De la industrialització de les comarques de Girona al vapor Burés

Aquest article vol mostrar que la industrialització de Catalunya també va ser important a les comarques properes a la ciutat de Girona, especialment a la vall d’Anglès, ja que en aquesta població es conserva el vapor Burés, una màquina de vapor del principi del segle XX en molt bon estat. L'article es presenta en un to divulgador amb ànim de provocar anàlisis mes rigoroses dels temes tractats. En aquest sentit, l'apartat de la descripció tècnica del vapor Burés pretén estimular el seu estudi amb mes profunditat. Finalment, es fan un seguit de propostes, des de ben simples fins a mes agosarades, que caldria tenir en compte per avançar en una bona proposta d'ús públic dels elements patrimonials relacionats amb el vapor Burés

Deposición transversal de líquido de las boquillas de doble abanico TTJ60-11004 y TTJ60-11002 en distintas condiciones operacionales

El objetivo de este trabajo fue el de evaluar la deposición transversal de caldo de las boquillas pulverizadoras de doble abanico TTJ60-11004 y TTJ60-11002 en distintas condiciones operacionales. Se utilizaron 5 muestras de cada boquilla pulverizadora siendo considerada cada unidad, una repetición. La distribución de caldo fue evaluada por medio de una mesa de evaluación de distribución construida de acuerdo con la norma ISO 56821. Se evaluó el perfil de distribución individual, la distribución volumétrica simulada de la superposición de los chorros por medio del coeficiente de variación (CV%) de los volúmenes colectados, el caudal y el ángulo de abertura de los chorros. Las condiciones operacionales fueron: presión de trabajo de 200, 300 y 400 Kpa, altura de 30, 40 y 50 cm en relación al blanco y espaciamiento entre boquillas simulados en Software (Microsoft Excel) entre 45 y 100 cm. Las boquillas presentaron perfil individual descontinuo con la mayor deposición de líquido en la región central y reducción del volumen gradual en dirección a las extremidades. El aumento de la presión promovió alargamiento del perfil y de la franja de aplicación. Las boquillas proporcionaron perfil uniforme que dependió del espaciamiento entre las boquillas, con valores menores con reducción en el espaciamiento y en presiones mayores. El caudal y el ángulo del chorro aumentaron con el incremento en la presión.

Distribuição de líquido da ponta de pulverização com indução de ar e jato excêntrico AIUB 8502 sob diferentes condições

Objetivou-se com este trabalho avaliar a distribuição de líquido da ponta de pulverização com indução de ar e jato excêntrico AIUB 8502 sob diferentes condições operacionais. Foram avaliados perfil individual, vazão, ângulo de abertura do jato, faixa de aplicação e distribuição volumétrica simulada de duas pontas AIUB 8502 nas pressões de trabalho de 200, 300, 400 e 500 kPa, altura de 30, 40 e 50 cm em relação ao alvo e espaçamento entre pontas de 30 a 100 cm. Todas as análises foram realizadas seguindo a norma ISSO 5682-1, com algumas adaptações. A ponta apresentou distribuição de líquido excêntrica com um lado descontínuo e extremidade oposta excêntrica, com queda abrupta do volume de líquido. À medida que se aumentou a altura da barra e a pressão de trabalho, alongou-se o perfil do jato. O maior número de configurações uniformes foi obtido na altura de 50 cm, decrescendo nas alturas de 40 e 30 cm. A vazão e o ângulo do jato excêntrico aumentaram com o incremento na pressão, não havendo diferença entre o ângulo do jato descontínuo e o total entre as pressões de 400 e 500 kPa e de 200 e 300 kPa.

SiC-Based MIS gas sensor for high water vapor environments

In this work we will prove that SiC-based MIS capacitors can work in environments with extremely high concentrations of water vapor and still be sensitive to hydrogen, CO and hydrocarbons, making these devices suitable for monitoring the exhaust gases of hydrogen or hydrocarbons based fuel cells. Under the harshest conditions (45% of water vapor by volume ratio to nitrogen), Pt/TaOx/SiO2/SiC MIS capacitors are able to detect the presence of 1 ppm of hydrogen, 2 ppm of CO, 100 ppm of ethane or 20 ppm of ethene, concentrations that are far below the legal permissible exposure limits.

Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition

The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature