Estudi de la coautoria de publicacions científiques entre UPC i nou universitats dels Estats Units: Brown University, University of Chicago, Northwestern University, Stanford University, Columbia University, Cornell University, Harvard University, Princeton University i Duke University

S'analitza la coautoria de la UPC amb autors vinculats a institucions acadèmiques dels Estats Units, per totes les àrees temàtiques i sense considerar límits cronològics o documentals.

Estudi de la coautoria de publicacions científiques entre UPC i cinc universitats dels Estats Units : Caltech, Stanford University, UC Davis, UC Irvine i UCLA

S'analitza la coautoria de la UPC amb autors vinculats a institucions acadèmiques dels Estats Units, per totes les àrees temàtiques, de gener de 2009 a juny de 2014.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain