Nucleation of diamond on silicon, SiAlON, and graphite substrates coated with an a-C:H layer

We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of diamond. Substrates c-Si<100>, SiAlON, and highly oriented pyrolytic graphite {0001} were used in this study. The substrate surfaces were characterized with Auger electron spectroscopy (AES) while diamond growth was followed with Raman spectroscopy and scanning electron microscopy (SEM). It was found that on silicon and SiAlON substrates the presence of the a-C:H layer enabled diamond to grow readily without any polishing treatment. Moreover, more continuous diamond films could be grown when the substrate was polished with diamond powder prior to the deposition of the a-C:H layer. This important result suggests that the nucleation of diamond occurs readily on disordered carbon surfaces, and that the formation of this type of layer is indeed one step in the diamond nucleation mechanism. Altogether, the data refute the argument that silicon defects play a direct role in the nucleation process. Auger spectra revealed that for short deposition times and untreated silicon surfaces, the deposited layer corresponds to an amorphous carbon layer. In these cases, the subsequent diamond nucleation was found to be limited. However, when the diamond nucleation density was found to be high; i.e., after lengthy deposits of a¿C:H or after diamond polishing, the Auger spectra suggested diamondlike carbon layers.

New magnetotelluric data trough the boundary between the Ossa Morena and Centroiberian Zones

The south-western part of the Iberian Peninsula, including the southern branch of the Iberian Massif, has recently been the subject of several magnetotelluric (MT) studies. This area is made up of three different tectonic terranes: the South Portuguese Zone (SPZ), the Ossa Morena Zone (OMZ) and the Central Iberian Zone (CIZ). The boundaries between these zones are considered to be sutures, which appear as high electrical conductivity anomalies in the MT surveys. The OMZ is characterised by a conductive layer at middle-lower crustal levels. To investigate the continuity of this conductive layer into the CIZ, a new MT profile was carried out. This 75-km long ENE profile goes through the boundary between the OMZ and the CIZ. The results of a two-dimensional magnetotelluric inversion revealed a high-conductivity anomaly in the transition OMZ/CIZ (the so-called Central Unit), which is interpreted as due to interconnected graphite along shear planes. High-conductivity anomalies appeared in the middle crust of the CIZ, whose geometry and location are consistent with the conductive layer previously found in the OMZ, thus confirming the prolongation of the conductive layer into the CIZ. The top of this layer correlated spatially with a broad reflector detected by a seismic profile previously acquired in the same area. This, together with other geological and petrological evidence, points to a common origin for both features.