Depinning transition of dislocation assemblies: Pileups and low-angle grain boundaries

We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low-angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in nonactive slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective line tension, the deformations of a dislocation assembly cannot be described by local elastic interactions with a constant tension or stiffness. A nonlocal elastic kernel results as a consequence of long-range interactions between dislocations. In light of this result, we revise statistical depinning theories of dislocation assemblies and compare the theoretical results with numerical simulations and experimental data.

Growth of unstable interfaces in disordered media

The effects of a disordered medium in the growth of unstable interfaces are studied by means of two local models with multiplicative and additive quenched disorder, respectively. For short times and large pushing the multiplicative quenched disorder is equivalent to a time-dependent noise. In this regime, the linear dispersion relation contains a destabilizing contribution introduced by the noise. For long times, the interface always gets pinned. We model the systematics of the pinned shapes by means of an effective nonlinear model. These results show good agreement with numerical simulations. For the additive noise we find numerically that a depinning transition occurs.

Growth of a vortex polycrystal in type II superconductors

We discuss the formation of a vortex polycrystal in type II superconductors from the competition between pinning and elastic forces. We compute the elastic energy of a deformed grain boundary, which is strongly nonlocal, and obtain the depinning stress for weak and strong pinning. Our estimates for the grain size dependence on the magnetic field strength are in good agreement with previous experiments on NbMo. Finally, we discuss the effect of thermal noise on grain growth.

Quantum tunneling of domain walls in ferromagnets

We present a theoretical study of the quantum depinning of domain walls. Our approach extends earlier work by Stamp and confirms his suggestion that quantum tunneling of domain walls in ferromagnets may reveal itself at a macroscopic level in a manner similar to the Josephson effect in superconductors. The rate of tunneling of a domain wall through a barrier formed by a planar defect is calculated in terms of macroscopic parameters of the ferromagnet. A universal behavior of the WKB exponent in the limit of small barriers is demonstrated. The effect of dissipation on the tunneling rate is studied. It is argued that quantum diffusion of domain walls apparently explains a nonthermal magnetic relaxation observed in some materials at low temperatures.

Magnetic properties and domain-wall motion in single-crystal BaFe10.2Sn0.74Co0.66O19

The magnetic properties of BaFe12O19 and BaFe10.2Sn0.74Co0.66O19 single crystals have been investigated in the temperature range (1.8 to 320 K) with a varying field from -5 to +5 T applied parallel and perpendicular to the c axis. Low-temperature magnetic relaxation, which is ascribed to the domain-wall motion, was performed between 1.8 and 15 K. The relaxation of magnetization exhibits a linear dependence on logarithmic time. The magnetic viscosity extracted from the relaxation data, decreases linearly as temperature goes down, which may correspond to the thermal depinning of domain walls. Below 2.5 K, the viscosity begins to deviate from the linear dependence on temperature, tending to be temperature independent. The near temperature independence of viscosity suggests the existence of quantum tunneling of antiferromagnetic domain wall in this temperature range.