Preparació de puntes de tungstè per a microscòpia d'efecte túnel (STM)

Es presenten els resultats experimentals obtinguts durant l’estudi sistemàtic realitzat de la preparació electroquímica de puntes de tungstè per al Microscopi d’Efecte Túnel (STM), fent servir dos electròlits: KOH i NaOH. L’estudi sobre la morfologia, longitud de la punta i radi de curvatura de la punta en funció del voltatge aplicat i les concentracions de l’electròlit es descriu al capítol 3. La caracterització de les puntes es va dur a terme, per una part, mitjançant un microscòpic electrònic de rastreig (SEM) i per l’altre banda, amb el ús de les puntes obtingudes al STM. En resumen, els resultats mostren que ambdós electròlits permeten obtenir puntes que es poden fer servir amb èxit per l’obtenció d’imatges amb l’STM. Les millors puntes són aquelles que s’obtenen dins de rangs de concentracions d’electròlit baixes, entre valor de 10 a 15% en pes pel NaOH i entre 10 i 20% pel KOH i rangs de voltatge entre 3 a 7 V pel NaOH i 4 a 8 V pel KOH. S’observa que es requereixen temps d’atac electroquímic menors fent servir com a electròlit NaOH. S’estudia, en el capítol 4, el tractament que requereix la punta per tal d’eliminar les impureses de la seva superfície. Es realitzen diferents proves amb tres mètodes de neteja: (1) tractament químic, (2) bombardeig iònic i (3) tractament tèrmic de recuit. En el capítol 5 del projecte s’analitzen les imatges d’una mostra d’or, Au(110), d’estructura coneguda, amb el microscopi d’efecte túnel STM) del laboratori fent servir les puntes obtingudes sota les condicions considerades òptimes. El resultat confirma el bon comportament de les puntes obtingudes sota les condicions descrites en els capítols anteriors i establert una pauta a seguir per obtenir puntes d’una manera senzilla i reproduïble.

Nanotermoparells: heterounions de nanowires

Projecte de recerca elaborat a partir d’una estada a la University of California a Irvine, EEUU, entre juliol del 2007 i gener del 2008. Els termoparells són actualment els sensors de temperatura més populars i més utilitzats per a un ampli rang d’aplicacions: industrials, domèstiques, etc. Aconseguir miniaturar els dispositius fins a dimensions extremadament petites obra un ampli rang de noves aplicacions per aquests dispositius, per exemple, en el camp de la tecnologia lab-on-a-chip. En aquesta investigació, el concepte de termoparell, és a dir, dos cables de diferent metall connectats per un extrem s’ha extrapolat a l’escala nanomètrica, utilitzant nanowires com a element de construcció. Aquests nanowires s’han sintetitzat a través d’un nou procediment desenvolupat en el grup d’investigació de la Universitat de California, Irvine, que ha permès treballar amb nanowires de diferents dimensions (control independent de l’alçada i amplada) i un major grau d’èxit en la fabricació d’aquests termometres. El mètode també permet dipositar aquestes nanoestructures sobre substractes no conductors de manera controlable, simplificant notablement tot el procés de fabricació. L’obtenció d’aquests dispositius ha permès demostrar que, a part de ser bons sensors de temperatura a nivell macroscòpic (fonts de calor ambientals), també permet la determinació de temperatura a nivell microscòpic (fonts de calor focalitzada, com és el cas de feixos làser). Per a la seva caracterització ha estat necessari l’ús de tecnologia puntera (làsers, amplificadors, microscopis de forces atòmiques) i inclòs el disseny de nous dispositius. Aquests nanotermoparells presenten propietats extraordinàries, com una gran sensitivitat, gran velocitat de resposta a estímuls tèrmics, i un comportament estable vers l’ús i el temps.

Automatització d'un procés de fabricació de peces plàstiques

RESUM L'automatització s'utilitza des de fa molts anys, tot i que va començar a agafar la definició que coneixem actualment al voltant dels anys seixanta i setanta, moment en què es comencen a comercialitzar els primers PLC. A partir d'aquí, el seu creixement ha estat exponencial. En aquest sentit, la tecnologia ha anat avançant i ha augmentat els components que la forma, per això a hores d'ara encara no sabem fins on podrà arribar i què aconseguirà. Per a la indústria tot això ha significat l'automatització de processos que fins ara utilitzaven molt mà d'obra, reduint-la dràsticament. Una de les indústries que més s'ha beneficiat de tots aquests avenços ha estat la de l'automoció, concretament les seves grans línies de producció, automatitzades a uns nivells que fins fa poc temps eren impensables. Aquest projecte forma part d'aquesta indústria, no directament per a la construcció de l'automòbil, sinó indirectament, ja que l'empresa per a la qual s'ha fet l'automatització fabrica peces plàstiques per a automòbils. Concretament, unes peces amb uns injerts metàl•lics conductors que es munten a tots els vehicles i s'utilitzen per accionar els neteja vidres dels cotxes. Aquest fet implica que la fabricació i el disseny de la peça sigui curosament vigilat i controlat per al client final, amb uns controls de qualitat extremadament exigents. El funcionament del procés de fabricació es fa a partir d'unes peces de plàstic produïdes per una injectora que es fan passar per unes estacions automatitzades, cada una de les quals fa una acció concreta per aconseguir el muntatge final.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

Drift compensation of gas sensor array data by Orthogonal Signal Correction

Drift is an important issue that impairs the reliability of gas sensing systems. Sensor aging, memory effects and environmental disturbances produce shifts in sensor responses that make initial statistical models for gas or odor recognition useless after a relatively short period (typically few weeks). Frequent recalibrations are needed to preserve system accuracy. However, when recalibrations involve numerous samples they become expensive and laborious. An interesting and lower cost alternative is drift counteraction by signal processing techniques. Orthogonal Signal Correction (OSC) is proposed for drift compensation in chemical sensor arrays. The performance of OSC is also compared with Component Correction (CC). A simple classification algorithm has been employed for assessing the performance of the algorithms on a dataset composed by measurements of three analytes using an array of seventeen conductive polymer gas sensors over a ten month period.

Nanoscale electrical conductivity of the purple membrane monolayer

Nanoscale electron transport through the purple membrane monolayer, a two-dimensional crystal lattice of the transmembrane protein bacteriorhodopsin, is studied by conductive atomic force microscopy. We demonstrate that the purple membrane exhibits nonresonant tunneling transport, with two characteristic tunneling regimes depending on the applied voltage (direct and Fowler-Nordheim). Our results show that the purple membrane can carry significant current density at the nanometer scale, several orders of magnitude larger than previously estimated by macroscale measurements.

Bifurcations and chaos in single-roll natural convection with low Prandtl number

Convective flows of a small Prandtl number fluid contained in a two-dimensional cavity subject to a lateral thermal gradient are numerically studied by using different techniques. The aspect ratio (length to height) is kept at around 2. This value is found optimal to make the flow most unstable while keeping the basic single-roll structure. Two cases of thermal boundary conditions on the horizontal plates are considered: perfectly conducting and adiabatic. For increasing Rayleigh numbers we find a transition from steady flow to periodic oscillations through a supercritical Hopf bifurcation that maintains the centrosymmetry of the basic circulation. For a Rayleigh number of about ten times that of the Hopf bifurcation the system initiates a complex scenario of bifurcations. In the conductive case these include a quasiperiodic route to chaos. In the adiabatic one the dynamics is dominated by the interaction of two Neimark-Sacker bifurcations of the basic periodic solutions, leading to the stable coexistence of three incommensurate frequencies, and finally to chaos. In all cases, the complex time-dependent behavior does not break the basic, single-roll structure.

Transparent conducting thin films by the co-sputtering of ZnO-ITO targets

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film.

Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films

Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 - 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

Polyconductivity in polypyrrole: the correlated electron glass

p-toluensulfonate doped polypyrrole ~PPy!, undergoes an electric-field induced reversible transition from an insulating state to a highly conductive one. The spatially average field can be as small as 200 V/cm, when the temperature of the sample is below 20 K. The applied electric field leads to a sharp jump in the value of the current to a value which is nearly five orders of magnitude higher than before. When the applied electric field is reduced to below a critical value, the system switches back to a low conductive state. The effect is reversible, symmetric in voltage, and reproducible for different samples. The switching is, we believe, an electronic glass melting transition and it is due to the disordered, highly charged granular nature of PPy.

Polyconductivity in polypyrrole: The correlated electron gas

p-toluensulfonate doped polypyrrole (PPy), undergoes an electric-field induced reversible transition from an insulating state to a highly conductive one. The spatially average field can be as small as 200 V/cm, when the temperature of the sample is below 20 K. The applied electric field leads to a sharp jump in the value of the current to a value which is nearly five orders of magnitude higher than before. When the applied electric field is reduced to below a critical value, the system switches back to a low conductive state. The effect is reversible, symmetric in voltage, and reproducible for different samples. The switching is, we believe, an electronic glass melting transition and it is due to the disordered, highly charged granular nature of PPy.

New magnetotelluric data trough the boundary between the Ossa Morena and Centroiberian Zones

The south-western part of the Iberian Peninsula, including the southern branch of the Iberian Massif, has recently been the subject of several magnetotelluric (MT) studies. This area is made up of three different tectonic terranes: the South Portuguese Zone (SPZ), the Ossa Morena Zone (OMZ) and the Central Iberian Zone (CIZ). The boundaries between these zones are considered to be sutures, which appear as high electrical conductivity anomalies in the MT surveys. The OMZ is characterised by a conductive layer at middle-lower crustal levels. To investigate the continuity of this conductive layer into the CIZ, a new MT profile was carried out. This 75-km long ENE profile goes through the boundary between the OMZ and the CIZ. The results of a two-dimensional magnetotelluric inversion revealed a high-conductivity anomaly in the transition OMZ/CIZ (the so-called Central Unit), which is interpreted as due to interconnected graphite along shear planes. High-conductivity anomalies appeared in the middle crust of the CIZ, whose geometry and location are consistent with the conductive layer previously found in the OMZ, thus confirming the prolongation of the conductive layer into the CIZ. The top of this layer correlated spatially with a broad reflector detected by a seismic profile previously acquired in the same area. This, together with other geological and petrological evidence, points to a common origin for both features.

Deep crustal electromagnetic structure of Bhuj earthquake region (India) and its implications

The existence of fluids and partial melt in the lower crust of the seismically active Kutch rift basin (on the western continental margin of India) owing to underplating has been proposed in previous geological and geophysical studies. This hypothesis is examined using magnetotelluric (MT) data acquired at 23 stations along two profiles across Kutch Mainland Uplift and Wagad Uplift. A detailed upper crustal structure is also presented using twodimensional inversion of MT data in the Bhuj earthquake (2001) area. The prominent boundaries of reflection in the upper crust at 5, 10 and 20 km obtained in previous seismic reflection profiles correlate with conductive structures in our models. The MT study reveals 1-2 km thick Mesozoic sediments under the Deccan trap cover. The Deccan trap thickness in this region varies from a few meters to 1.5 km. The basement is shallow on the northern side compared to the south and is in good agreement with geological models as well as drilling information. The models for these profiles indicate that the thickness of sediments would further increase southwards into the Gulf of Kutch. Significant findings of the present study indicate 1) the hypocentre region of the earthquake is devoid of fluids, 2) absence of melt (that is emplaced during rifting as suggested from the passive seismological studies) in the lower crust and 3) a low resistive zone in the depth range of 5-20 km. The present MT study rules out fluidsand melt (magma) as the causative factors that triggered the Bhuj earthquake. The estimated porosity value of 0.02% will explain 100-500 ohm·m resistivity values observed in the lower crust. Based on the seismic velocities and geochemical studies, presence of garnet is inferred. The lower crust consists of basalts - probably generated by partial melting of metasomatised garnet peridotite at deeper depths in the lithosphere - and their composition might be modified by reaction with the spinel peridotites.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.