Tectonic-palaeoenvironmental forcing of clay-mineral assemblages in nonmarine settings: the Oligocene-Miocene As Pontes Basin (Spain)

Two small, alluvial-lacustrine subbasins developed during the early restraining overstep stages of the Oligocene-Miocene As Pontes strike-slip Basin (NW Spain). Later, the basin evolved into a restraining bend stage and an alluvial-swamp-dominated depositional framework developed. The palaeobiological record demonstrates that the Oligocene-Miocene palaeoclimate in NW Spain was subtropical, warm and humid to subhumid.

Agglomeration vs. dispersion of economic activities in the districts of Paris

The spatial distribution of economic activity has often been analysed for wide geographical areas such as regions or metropolitan areas, but it has rarely been subject to microanalysis, especially outside the U.S. In this paper we focus on what happens within a large European city (Par is), and analyse how the industrial composition of its districts differs and how these districts evolve. We also analyse suburbanization process for both residents and the workforce and provide empirical evidence about the changing roles of the core and intramuros periphery. Keywords: agglomeration, suburbanization, Paris, micropolitan analysis

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si