11 resultados para Dihedral angle

em Consorci de Serveis Universitaris de Catalunya (CSUC), Spain


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We study how the combination of long and short laser pulses can be used to induce torsion in an axially chiral biphenyl derivative (3,5-difluoro-3 ,5 -dibromo-4 -cyanobiphenyl). A long, with respect to the molecular rotational periods, elliptically polarized laser pulse produces 3D alignment of the molecules, and a linearly polarized short pulse initiates torsion about the stereogenic axis. The torsional motion is monitored in real-time by measuring the dihedral angle using femtosecond time-resolved Coulomb explosion imaging. Within the first 4 picoseconds (ps), torsion occurs with a period of 1.25 ps and an amplitude of 3◦ in excellent agreement with theoretical calculations. At larger times, the quantum states of the molecules describing the torsional motion dephase and an almost isotropic distribution of the dihedral angle is measured.We demonstrate an original application of covariance analysis of two-dimensional ion images to reveal strong correlations between specific ejected ionic fragments from Coulomb explosion. This technique strengthens our interpretation of the experimental data

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The sequence of pitches which form a musical melody can be transposed or inverted. Since the 1970s, music theorists have modeled musical transposition and inversion in terms of an action of the dihedral group of order 24. More recently music theorists have found an intriguing second way that the dihedral group of order 24 acts on the set of major and minor triads. We illustrate both geometrically and algebraically how these two actions are dual. Both actions and their duality have been used to analyze works of music as diverse as Hindemith and the Beatles.

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We have performed a detailed study of the zenith angle dependence of the regeneration factor and distributions of events at SNO and SK for different solutions of the solar neutrino problem. In particular, we discuss the oscillatory behavior and the synchronization effect in the distribution for the LMA solution, the parametric peak for the LOW solution, etc. A physical interpretation of the effects is given. We suggest a new binning of events which emphasizes the distinctive features of the zenith angle distributions for the different solutions. We also find the correlations between the integrated day-night asymmetry and the rates of events in different zenith angle bins. The study of these correlations strengthens the identification power of the analysis.

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A simple, low-cost accessory (patent pending) with only two flat mirrors and a new variable-angle mechanism has been developed for infrared specular reflectance measurements. The system allows the angles of incidence to be varied continuously from 15° (near normal incidence) to 85° (near grazing angle) without losing the alignment of the accessory. The reflectivity of boron nitride thin films deposited on metallic substrates has been measured at different angles of incidence to demonstrate the utility of this accessory.

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We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low-angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in nonactive slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective line tension, the deformations of a dislocation assembly cannot be described by local elastic interactions with a constant tension or stiffness. A nonlocal elastic kernel results as a consequence of long-range interactions between dislocations. In light of this result, we revise statistical depinning theories of dislocation assemblies and compare the theoretical results with numerical simulations and experimental data.

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Nous avons analysé l'angle naso-labial et les différents facteurs qui l'influencent, chez des patients de 9 ans ± 1,4. Nous avons obten u une valeur moyenne de 115,30 ± 10,8. L'inclinaison et la position de l'incisive supérieure et l'angle ANB constituent les facteurs osseux et dentaires qui ont la plus grande répercussion sur l'angle naso-labial. Le sexe et l'age n'ont pas eu d'influences statistiquement significatives sur les résultats. L'incompétence labiale s'est avérée etre la cause d'un angle plus aigu

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Nous avons analysé l'angle naso-labial et les différents facteurs qui l'influencent, chez des patients de 9 ans ± 1,4. Nous avons obten u une valeur moyenne de 115,30 ± 10,8. L'inclinaison et la position de l'incisive supérieure et l'angle ANB constituent les facteurs osseux et dentaires qui ont la plus grande répercussion sur l'angle naso-labial. Le sexe et l'age n'ont pas eu d'influences statistiquement significatives sur les résultats. L'incompétence labiale s'est avérée etre la cause d'un angle plus aigu

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The electron transmission and bound state properties of a quantum wire with a sharp bend at arbitrary angle are studied, extending results on the right angle sharp bend (the L¿shaped wire). These new results are compared to those of a similar structure, the circular bend wire. The possibility of using a bent wire to perform transistor action is also discussed.

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A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si