaarista. Oletus siitä, että systeemi on suljettu, on osaltaan tietysti vain yksinkertaistus. Käytännössä kaikki kvanttimekaaniset systeemit vuorovaikuttavat ympäristönsä kanssa ja tästä johtuen niiden dynamiikka monimutkaistuu oleellisesti. Kuitenkin tietyissä tapauksissa systeemin aikakehitys voidaan ratkaista, ainakin approksimatiivisesti. Tärkeimpinä esimerkkeinä on ympäristön joko nopea tai erittäin hidas muutos kvanttisysteemin ominaiseen aikaskaalaan verrattuna. Näistä erityisesti jälkimmäinen on käyttökelpoinen oletus monissa fysikaalisissa tilanteissa. Tällöin voidaan suorittaa niin sanottu adiabaattinen approksimaatio. Sen mukaan systeemi, joka on aikakehityksen generoivan Hamiltonin operaattorin ominaistilassa, pysyy vastaavassa ominaistilassa ympäristön muuttuessa äärettömän hitaasti, mikäli systeemin eri energiatasot eivät leikkaa toisiaan. Todellisissa tilanteissa muutos ei tietenkään voi olla äärettömän hidasta ja myös energiatasojen leikkaukset ovat mahdollisia, jolloin tapahtuu transitio eri ominaistilojen välillä. Energiatasojen leikkauksilla on oleellisia vaikutuksia erittäin monissa fysikaalisissa prosesseissa ja niitä kuvaamaan on luotu monia malleja kvanttimekaniikan alkuajoista lähtien aina tähän päivään saakka. Nykyinen teknologinen kehitys on avannut uudenlaisen mahdollisuuden ilmiön kokeelliseen varmentamiseen ja hyödyntämiseen. Tämän vuoksi kyseisten mallien dynamiikan ja erityisesti energiatasojen useiden peräkkäisten leikkausten aiheuttamien koherenssi-ilmiöiden selvittäminen on tärkeää. Tässä työssä käsitellään kvanttimekaanisia kaksitasosysteemejä, joissa esiintyy energiatasojen leikkauksia sekä niiden pitkän aikavälin dynamiikkaa. Tutkielmassa perehdytään tarkemmin kahteen tiettyyn malliin. Näistä ensimmäinen, Landau-Zener -malli, on tunnetuin ja sovelluksissa käytetyin malli. Kuitenkin erityisen mielenkiinnon kohteena on niin kutsuttu parabolinen malli, jolle johdetaan eri approksimaatioita käyttäen asymptoottiset transitiotodennäköisyydet eri tilojen välille. Näitä verrataan numeerisiin tuloksiin.