175 resultados para Relaxation oscillators


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We investigate how correlations between the diversity of the connectivity of networks and the dynamics at their nodes affect the macroscopic behavior. In particular, we study the synchronization transition of coupled stochastic phase oscillators that represent the node dynamics. Crucially in our work, the variability in the number of connections of the nodes is correlated with the width of the frequency distribution of the oscillators. By numerical simulations on Erdös-Rényi networks, where the frequencies of the oscillators are Gaussian distributed, we make the counterintuitive observation that an increase in the strength of the correlation is accompanied by an increase in the critical coupling strength for the onset of synchronization. We further observe that the critical coupling can solely depend on the average number of connections or even completely lose its dependence on the network connectivity. Only beyond this state, a weighted mean-field approximation breaks down. If noise is present, the correlations have to be stronger to yield similar observations.

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In this work we consider the nonlinear equivalent representation form of oscillators that exhibit nonlinearities in both the elastic and the damping terms. The nonlinear damping effects are considered to be described by fractional power velocity terms which provide better predictions of the dissipative effects observed in some physical systems. It is shown that their effects on the system dynamics response are equivalent to a shift in the coefficient of the linear damping term of a Duffing oscillator. Then, its numerical integration predictions, based on its equivalent representation form given by the well-known forced, damped Duffing equation, are compared to the numerical integration values of its original equations of motion. The applicability of the proposed procedure is evaluated by studying the dynamics response of four nonlinear oscillators that arise in some engineering applications such as nanoresonators, microresonators, human wrist movements, structural engineering design, and chain dynamics of polymeric materials at high extensibility, among others

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The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain

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The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

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El present projecte tracta sobre la caracterització d'oscil·ladors basats en ressonadors micro/nanoelectromecànics (M/NEMS) i la seva aplicació com a sensors de massa. Els oscil·ladors utilitzats es basen en un pont i una palanca ressoants M/NEMS, integrats en tecnologia CMOS. En primer lloc s'ha fet una introducció teòrica als conceptes utilitzats per a entendre el funcionament i la caracterització dels dispositius. A continuació s'han realitzat proves per tal de caracteritzar els paràmetres importants per a l'ús dels oscil·ladors com a sensors de massa, com la seva estabilitat en freqüència. Per acabar s'han aplicat aquests sensors en la caracterització i modelització del flux de massa a través d'obertures de dimensions micromètriques.

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S’ha demostrat que la pràctica d'estats de relaxació profunda redueix el dolor i incrementa el benestar i la qualitat de vida. Els estats de relaxació profunda i meditació estan al seu torn associats a patrons electroencefalogràfics (EEG) característics. En el present projecte proposem un procediment pal·liatiu del dolor basat en l 'entrenament autodidàctic per aconseguir aquests estats de relaxació. Per a això es proposa retro-alimentar al subjecte un senyal auditiu reflex de la seva activitat EEG que l'ajudi a modificar voluntàriament la seva activitat cerebral, la qual cosa li permet aproximar-la progressivament al patró EEG corresponent al de relaxació profunda desitjat. S’ha dissenyat un protocol d'entrenament d'estats mentals de relaxació i meditació (entre altres) i implementat un programa que processa el senyal EEG i genera un senyal auditiu reflex de l'activitat cerebral de l'individu. També registra les lectures EEG del progrés de l'individu, genera les gràfiques corresponents i genera dades estadístiques per a futur anàlisi.

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L'ansietat acadèmica i davant els exàmens com a fòbia específica de tipus situacional és un trastorn infantil i juvenil d'efectes pertorbadors i negatius que repercuteixen sobre la salut mental i emocional, el rendiment acadèmic i la integració social de l'estudiant que la pateix. En aquest treball s'especifiquen les seves característiques clíniques. Així mateix, s'inclou un cas clínic d'un adolescent de 14 anys que patia d'aquest trastorn fòbic escolar, acompanyat de baixa autoestima personal i dificultats d'adaptació amb el seu grup-classe. Se li va aplicar una avaluació i tractament de tall cognitiu-conductual que ha tingut com a finalitat la superació de la fòbia, i la millora del seu rendiment acadèmic i social. D'entre totes les eines terapèutiques utilitzades destaquen: l'exposició en viu, i l'aprenentatge i utilització de mecanismes de control de l'ansietat (la relaxació Jacobson i la reestructuració cognitiva). Finalment, assenyalar que aquesta intervenció terapèutica ha estat possible gràcies a la participació coordinada i cooperant de l'equip interdisciplinari.

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L'objectiu d'aquest treball és el disseny d'un tractament de relaxació progressiva online, basat en l'evidència de la seva efectivitat en teràpies presencials, per poder abordar la simptomatologia en els primers estadis del dolor crònic abdominal en nens i adolescents.

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El projecte se centra en desenvolupar una aplicació per un hotel amb instal·lacions d'esbarjo i relaxació.

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El projecte desenvolupat és un sistema per a un hotel amb diferents instal·lacions d'esbarjo i relaxació, que permeti als seus clients obtenir informació d'aquestes activitats i recursos, i reservar places si escau, i als encarregats del establiment realitzar el control i gestió de les possibles peticions.

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We developed a procedure that combines three complementary computational methodologies to improve the theoretical description of the electronic structure of nickel oxide. The starting point is a Car-Parrinello molecular dynamics simulation to incorporate vibrorotational degrees of freedom into the material model. By means ofcomplete active space self-consistent field second-order perturbation theory (CASPT2) calculations on embedded clusters extracted from the resulting trajectory, we describe localized spectroscopic phenomena on NiO with an efficient treatment of electron correlation. The inclusion of thermal motion into the theoretical description allowsus to study electronic transitions that, otherwise, would be dipole forbidden in the ideal structure and results in a natural reproduction of the band broadening. Moreover, we improved the embedded cluster model by incorporating self-consistently at the complete active space self-consistent field (CASSCF) level a discrete (or direct) reaction field (DRF) in the cluster surroundings. The DRF approach offers an efficient treatment ofelectric response effects of the crystalline embedding to the electronic transitions localized in the cluster. We offer accurate theoretical estimates of the absorption spectrum and the density of states around the Fermi level of NiO, and a comprehensive explanation of the source of the broadening and the relaxation of the charge transferstates due to the adaptation of the environment

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We study the damage enhanced creep rupture of disordered materials by means of a fiber bundle model. Broken fibers undergo a slow stress relaxation modeled by a Maxwell element whose stress exponent m can vary in a broad range. Under global load sharing we show that due to the strength disorder of fibers, the lifetime ʧ of the bundle has sample-to-sample fluctuations characterized by a log-normal distribution independent of the type of disorder. We determine the Monkman-Grant relation of the model and establish a relation between the rupture life tʄ and the characteristic time tm of the intermediate creep regime of the bundle where the minimum strain rate is reached, making possible reliable estimates of ʧ from short term measurements. Approaching macroscopic failure, the deformation rate has a finite time power law singularity whose exponent is a decreasing function of m. On the microlevel the distribution of waiting times is found to have a power law behavior with m-dependent exponents different below and above the critical load of the bundle. Approaching the critical load from above, the cutoff value of the distributions has a power law divergence whose exponent coincides with the stress exponent of Maxwell elements

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Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the bulk (C). All of them are slightly exothermic with enthalpies below 50 meV/H atoms , indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 (A),360 (A'), and 430°C (B)] exhibit a kinetic-compensation effect characterized by a linea relationship between the activation entropy and enthalpy, which constitutes their signature. Their Si-H bond-dissociation energies have been determined to be E (Si-H)0=3.14 (A), 3.19 (A'), and 3.28 eV (B). In these cases it was possible to extract the formation energy E(DB) of the dangling bonds that recombine after Si-H bond breaking [0.97 (A), 1.05 (A'), and 1.12 (B)]. It is concluded that E(DB) increases with the degree of confinement and that E(DB)>1.10 eV for the isolated dangling bond in the bulk. After Si-H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion

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An analytic method to evaluate nuclear contributions to electrical properties of polyatomic molecules is presented. Such contributions control changes induced by an electric field on equilibrium geometry (nuclear relaxation contribution) and vibrational motion (vibrational contribution) of a molecular system. Expressions to compute the nuclear contributions have been derived from a power series expansion of the potential energy. These contributions to the electrical properties are given in terms of energy derivatives with respect to normal coordinates, electric field intensity or both. Only one calculation of such derivatives at the field-free equilibrium geometry is required. To show the useful efficiency of the analytical evaluation of electrical properties (the so-called AEEP method), results for calculations on water and pyridine at the SCF/TZ2P and the MP2/TZ2P levels of theory are reported. The results obtained are compared with previous theoretical calculations and with experimental values

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A general reduced dimensionality finite field nuclear relaxation method for calculating vibrational nonlinear optical properties of molecules with large contributions due to anharmonic motions is introduced. In an initial application to the umbrella (inversion) motion of NH3 it is found that difficulties associated with a conventional single well treatment are overcome and that the particular definition of the inversion coordinate is not important. Future applications are described