Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

Caracterizacion por difraccion de rayos-X, analisis termico y espectroscopia Raman de los cristales mixtos Li(NH4)(1-x)KxSO4

En este trabajo se estudia la preparació n y caracterizació n de las fases de los cristales mixtos de f órmula Li(NH4)1-xKxSO4. La caracterizacói n se ha efectuado por aná lisis té rmico con DSC y ATD, difracci ón de rayos-X sobre polvo cristalino con temperatura variable, difracci n de rayos-X sobre muestra monocristalina a temperatura variable a fin de determina su estructura cristalina y por espectroscop"a Raman a temperatura variable. Se han obtenido dos tipos de fases. Una soluci n s lida con 0.94 < x < 1 que presenta los mismos tipos estructurales que el LiKSO4, pero seg n el m todo de cristalizaci n pueden aparecer nuevas fases que no presenta el LiKSO4. El segundo tipo de compuesto tiene por f rmula Li(NH4)0.53K0.47SO4, el cual presenta una estructura hexagonal con par metro a » 3 aLiKSO4. Este compuesto tiene por encima de la temperatura ambiente una sola transici n a 463K.

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si