Linear relation between deuteron matter radius and the scattering length

We explain the empirical linear relations between the triplet scattering length, or the asymptotic normalization constant, and the deuteron matter radius using the effective range expansion in a manner similar to a recent paper by Bhaduri et al. We emphasize the corrections due to the finite force range and to shape dependence. The discrepancy between the experimental values and the empirical line shows the need for a larger value of the wound extension, a parameter which we introduce here. Short-distance nonlocality of the n-p interaction is a plausible explanation for the discrepancy.

Device for simultaneous measurement of the Peltier and Seebeck coefficients verification of the Kelvin relation

We have designed and built an experimental device, which we called a "thermoelectric bridge." Its primary purpose is simultaneous measurement of the relative Peltier and Seebeck coefficients. The systematic errors for both coefficients are equal with this device and manipulation is not necessary between the measurement of one coefficient and the other. Thus, this device is especially suitable for verifying their linear relation postulated by Lord Kelvin. Also, simultaneous measurement of thermal conductivity is described in the text. A sample is made up of the couple nickel¿platinum, taking measurements in the range of ¿20¿60°C and establishing the dependence of each coefficient with temperature, with nearly equal random errors ±0.2%, and systematic errors estimated at ¿0.5%. The aforementioned Kelvin relation is verified in this range from these results, proving that the behavioral deviations are ¿0.3% contained in the uncertainty ±0.5% caused by the propagation of errors

Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors

By an analysis of the exchange of carriers through a semiconductor junction, a general relationship for the nonequilibrium population of the interface states in Schottky barrier diodes has been derived. Based on this relationship, an analytical expression for the ideality factor valid in the whole range of applied bias has been given. This quantity exhibits two different behaviours depending on the value of the applied bias with respect to a critical voltage. This voltage, which depends on the properties of the interfacial layer, constitutes a new parameter to complete the characterization of these junctions. A simple interpretation of the different behaviours of the ideality factor has been given in terms of the nonequilibrium charging properties of interface states, which in turn explains why apparently different approaches have given rise to similar results. Finally, the relevance of our results has been considered on the determination of the density of interface states from nonideal current-voltage characteristics and in the evaluation of the effects of the interfacial layer thickness in metal-insulator-semiconductor tunnelling diodes.