Petrou types D and II perfect-fluid solutions in generalized Kerr-Schild form.

Petrov types D and II perfect-fluid solutions are obtained starting from conformally flat perfect-fluid metrics and by using a generalized KerrSchild ansatz. Most of the Petrov type D metrics obtained have the property that the velocity of the fluid does not lie in the two-space defined by the principal null directions of the Weyl tensor. The properties of the perfect-fluid sources are studied. Finally, a detailed analysis of a new class of spherically symmetric static perfect-fluid metrics is given.

Access by Capacity and Peak-Load Pricing

Several European telecommunications regulatory agencies have recently introduced a fixed capacity charge (flat rate) to regulate access to the incumbent's network. The purpose of this paper is to show that the optimal capacity charge and the optimal access-minute charge analysed by Armstrong, Doyle, and Vickers (1996) have a similar structure and imply the same payment for the entrant. I extend the analysis tothe case where there is a competitor with market power. In this case, the optimalcapacity charge should be modified to avoid that the entrant cream-skims the market,fixing a longer or a shorter peak period than the optimal. Finally, I consider a multiproduct setting, where the effect of the product differentiation is exacerbated.

Coloquialismo y humor en South Park: análisis del doblaje al español

Este trabajo es un estudio sobre la traducción del coloquialismo y el humor en productos audiovisuales. Tomando como referencia el doblaje al español de South Park, se analizan algunos errores habituales en obras similares y se plantean estrategias de traducción efectivas, tanto a nivel textual como oracional.

Gènere i sexoafectivitat segons els adolescents dels usuaris dels centres oberts de la ciutat de Girona

L’objectiu d’aquest treball és conèixer la percepció que tenen els adolescents usuaris dels centres oberts de la ciutat de Girona sobre la sexualitat, l’afectivitat, quins rols de gènere se’n deriven i quines creences els sustenten. El disseny del treball ha estat qualitatiu, observacional, grups de discussió. Pel que fa als subjectes i al mètode, la població seleccionada ha estat de 33 adolescents i joves d’edats compreses entre els 12 i els 22 anys, usuaris de quatre centres oberts de Girona: el centre obert de Taialà, el Centre Obert de Font de la Pólvora (Onyar), el Centre Obert de Santa Eugènia i el Centre Obert del Barri Vell. Es van dur a terme grups de discussió d’una hora de duració sense descans amb d’entre 6 i 8 persones a partir d’un guió format per diversos mites i frases en relació a diversos temes (El festeig, la virginitat, la curiositat pel cos i per la sexualitat, els anticonceptius i les principals fonts d’informació) sobre les que havien de dir si estaven d’acord o no i qui creien que les deia (si un noi o una noia). Sobre els resultats del treball cal dir que s’ha observat la persistència d’algunes creences del model del amor romàntic en relació al rols de gènere com la definició de la dona vinculada a papers de cura i prevenció, una dona que té accés a la sexualitat però segueix estan catalogada per la vivència d’aquesta essent una persona “respectable” o una “puta”, que pren un rol més actiu en la iniciativa però no el l’assertivitat en les relacions; i un home, més impulsiu i sexual. En relació als comportaments sexuals destacar l’embaràs no desitjat com la principal preocupació de les relacions i el desconeixement/confusió entre els mètodes anticonceptius i de barrera disponibles a la xarxa de salut. Apareix la pornografia com a model emergent de relacions sexuals i models de relació entre homes i dones, en contraposició a altres fonts de informació i consulta tradicionals com els amics que segueixen essent la més significativa, la família, els serveis socials i educatius, i Internet. Com a conclusió cal dir que queda palesa la necessitat de incorporar una perspectiva de gènere en la formació curricular dels joves i el fet de seguir replantejant les millors estratègies d’intervenció per una concepció integradora de la sexualitat

New horizons for black holes and branes

We initiate a systematic scan of the landscape of black holes in any spacetime dimension using the recently proposed blackfold effective worldvolume theory. We focus primarily on asymptotically flat stationary vacuum solutions, where we uncover large classes of new black holes. These include helical black strings and black rings, black odd-spheres, for which the horizon is a product of a large and a small sphere, and non-uniform black cylinders. More exotic possibilities are also outlined. The blackfold description recovers correctly the ultraspinning Myers-Perry black holes as ellipsoidal even-ball configurations where the velocity field approaches the speed of light at the boundary of the ball. Helical black ring solutions provide the first instance of asymptotically flat black holes in more than four dimensions with a single spatial U(1) isometry. They also imply infinite rational non-uniqueness in ultraspinning regimes, where they maximize the entropy among all stationary single-horizon solutions. Moreover, static blackfolds are possible with the geometry of minimal surfaces. The absence of compact embedded minimal surfaces in Euclidean space is consistent with the uniqueness theorem of static black holes

Nonequilibrium phase transition in a model for the propagation of innovations among economic agents

We characterize the different morphological phases that occur in a simple one-dimensional model of propagation of innovations among economic agents [X. Guardiola et al., Phys. Rev E 66, 026121 (2002)]. We show that the model can be regarded as a nonequilibrium surface growth model. This allows us to demonstrate the presence of a continuous roughening transition between a flat (system size independent fluctuations) and a rough phase (system size dependent fluctuations). Finite-size scaling studies at the transition strongly suggest that the dynamic critical transition does not belong to directed percolation and, in fact, critical exponents do not seem to fit in any of the known universality classes of nonequilibrium phase transitions. Finally, we present an explanation for the occurrence of the roughening transition and argue that avalanche driven dynamics is responsible for the novel critical behavior.

La cubierta plana, un paseo por su historia

L’exposició “La cubierta plana, un paseo por su historia” pretén fer un recorregut per aquells moments de la nostra tradició arquitectònica en els quals el terrat ha tingut un paper cabdal. Les raons del seu èxit no poden cercar-se tan sols en el desenvolupament tecnològic, més aviat es poden trobar en la capacitat del terrat de ser usat i gaudit com una estança exterior dels edificis.Es tracta, doncs, d’una proposta de divulgació del coneixement actual sobre la coberta plana mitjançant documents i imatges d’època on el lector serà convidat a reconèixer els fils de la tradició que relliguen les més modernes propostes amb els terrats de l’arquitectura popular, pràcticament desapareguts.L’exposició està estructurada en sis blocs: 1. Inicis mítics i espais de l’habitar; 2. Mirades al món preindustrial: terrats a les arquitectures vernaculars; 3. Mirades al món preindustrial: àtics i balustrades en l’arquitectura del classicisme; 4. Els efectes de la industrialització: un nou impuls al terrat; 5. Moviment Modern: racionalisme, abstracció i metàfora de la màquina; i, 6. La coberta plana en un món global. La proposta invita als professionals a reflexionar sobre els lligams indestriables entre arquitectura i construcció.

High-SNR analytical performance of spatial multiplexing MIMO systems with CSI

In this paper, we investigate the average andoutage performance of spatial multiplexing multiple-input multiple-output (MIMO) systems with channel state information at both sides of the link. Such systems result, for example, from exploiting the channel eigenmodes in multiantenna systems. Dueto the complexity of obtaining the exact expression for the average bit error rate (BER) and the outage probability, we deriveapproximations in the high signal-to-noise ratio (SNR) regime assuming an uncorrelated Rayleigh flat-fading channel. Moreexactly, capitalizing on previous work by Wang and Giannakis, the average BER and outage probability versus SNR curves ofspatial multiplexing MIMO systems are characterized in terms of two key parameters: the array gain and the diversity gain. Finally, these results are applied to analyze the performance of a variety of linear MIMO transceiver designs available in the literature.

Supergravity models of (3+1)-dimensional QCD

The most general black M5-brane solution of eleven-dimensional supergravity (with a flat R4 spacetime in the brane and a regular horizon) is characterized by charge, mass and two angular momenta. We use this metric to construct general dual models of large-N QCD (at strong coupling) that depend on two free parameters. The mass spectrum of scalar particles is determined analytically (in the WKB approximation) and numerically in the whole two-dimensional parameter space. We compare the mass spectrum with analogous results from lattice calculations, and find that the supergravity predictions are close to the lattice results everywhere on the two dimensional parameter space except along a special line. We also examine the mass spectrum of the supergravity Kaluza-Klein (KK) modes and find that the KK modes along the compact D-brane coordinate decouple from the spectrum for large angular momenta. There are however KK modes charged under a U(1)×U(1) global symmetry which do not decouple anywhere on the parameter space. General formulas for the string tension and action are also given.

Soluble models in two-dimensional dilaton gravity

A one-parameter class of simple models of two-dimensional dilaton gravity, which can be exactly solved including back-reaction effects, is investigated at both classical and quantum levels. This family contains the RST model as a special case, and it continuously interpolates between models having a flat (Rindler) geometry and a constant curvature metric with a nontrivial dilaton field. The processes of formation of black hole singularities from collapsing matter and Hawking evaporation are considered in detail. Various physical aspects of these geometries are discussed, including the cosmological interpretation.

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC)

N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.