70 resultados para EPITAXIAL CRYSTALLIZATION
Resumo:
Polymorphous Si is a nanostructured form of hydrogenated amorphous Si that contains a small fraction of Si nanocrystals or clusters. Its thermally induced transformations such as relaxation, dehydrogenation, and crystallization have been studied by calorimetry and evolved gas analysis as a complementary technique. The observed behavior has been compared to that of conventional hydrogenated amorphous Si and amorphous Si nanoparticles. In the temperature range of our experiments (650700 C), crystallization takes place at almost the same temperature in polymorphous and in amorphous Si. In contrast, dehydrogenation processes reflect the presence of different hydrogen states. The calorimetry and evolved gas analysis thermograms clearly show that polymorphous Si shares hydrogen states of both amorphous Si and Si nanoparticles. Finally, the total energy of the main SiH group present in polymorphous Si has been quantified
Resumo:
We report on the growth of epitaxial YBa2Cu3O7 thin films on X-cut LiNbO3 single crystals. The use of double CeO2/YSZ buffer layers allows a single in-plane orientation of YBa2Cu3O7, and results in superior superconducting properties. In particular, surface resistance Rs values of 1.4 m¿ have been measured at 8 GHz and 65 K. The attainment of such low values of Rs constitutes a key step toward the incorporation of high Tc materials as electrodes in photonic and acoustic devices.
Resumo:
The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.
Resumo:
Electron energy-loss spectroscopy is used to map composition and electronic states in epitaxial La2/3Ca1/3MnO3 films grown on SrTiO3 001 and 110 substrates. It is found that in partially relaxed 110 films cationic composition and valence state of Mn3+/4+ ions are preserved across the film thickness. In contrast, in fully strained 001 films, the Ca/La ratio gradually changes across the film, being La rich at film/substrate interface and La depleted at free surface; Mn valence state changes accordingly. These observations suggest that a strongly orientation-dependent adaptative composition mechanism dominates stress accommodation in manganite films and provides microscopic understanding of their dissimilar magnetic properties.
Resumo:
El presente trabajo trata básicamente del estudio experimental de la cinética decristalización de un polímero, el polietilenglicol, de peso molecular medio 400,introduciendo el estudio del mismo polímero al aumentar su peso molecular, PEG 4.000y PEG 6.000.A partir del estudio cinético se intenta llevar a cabo una modelización del proceso decristalización para los polietilenglicoles estudiados mediante varios métodos diferentesy valorar el ajuste obtenido con los datos experimentales a través de la construcción delos diagramas de transformación T-HR-T para el PEG 400 y T-CR-T para los PEGs4000 y 6000. Por otro lado se intenta conseguir una modelización a partir de unosprogramas informáticos facilitados por la universidad
Resumo:
Experimentally, Ce2O3 films are used to study cerium oxide in its fully or partially reduced state, as present in many applications. We have explored the space of low energy Ce2O3 nanofilms using structure prediction and density functional calculations, yielding more than 30 distinct nanofilm structures. First, our results help to rationalize the roles of thermodynamics and kinetics in the preparation of reduced ceria nanofilms with different bulk crystalline structures (e.g. A-type or bixbyite) depending on the support used. Second, we predict a novel, as yet experimentally unresolved, nanofilm which has a structure that does not correspond to any previously reported bulk A2B3 phase and which has an energetic stability between that of A-type and bixbyite. To assist identification and fabrication of this new Ce2O3 nanofilm we calculate some observable properties and propose supports for its epitaxial growth.
Resumo:
En este trabajo se ha estudiado por difracción de rayos X y MEB -I- EDX la nucleación de cinco muestras de vidrios, obtenidos a partir de rocas basálticas de Cataluña. Las diferentes fases obtenidas al nuclear los vidrios sometiéndolos a distintas temperaturas, entre 680° y 770°C, y tiempos entre media y ocho horas, fueron magnetita, clinopiroxeno y plagioclasa. La evolución de estas fases con la variación de las condiciones de tratamiento fue estudiada mediante la realización de gráficas I/t para cada temperatura, donde se aprecia la variación de la intensidad de difracción de las principales reflexiones producidas por estos minerales con el tiempo de tratamiento térmico. En ellas se observa que la nucleación empieza a partir de los 700° C y, después de un cierto tiempo que varía según la temperatura de tratamiento, llamado tiempo de inducción, en el cual el aumento de la nucleación con el tiempo es débil, se incrementa más rápidamente la proporción de las diferentes fases minerales con la duración del tratamiento hasta llegar a una estabilización que se produce a partir de las seis horas. La observación de estas muestras al microscopio electrónico de barrido permitió ver que aparece una microestructura homogéneamente distribuida en las muestras tratadas a partir de los 700°C en la que se distinguen dos fases ricas en Fe y Ti inmersas en una matriz. La fase clara es rica en Mg y pobre en Na y la otra, oscura, al revés. Los microanálisis químicos de dichas fases han sido realizados mediante EDX.
Resumo:
Se pone de manifiesto la idoneidad de la técnica de calorimetría diferencial de barrido para la caracterización de materiales. Se presentan ejemplos específicos de aplicación de dicha técnica en el estudio de los fenómenos ligados a la transición vitrea y cinética de cristalización de vidrios calcogenuros y metálicos así como en el estudio de la reordenación de fases desordenadas metastables.
Resumo:
The properties of water can have a strong dependence on the confinement. Here, we consider a water monolayer nanoconfined between hydrophobic parallel walls under conditions that prevent its crystallization. We investigate, by simulations of a many-body coarse-grained water model, how the properties of the liquid are affected by the confinement. We show, by studying the response functions and the correlation length and by performing finite-size scaling of the appropriate order parameter, that at low temperature the monolayer undergoes a liquid-liquid phase transition ending in a critical point in the universality class of the two-dimensional (2D) Ising model. Surprisingly, by reducing the linear size L of the walls, keeping the walls separation h constant, we find a 2D-3D crossover for the universality class of the liquid-liquid critical point for L/h=~50, i.e. for a monolayer thickness that is small compared to its extension. This result is drastically different from what is reported for simple liquids, where the crossover occurs for , and is consistent with experimental results and atomistic simulations. We shed light on these findings showing that they are a consequence of the strong cooperativity and the low coordination number of the hydrogen bond network that characterizes water.
Resumo:
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si