Microcracks and Vortices in Superconducting Thin Films

In this work, superconducting YBa₂ Cu₃O_6+x (YBCO) thin films have been studied with the experimental focus on the anisotropy of BaZrO₃ (BZO) doped YBCOthin films and the theoretical focus on modelling flux pinning by numerically solving Ginzburg- Landau equations. Also, the structural properties of undoped YBCO thin films grown on NdGaO₃ (NGO) and MgO substrates were investigated. The thin film samples were made by pulsed laser ablation on single crystal substrates. The structural properties of the thin films were characterized by X-ray diffraction and atomic force microscope measurements. The superconducting properties were investigated with a magnetometer and also with transport measurements in pulsed magnetic field up to 30 T. Flux pinning was modelled by restricting the value of the order parameter inside the columnar pinning sites and then solving the Ginzburg-Landau equations numerically with the restrictions in place. The computations were done with a parallel code on a supercomputer. The YBCO thin films were seen to develop microcracks when grown on NGO or MgO substrates. The microcrack formation was connected to the structure of the YBCO thin films in both cases. Additionally, the microcracks can be avoided by careful optimization of the deposition parameters and the film thickness. The BZO doping of the YBCO thin films was seen to decrease the effective electron mass anisotropy, which was seen by fitting the Blatter scaling to the angle dependence of the upper critical field. The Ginzburg-Landau simulations were able to reproduce the measured magnetic field dependence of the critical current density for BZO doped and undoped YBCO. The simulations showed that in addition to the large density also the large size of the BZO nanorods is a key factor behind the change in the power law behaviour between BZO doped and undoped YBCO. Additionally, the Ginzburg-Landau equations were solved for type I thin films where giant vortices were seen to appear depending on the film thickness. The simulations predicted that singly quantized vortices are stable in type I films up to quite large thicknesses and that the size of the vortices increases with decreasing film thickness, in a way that is similar to the behaviour of the interaction length of Pearl vortices.

Reducing contact resistance in graphene devices

In this thesis, the contact resistance of graphene devices was investigated because high contact resistance is detrimental to the performance of graphene field-effect transistors (GFET). Method for increasing so-called edge-contact area was applied in device fabrication process, as few nanometers thick Ni layer was used as a catalytic etchant during the annealing process. Finally, Ni was also used as a metal for contact. GFETs were fabricated using electron beam lithography using graphene fabricated by chemical vapor deposition (CVD). Critical part of the fabrication process was to preserve the high quality of the graphene channel while etching the graphene at contact areas with Ni during the annealing. This was achieved by optimizing the combination of temperature and gas flows. The structural properties of graphene were studied using scanning electron microscopy, scanning confocal μ-Raman spectroscopy and optical microscopy. Evaluation of electric transport properties including contact resistance was carried out by transmission line method and four-probe method. The lowest contact resistance found was about at 350 Ωμm. In addition, different methods to transfer CVD graphene synthesized on copper were studied. Typical method using PMMA as a supporting layer leaves some residues after its removal, thus effecting on the performance of a graphene devices. In a metal assisted transfer method, metal is used as an interfacial layer between PMMA and graphene. This allows more effective removal of PMMA. However, Raman spectra of graphene transferred by metal assisted method showed somewhat lower quality than the PMMA assisted method

Magnetic properties of defective graphene

In this thesis, the influence of the functionalization of graphene and graphite on their magnetic properties was investigated. The functionalization was performed by covalent attaching of a phenyl groups with three different radicals (4-bromoaniline, 4-chloroaniline and 4-nitroaniline). Magnetic properties were measured by SQUID magnetometer. Both pristine graphite and graphene showed strong diamagnetic behavior. For good quality graphite, diamagnetism was found to be temperature-dependent. All samples demonstrated noticeable paramagnetic contribution below 50 K. According to fitting experimental results with Brillouin function and Curie law, it was shown that paramagnetism is provided by small clusters of spins (superparamagnetic behavior). Moreover, the clusters size and spin concentrations were calculated. For the samples functionalized with nitroaniline the antiferromagnetic transition around 120 K was observed. To explain this behavior, a simple model was proposed. Additional analysis of the graphene quality, structure and composition of the samples was carried out by HRTEM, EDS mapping, Raman spectroscopy and X-ray diffraction techniques.