143 resultados para Magnetism in Amorphous Alloys


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We compute the shift in the frequency of the spin resonance in a solid that rotates in the field of a circularly polarized electromagnetic wave. Electron-spin resonance, nuclear magnetic resonance, and ferromagnetic resonance are considered. We show that contrary to the case of the rotating LC circuit, the shift in the frequency of the spin resonance has strong dependence on the symmetry of the receiver. The shift due to rotation occurs only when rotational symmetry is broken by the anisotropy of the gyromagnetic tensor, by the shape of the body or by magnetocrystalline anisotropy. General expressions for the resonance frequency and power absorption are derived and implications for experiment are discussed.

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This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.

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Materials science is a multidisciplinary research topic related to the development of physics and technology. Mechanical alloying of ribbon flakes is a two steps route to develop advanced materials. In this work, a Fe based alloy was obtained using three pathways: mechanical alloying, melt-spinning and mechanical alloying of previously melt-spun samples. Processing conditions allow us to obtain amorphous or nanocrystalline structures. Furthermore, a bibliographic revision of mechanical alloying is here presented

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Corrosion reduces the lifetime of municipal solid waste incineration (MSWI) superheater tubes more than any other cause. It can be minimized by the careful selection of those materials that are most resistant to corrosion under operating conditions. Since thousands of different materials are already known and many more are developed every year, here the selection methodology developed by Prof. Ashby of the University of Cambridge was used to evaluate the performance of different materials to be used as MSWI superheater tubes. The proposed materials can operate at steam pressures and temperatures over 40 bars and 400ºC, respectively. Two case studies are presented: one makes a balanced selection between mechanical properties and cost per thermal unit; and the other focuses on increasing tube lifetime. The balanced selection showed that AISI 410 martensitic stainless steel (wrought, hard tempered) is the best candidate with a good combination of corrosion resistance, a relatively low price (0.83-0.92 e/kg) and a good thermal conductivity (23-27 W/m K). Meanwhile, Nitronic 50/XM-19 stainless steel is the most promising candidate for longterm selection, as it presents high corrosion resistance with a relatively low price (4.86-5.14 e/kg) compared to Ni-alloys.

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Using a Ginzburg-Landau model for the magnetic degrees of freedom with coupling to disorder, we demonstrate through simulations the existence of stripelike magnetic precursors recently observed in Co-Ni-Al alloys above the Curie temperature. We characterize these magnetic modulations by means of the temperature dependence of local magnetization distribution, magnetized volume fraction, and magnetic susceptibility. We also obtain a temperature-disorder strength phase diagram in which a magnetic tweed phase exists in a small region between the paramagnetic and dipolar phases.

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Based on experimental observations of modulated magnetic patterns in a Co0.5Ni0.205Ga0.295 alloy, we propose a model to describe a (purely) magnetic tweed and a magnetoelastic tweed. The former arises above the Curie (or Nel) temperature due to magnetic disorder. The latter results from compositional fluctuations coupling to strain and then to magnetism through the magnetoelastic interaction above the structural transition temperature. We discuss the origin of purely magnetic and magnetoelastic precursor modulations and their experimental thermodynamic signatures.

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High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500°C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline ßSiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.

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A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si