Entropy change and magnetocaloric effect in Gd5(SixGe1-x)4

Isothermal magnetization curves up to 23 T have been measured in Gd5Si1.8Ge2.2. We show that the values of the entropy change at the first-order magnetostructural transition, obtained from the Clausius-Clapeyron equation and the Maxwell relation, are coincident, provided the Maxwell relation is evaluated only within the transition region and the maximum applied field is high enough to complete the transition. These values are also in agreement with the entropy change obtained from differential scanning calorimetry. We also show that a simple phenomenological model based on the temperature and field dependence of the magnetization accounts for these results.

Magnetic field induced entropy change and magnetoelasticity in Ni-Mn-Ga alloys

The magnetocaloric effect that originates from the martensitic transition in the ferromagnetic Ni-Mn-Gashape-memory alloy is studied. We show that this effect is controlled by the magnetostructural coupling at boththe martensitic variant and magnetic domain length scales. A large entropy change induced by moderatemagnetic fields is obtained for alloys in which the magnetic moment of the two structural phases is not verydifferent. We also show that this entropy change is not associated with the entropy difference between themartensitic and the parent phase arising from the change in the crystallographic structure which has beenfound to be independent of the magnetic field within this range of fields.

Batalin-Vilkovisky analysis of covariant and noncovariant actions

The equivalence between the covariant and the noncovariant versions of a constrained system is shown to hold after quantization in the framework of the field-antifield formalism. Our study covers the cases of electromagnetism and Yang-Mills fields and sheds light on some aspects of the Faddeev-Popov method, for both the covariant and noncovariant approaches, which have not been fully clarified in the literature.

Hysteresis and return-point memory in deterministic cellular automata

We have investigated hysteresis and the return-point memory (RPM) property in deterministic cellular automata with avalanche dynamics. The RPM property reflects a partial ordering of metastable states, preserved by the dynamics. Recently, Sethna et al. [Phys. Rev. Lett. 70, 3347 (1993)] proved this behavior for a homogeneously driven system with static disorder. This Letter shows that the partial ordering and the RPM can be displayed as well by systems driven heterogeneously, as a result of its own evolution dynamics. In particular, we prove the RPM property for a deterministic 2D sandpile automaton driven at a central site.

Measurements of the bulk and interfacial velocity profiles in oscillating Newtonian and Maxwellian fluids

We present the dynamic velocity profiles of a Newtonian fluid (glycerol) and a viscoelastic Maxwell fluid (CPyCl-NaSal in water) driven by an oscillating pressure gradient in a vertical cylindrical pipe. The frequency range explored has been chosen to include the first three resonance peaks of the dynamic permeability of the viscoelastic-fluid¿pipe system. Three different optical measurement techniques have been employed. Laser Doppler anemometry has been used to measure the magnitude of the velocity at the center of the liquid column. Particle image velocimetry and optical deflectometry are used to determine the velocity profiles at the bulk of the liquid column and at the liquid-air interface respectively. The velocity measurements in the bulk are in good agreement with the theoretical predictions of a linear theory. The results, however, show dramatic differences in the dynamic behavior of Newtonian and viscoelastic fluids, and demonstrate the importance of resonance phenomena in viscoelastic fluid flows, biofluids in particular, in confined geometries.

Magnetoelasticity and magnetoresistance in Cu-Al-Mn shape-memory alloys

We study the effect of a magnetic field on the martensitic transition of a Cu-Al-Mn shape-memory alloy. The martensitic transition has been studied through resistance measurements under applied magnetic fields ranging from 0 to 50 kOe. Negative magnetoresistance showing an almost linear dependence with the square of the magnetization has been observed. This magnetoresistive effect is associated with the existence of small ferromagnetic Mn-clusters. Its strength and thermal dependence is different in both phases. The martensitic transition temperature is slightly increased and its spread in temperature significantly reduced upon increasing the field. These results show the existence of magnetoelastic coupling, which favors the nucleation of those martensitic variants with the easy magnetization axis aligned with the field.

Design and construction of precision heat fluxmeters

The possibility of local elastic instabilities is considered in a first¿order structural phase transition, typically a thermoelastic martensitic transformation, with associated interfacial and volumic strain energy. They appear, for instance, as the result of shape change accommodation by simultaneous growth of different crystallographic variants. The treatment is phenomenological and deals with growth in both thermoelastic equilibrium and in nonequilibrium conditions produced by the elastic instability. Scaling of the transformed fraction curves against temperature is predicted only in the case of purely thermoelastic growth. The role of the transformation latent heat on the relaxation kinetics is also considered, and it is shown that it tends to increase the characteristic relaxation times as adiabatic conditions are approached, by keeping the system closer to a constant temperature. The analysis also reveals that the energy dissipated in the relaxation process has a double origin: release of elastic energy Wi and entropy production Si. The latter is shown to depend on both temperature rate and thermal conduction in the system.

Perturbation theory and locality in the Field-Antifield formalism

The BatalinVilkovisky formalism is studied in the framework of perturbation theory by analyzing the antibracket BecchiRouetStoraTyutin (BRST) cohomology of the proper solution S0. It is concluded that the recursive equations for the complete proper solution S can be solved at any order of perturbation theory. If certain conditions on the classical action and on the gauge generators are imposed the solution can be taken local.

Critical Behavior and Axis Defining Symmetry Breaking in Hydra Embryonic Development

The formation of a hollow cellular sphere is often one of the first steps of multicellular embryonic development. In the case of Hydra, the sphere breaks its initial symmetry to form a foot-head axis. During this process a gene, ks1, is increasingly expressed in localized cell domains whose size distribution becomes scale-free at the axis-locking moment. We show that a physical model based solely on the production and exchange of ks1-promoting factors among neighboring cells robustly reproduces the scaling behavior as well as the experimentally observed spontaneous and temperature-directed symmetry breaking.

Model-independent bounds for the potential and kinetic energy of liquid 4He at zero temperature

Using the experimental values of the chemical potentials of liquid 4He and of a 3He impurity in liquid 4He, we derive a model-independent lower (upper) bound to the kinetic (potential) energy per particle at zero temperature. The values of the bounds at the experimental saturation density are 13.42 K for the kinetic energy and -20.59 K for the potential energy. All the theoretical calculations based on the Lennard-Jones potential violate the upper-bound condition for the potential energy.

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).

Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450°C was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films.