Spectroscopic Studies of III-V Semiconductor Materials for Improved Devices

Defects in semiconductor crystals and at their interfaces usually impair the properties and the performance of devices. These defects include, for example, vacancies (i.e., missing crystal atoms), interstitials (i.e., extra atoms between the host crystal sites), and impurities such as oxygen atoms. The defects can decrease (i) the rate of the radiative electron transition from the conduction band to the valence band, (ii) the amount of charge carriers, and (iii) the mobility of the electrons in the conduction band. It is a common situation that the presence of crystal defects can be readily concluded as a decrease in the luminescence intensity or in the current flow for example. However, the identification of the harmful defects is not straightforward at all because it is challenging to characterize local defects with atomic resolution and identification. Such atomic-scale knowledge is however essential to find methods for reducing the amount of defects in energy-efficient semiconductor devices. The defects formed in thin interface layers of semiconductors are particularly difficult to characterize due to their buried and amorphous structures. Characterization methods which are sensitive to defects often require well-defined samples with long range order. Photoelectron spectroscopy (PES) combined with photoluminescence (PL) or electrical measurements is a potential approach to elucidate the structure and defects of the interface. It is essential to combine the PES with complementary measurements of similar samples to relate the PES changes to changes in the interface defect density. Understanding of the nature of defects related to III-V materials is relevant to developing for example field-effect transistors which include a III-V channel, but research is still far from complete. In this thesis, PES measurements are utilized in studies of various III-V compound semiconductor materials. PES is combined with photoluminescence measurements to study the SiO2/GaAs, SiNx/GaAs and BaO/GaAs interfaces. Also the formation of novel materials InN and photoluminescent GaAs nanoparticles are studied. Finally, the formation of Ga interstitial defects in GaAsN is elucidated by combining calculational results with PES measurements.

Modification of Photocatalyst with Enhanced Photocatalytic Activity for Water

Increasing demand and shortage of energy resources and clean water due to the rapid development of industry, population growth and long term droughts have become an issue worldwide. As a result, global warming, long term droughts and pollution-related diseases are becoming more and more serious. The traditional technologies, such as precipitation, neutralization, sedimentation, filtration and waste immobilization, cannot prevent the pollution but restrict the waste chemicals only after the pollution emission. Meanwhile, most of these treatments cannot thoroughly degrade the contaminants and may generate toxic secondary pollutants into ecosystem. Heterogeneous photocatalysis as the innovative wastewater technology attracts many attention, because it is able to generate highly reactive transitory species for total degradation of organic compounds, water pathogens and disinfection by-products. Semiconductor as photocatalysts have demonstrated their efficiency in degrading a wide range of organics into readily biodegradable compounds, and eventually mineralized them to innocuous carbon dioxide and water. But, the efficiency of photocatalysis is limited, and hence, it is crucial issue to modify photocatalyst to enhance photocatalytic activity. In this thesis, first of all, two literature views are conducted. A survey of materials for photocatalysis has been carried out in order to summarize the properties and the applications of photocatalysts that have been developed in this field. Meanwhile, the strategy for the improvement of photocatalytic activity have been explicit discussed. Furthermore, all the raw material and chemicals used in this work have been listed as well as a specific experimental process and characterization method has been described. The synthesize methods of different photocatalysts have been depicted step by step. Among these cases, different modification strategies have been used to enhance the efficiency of photocatalyst on degradation of organic compounds (Methylene Blue or Phenol). For each case, photocatalytic experiments have been done to exhibit their photocatalytic activity.The photocatalytic experiments have been designed and its process have been explained and illustrated in detailed. Moreover, the experimental results have been shown and discussion. All the findings have been demonstrated in detail and discussed case by case. Eventually, the mechanisms on the improvement of photocatalytic activities have been clarified by characterization of samples and analysis of results. As a conclusion, the photocatalytic activities of selected semiconductors have been successfully enhanced via choosing appropriate strategy for the modification of photocatalysts.

Spectrally Tuned Lanthanide Photoluminescence for Point-of-Care Testing

Point-of-care (POC) –diagnostics is a field with rapidly growing market share. As these applications become more widely used, there is an increasing pressure to improve their performance to match the one of a central laboratory tests. Lanthanide luminescence has been widely utilized in diagnostics because of the numerous advantages gained by the utilization of time-resolved or anti-Stokes detection. So far the use of lanthanide labels in POC has been scarce due to limitations set by the instrumentation required for their detection and the shortcomings, e.g. low brightness, of these labels. Along with the advances in the research of lanthanide luminescence, and in the field of semiconductors, these materials are becoming a feasible alternative for the signal generation also in the future POC assays. The aim of this thesis was to explore ways of utilizing time-resolved detection or anti-Stokes detection in POC applications. The long-lived fluorescence for the time-resolved measurement can be produced with lanthanide chelates. The ultraviolet (UV) excitation required by these chelates is cumbersome to produce with POC compatible fluorescence readers. In this thesis the use of a novel light-harvesting ligand was studied. This molecule can be used to excite Eu(III)-ions at wavelengths extending up to visible part of the spectrum. An enhancement solution based on this ligand showed a good performance in a proof-of-concept -bioaffinity assay and produced a bright signal upon 365 nm excitation thanks to the high molar absorptivity of the chelate. These features are crucial when developing miniaturized readers for the time-resolved detection of fluorescence. Upconverting phosphors (UCPs) were studied as an internal light source in glucose-sensing dry chemistry test strips and ways of utilizing their various emission wavelengths and near-infrared excitation were explored. The use of nanosized NaYF :Yb3+,Tm3+-particles enabled the replacement of an external UV-light source with a NIR-laser and gave an additional degree of freedom in the optical setup of the detector instrument. The new method enabled a blood glucose measurement with results comparable to a current standard method of measuring reflectance. Microsized visible emitting UCPs were used in a similar manner, but with a broad absorbing indicator compound filtering the excitation and emission wavelengths of the UCP. This approach resulted in a novel way of benefitting from the non-linear relationship between the excitation power and emission intensity of the UCPs, and enabled the amplification of the signal response from the indicator dye.

Hardware design of a multiconverter for hybrid vehicle applications

Hybridiajoneuvosovellukset vaativat usein sekä korkea- että matalajännitejärjestelmän. Korkeajännitejärjestelmä sisältää yleensä energiavaraston, joka on joko superkondansaattori tai korkeajänniteakusto, dieselgeneraattorin tai range extenderin ja ajokäytön. Korkeajännitejärjestelmään liitetään usein myös erilaisia apukäyttöjä kuten kompressoreita ja hydraulipumppuja. Matalajännitejärjelmä koostuu yleensä ohjausyksiköistä, ajovaloista, yms. laitteista. Perinteisesti matalajännitejärjestelmää on syötetty dieselmoottorin laturista, mutta korkeajännitejärjestelmien myötä DC/DC-hakkurin käyttäminen korkea- ja matalajännitejärjestelmien välillä on herättänyt kiinnostusta, koska tällöin laturin voisi poistaa ja matalajänniteakustoa pienentää. Tässä työssä kuvatun monilähöisen tehonmuokkaimen invertterisilta soveltuu apukäyttöjen ajamiseen, ja erotettu DC/DC-hakkuri matalajännitejärjestelmän syöttämiseen. Tässä työssä käydään läpi edellä mainitun tehonmuokkaimen suunnittelu, keskittyen eritoten laitteen korkeajänniteosien mitoitukseen ja termiseen suunniteluun. DC/DC-hakkurin osalta perinteisiä piistä valmistettuja IGBT transistoreja vertaillaan piikarbidi MOSFET transistoreihin. Lämpömallilaskujen paikkaansapitävyyttä tutkitaan suorittamalla prototyyppilaitteelle hyötysuhdemittaus, jonka tuloksia verrataan laskettuihin tuloksiin. Lämpömallin parannusmahdollisuuksia käsitellään myös hyötysuhdemittauksen tulosten perusteella.

Two-dimensional drift-diffusion simulation of organic solar cells

The aim of this master's thesis is to develop a two-dimensional drift-di usion model, which describes charge transport in organic solar cells. The main bene t of a two-dimensional model compared to a one-dimensional one is the inclusion of the nanoscale morphology of the active layer of a bulk heterojunction solar cell. The developed model was used to study recombination dynamics at the donor-acceptor interface. In some cases, it was possible to determine e ective parameters, which reproduce the results of the two-dimensional model in the one-dimensional case. A summary of the theory of charge transport in semiconductors was presented and discussed in the context of organic materials. Additionally, the normalization and discretization procedures required to nd a numerical solution to the charge transport problem were outlined. The charge transport problem was solved by implementing an iterative scheme called successive over-relaxation. The obtained solution is given as position-dependent electric potential, free charge carrier concentrations and current densities in the active layer. An interfacial layer, separating the pure phases, was introduced in order to describe charge dynamics occurring at the interface between the donor and acceptor. For simplicity, an e ective generation of free charge carriers in the interfacial layer was implemented. The pure phases simply act as transport layers for the photogenerated charges. Langevin recombination was assumed in the two-dimensional model and an analysis of the apparent recombination rate in the one-dimensional case is presented. The recombination rate in a two-dimensional model is seen to e ectively look like reduced Langevin recombination at open circuit. Replicating the J-U curves obtained in the two-dimensional model is, however, not possible by introducing a constant reduction factor in the Langevin recombination rate. The impact of an acceptor domain in the pure donor phase was investigated. Two cases were considered, one where the acceptor domain is isolated and another where it is connected to the bulk of the acceptor. A comparison to the case where no isolated domains exist was done in order to quantify the observed reduction in the photocurrent. The results show that all charges generated at the isolated domain are lost to recombination, but the domain does not have a major impact on charge transport. Trap-assisted recombination at interfacial trap states was investigated, as well as the surface dipole caused by the trapped charges. A theoretical expression for the ideality factor n_id as a function of generation was derived and shown to agree with simulation data. When the theoretical expression was fitted to simulation data, no interface dipole was observed.

Pulssitettu laserablaatio mikrofluidisten kanavistojen sarjatuotantomenetelmänä

Puolijohteiden yleistyttyä vuodesta 1948 alkaen, ovat elektroniset laitteet pienentyneet jatkuvasti tehojen kuitenkin kasvaessa. Kasvaneet tehotiheydet kuitenkin vaikeuttavat laitesuunnittelua, sillä puoljohdekomponenttien suorituskyvylle ja eliniälle on oleellista lämpötilojen ja lämpötilavaihteluiden minimointi. Perinteisen ilmajäähdytyksen lähestyessä rajojaan niin kokonaistehon kuin järkevän energiatehokkuudenkin suhteen, on parhaaksi seuraavaksi teknologiaksi ennustettu kaksifaasijäähdytystä, jonka suorituskyky ja energiatehokkuus ovat vaaditulla tasolla. Kaksifaasijäähdytyksen optimaaliselle toiminnalle tärkeää on hyvin suunniteltu ja tarkasti valmistettu lämmönsiirtopinta, jota kutsutaan mikrokanavistoksi. Pulssitettu laserkaiverrus on edistynyt valmistustekniikka, jonka tarkkuus ja luotettavuus sopisivat mikrokanavistojen valmistamiseen. Laserkaiverruksella saavutettavat lopputulokset vaihtelevat kuitenkin materiaalista riippuen ja kupari – jota käytetään yleisesti lämmönjohteena – on eräs huonoimmin lasertyöstöön reagoivista materiaaleista ja siksi on oleellista selvittää laser-kaiverruksen toimivuutta kuparisten mikrokanavistojen valmistuksessa. Pulssitetun laser-kaiverruksen eri variaatioista nanosekunti-luokan pulssinpituuksilla toimivat laitteet ovat jatkuvan tuotannon kannalta paras vaihtoehto niiden hyvän tuottavuuden, saatavuuden sekä kohtuullisen alkuinvestoinnin vuoksi. Käytännön kaiverruskokeiden perusteella selvisi, että menetelmä on laatunsa ja tarkkuutensa puolesta sopiva varsinaiseen tuotantoon. Kaiverruksen tehokkuus kuparia työstettäessä on kuitenkin ennakoituakin heikompi ja niin valmistus- kuin suunnitelu-prosessikin vaativat vielä jatkotutkimusta ja -kehitystä.