Hydrogen-induced changes in the breakdown voltage of InP HEMTs

In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases following exposure to H2. This BVDG shift is nonrecoverable. The increase in BVDG is found to be due to a decrease in the carrier concentration in the extrinsic portion of the device.We provide evidence that H2 reacts with the exposed InAlAs surface in the extrinsic region next to the gate, changing the underlying carrier concentration. Hall measurements of capped and uncapped HEMT samples show that the decrease in sheet carrier concentration can be attributed to a modification of the exposed InAlAs surface. Consistent with this, XPS experiments on uncapped heterostructures give evidence of As loss from the InAlAs surface upon exposure to hydrogen.

Embedding theorems of funcitional classes, III

In this paper we obtain the necessary and sufficient conditions for embedding results of different function classes. The main result is a criterion for embedding theorems for the so-called generalized Weyl-Nikol'skii class and the generalized Lipschitz class. To define the Weyl-Nikol'skii class, we use the concept of a (λ,β)-derivative, which is a generalization of the derivative in the sense of Weyl. As corollaries, we give estimates of norms and moduli of smoothness of transformed Fourier series.