Analysis of linear networks with inconsistent initial conditions

This paper presents a new method to analyze timeinvariant linear networks allowing the existence of inconsistent initial conditions. This method is based on the use of distributions and state equations. Any time-invariant linear network can be analyzed. The network can involve any kind of pure or controlled sources. Also, the transferences of energy that occur at t=O are determined, and the concept of connection energy is introduced. The algorithms are easily implemented in a computer program.

El Cercle de l'Anell : anàlisi del consum d'un producte cultural segons el model del Circuit de la Cultura : tolkiendili i ringers. El cas de l'Smial de Lórien.

Anàlisi del fenomen cultural creat al voltant de J.R.R. Tolkien, l'autor d'El Senyor dels Anells, tot emprant el model del Circuit de la Cultura (Du Gay et als). La recerca se centra en el Consum: els fans i les fans de Tolkien i de la trilogia cinematogràfica 'The Lord of the Rings': tolkiendili i ringers.

Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors

This paper reports the microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors and annealing under sulfurizing conditions as a function of the temperature of sulfurization. The characterization of the layers by Raman scattering, scanning electron microscopy, Auger electron spectroscopy, and XRD techniques has allowed observation of the strong dependence of the crystalline quality of these layers on the sulfurization temperature: Higher sulfurization temperatures lead to films with improved crystallinity, larger average grain size, and lower density of structural defects. However, it also favors the formation of a thicker MoS2 interphase layer between the CuInS2 absorber layer and the Mo back contact. Decreasing the temperature of sulfurization leads to a significant decrease in the thickness of this intermediate layer and is also accompanied by significant changes in the composition of the interface region between the absorber and the MoS2 layer, which becomes Cu rich. The characterization of devices fabricated with these absorbers corroborates the significant impact of all these features on device parameters as the open circuit voltage and fill factor that determine the efficiency of the solar cells.

A time-domain method for the analysis of thermal impedance response preserving the convolution form

The study of the thermal behavior of complex packages as multichip modules (MCM¿s) is usually carried out by measuring the so-called thermal impedance response, that is: the transient temperature after a power step. From the analysis of this signal, the thermal frequency response can be estimated, and consequently, compact thermal models may be extracted. We present a method to obtain an estimate of the time constant distribution underlying the observed transient. The method is based on an iterative deconvolution that produces an approximation to the time constant spectrum while preserving a convenient convolution form. This method is applied to the obtained thermal response of a microstructure as analyzed by finite element method as well as to the measured thermal response of a transistor array integrated circuit (IC) in a SMD package.

Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells

An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance.

Disseny d’un circuit analògic reconfigurable

En l’actualitat, l’electrònica digital s’està apoderant de la majoria de camps de desenvolupament, ja que ofereix un gran ventall de possibilitats que permeten fer front a gran quantitat de problemàtiques. Poc a Poc s’ha anat prescindint el màxim possible de l’electrònica analògica i en el seu lloc s’han utilitzat sistemes microprocessats, PLDs o qualsevol altre dispositiu digital, que proporciona beneficis enlluernadors davant la fatigosa tasca d’implementar una solució analògica.Tot i aquesta tendència, és inevitable la utilització de l’electrònica analògica, ja que el mon que ens envolta és l’entorn en el que han de proporcionar servei els diferents dissenys que es realitzen, i aquest entorn no és discret sinó continu. Partint d’aquest punt ben conegut hem de ser conscients que com a mínim els filtres d’entrada i sortida de senyal juntament amb els convertidors D/A A/D mai desapareixeran.Així doncs, aquests circuits analògics, de la mateixa forma que els digitals, han de sercomprovats un cop dissenyats, és en aquest apartat on el nostre projecte desenvoluparà un paper protagonista, ja que serà la eina que ha de permetre obtenir les diferents senyals característiques d’un determinat circuit, per posteriorment realitzar els tests que determinaran si es compleix el rang de correcte funcionament, i en cas de no complir, poder concretar quin paràmetre és el causant del defecte

El circuit comercial de Barcino: reflexions al voltant de les marques amfòriques

Barcino és encara avui una ciutat romana poc coneguda de la província Tarraconense, que segons la majoria d’especialistes fou fundada per raons polítiques. Malgrat això, una anàlisi detallada de les característiques econòmiques suggereixen que es va crear com a resultat de necessitats comercials, ja que es localitzava en una de les millors zones portuàries del NE de la península. L’article present pretén reconstruir tot el circuit comercial de Barcino a partir de les nombroses estampilles d’àmfores trobades en les excavacions. Aquestes marques comercials no solament evidencien una pròspera producció de vi en l’àrea, sinó també la corresponent demanda externa.

Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000 nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the μc-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the μc-Si:H layer, mainly at long wavelengths, to be quantified.

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.