Quasi real-time Raman studies on the growth of Cu-In-S thin films

In this work annealing and growth of CuInS2 thin films is investigated with quasireal-time in situ Raman spectroscopy. During the annealing a shift of the Raman A1 mode towards lower wave numbers with increasing temperature is observed. A linear temperature dependence of the phonon branch of ¿2 cm¿1/100 K is evaluated. The investigation of the growth process (sulfurization of metallic precursors) with high surface sensitivity reveals the occurrence of phases which are not detected with bulk sensitive methods. This allows a detailed insight in the formation of the CuInS2 phases. Independent from stoichiometry and doping of the starting precursors the CuAu ordering of CuInS2 initially forms as the dominating ordering. The transformation of the CuAu ordering into the chalcopyrite one is, in contrast, strongly dependent on the precursor composition and requires high temperatures.

Diradicals acting through diamagnetic phenylene vinylene bridges: Raman spectroscopy as a probe to characterize spin delocalization

We present a complete Raman spectroscopic study in two structurally well-defined diradical species of different lengths incorporating oligo p-phenylene vinylene bridges between two polychlorinated triphenylmethyl radical units, a disposition that allows sizeable conjugation between the two radicals through and with the bridge. The spectroscopic data are interpreted and supported by quantum chemical calculations. We focus the attention on the Raman frequency changes, interpretable in terms of: (i) bridge length (conjugation length); (ii) bridge conformational structure; and (iii) electronic coupling between the terminal radical units with the bridge and through the bridge, which could delineate through-bond spin polarization, or spin delocalization. These items are addressed by using the"oligomer approach" in conjunction with pressure and temperature dependent Raman spectroscopic data. In summary, we have attempted to translate the well-known strategy to study the electron (charge) structure of π−conjugated molecules by Raman spectroscopy to the case of electron (spin) interactions via the spin delocalization mechanism.

Caracterizacion por difraccion de rayos-X, analisis termico y espectroscopia Raman de los cristales mixtos Li(NH4)(1-x)KxSO4

En este trabajo se estudia la preparació n y caracterizació n de las fases de los cristales mixtos de f órmula Li(NH4)1-xKxSO4. La caracterizacói n se ha efectuado por aná lisis té rmico con DSC y ATD, difracci ón de rayos-X sobre polvo cristalino con temperatura variable, difracci n de rayos-X sobre muestra monocristalina a temperatura variable a fin de determina su estructura cristalina y por espectroscop"a Raman a temperatura variable. Se han obtenido dos tipos de fases. Una soluci n s lida con 0.94 < x < 1 que presenta los mismos tipos estructurales que el LiKSO4, pero seg n el m todo de cristalizaci n pueden aparecer nuevas fases que no presenta el LiKSO4. El segundo tipo de compuesto tiene por f rmula Li(NH4)0.53K0.47SO4, el cual presenta una estructura hexagonal con par metro a » 3 aLiKSO4. Este compuesto tiene por encima de la temperatura ambiente una sola transici n a 463K.

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si