Síntesi de nanopartícules de TiO2 fàcilment processables i el seu ús per a fabricar a baixa temperatura cel·les solars sensibilitzades

La gran demanda energètica i la problemàtica dels combustibles fòssils i d‟altres recursos per a obtenir energia posen de manifest la necessitat de desenvolupar tecnologies netes, sostenibles i econòmicament viables de generació d‟energia. En aquest àmbit, les cel·les solars sensibilitzades amb colorant (Dye Sensitized Solar Cells, DSSC), que transformen l‟energia solar a energia elèctrica, són una solució factible. A més, el desenvolupament de mètodes per a construir aquestes cel·les a baixa temperatura permetria fabricar-les sobre substrats plàstics, fet que els donaria un valor afegit i permetria una producció en continu, ràpida i amb baix cost tant, econòmic, com d‟impacte ambiental. Aquest treball presenta el desenvolupament d‟un mètode de producció a baixa temperatura (140 ºC) de DSSC, amb eficiència de 5,9 % sobre substrats FTO/vidre. Aquest valor és superior a la majoria de les eficiències reportades a la bibliografia de DSSC construïdes a baixa temperatura. Les capes mesoporoses que formen els elèctrodes de les DCCS es dipositen per doctor blade a partir d‟una pasta composta per nanopartícules de TiO2, de 4-8 nm, recobertes d‟àcid 3,6,9-trioxadecanoic, per nanopartícules de Degussa P25, de 20-25 nm, i com a dissolvents només s‟utilitza aigua i etanol. L‟aplicació d‟un tractament a 140 ºC permet eliminar la matèria orgànica de la superfície de les nanopartícules de 4-8 nm i unir-les a les de Degussa P25. Aquest fet permet obtenir capes mesoporoses sinteritzades de 6 μm de gruix. A més, l‟aplicació d‟un post-tractament, en el qual s‟utilitza l‟àcid hexafluoro titànic (IV), produeix un lleuger increment en l‟eficiència. Endemés, l‟obtenció de capes primes de TiO2 sobre substrats plàstics és un tema d‟actualitat a causa de la falta de mètodes de deposició a baixa temperatura. En aquest context, s‟ha sintetitzat, mitjançant processos respectuosos amb el medi ambient nanopartícules de TiO2 cristal·lí modificades superficialment amb lauril gal·lat i àcid 3,6,9-trioxodecanoic. Les nanopartícules poden ser dispersades en dissolvents orgànics i aigua respectivament, fet que permet obtenir suspensions estables i de fàcil manipulació. Aquestes poden ser utilitzades com a precursores per a obtenir capes primes a baixa temperatura de TiO2 cristal·lí. En concret, les capes primes formades per nanopartícules de TiO2 modificades amb àcid 3,6,9-trioxodecanoic s‟han utilitzat com a blocking layer en les DSSC construïdes a baixa temperatura.

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells

An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance.

Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000 nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the μc-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the μc-Si:H layer, mainly at long wavelengths, to be quantified.

Optical analysis of textured plastic substrates to be used in thin silicon solar cells

Light confinement strategies in thin-film silicon solar cells play a crucial role in the performance of the devices. In this work, the possible use of Ag-coated stamped polymers as reflectors to be used in n-i-p solar cells is studied. Different random roughnesses (nanometer and micrometer size) have been transferred on poly(methylmethacrylate) (PMMA) by hot embossing. Morphological and optical analyses of masters, stamped polymers and reflectors have been carried out evidencing a positive surface transference on the polymer and the viability of a further application in solar cells.

Protein oligomers studied by solid-state NMR the case of the full-length nucleoid-associated protein histone-like nucleoid structuring protein

Members of the histone-like nucleoid structuring protein (H-NS) family play roles both as architectural proteins and as modulators of gene expression in Gram-negative bacteria. The H-NS protein participates in modulatory processes that respond to environmental changes in osmolarity, pH, or temperature. H-NS oligomerization is essential for its activity. Structural models of different truncated forms are available. However, high-resolution structural details of full-length H-NS and its DNA-bound state have largely remained elusive. We report on progress in characterizing the biologically active H-NS oligomers with solid-state NMR. We compared uniformly ((13)C,(15)N)-labeled ssNMR preparations of the isolated N-terminal region (H-NS 1-47) and full-length H-NS (H-NS 1-137). In both cases, we obtained ssNMR spectra of good quality and characteristic of well-folded proteins. Analysis of the results of 2D and 3D (13)C-(13)C and (15)N-(13)C correlation experiments conducted at high magnetic field led to assignments of residues located in different topological regions of the free full-length H-NS. These findings confirm that the structure of the N-terminal dimerization domain is conserved in the oligomeric full-length protein. Small changes in the dimerization interface suggested by localized chemical shift variations between solution and solid-state spectra may be relevant for DNA recoginition.

Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD

In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125 °C. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen.

Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.

Muntatge i caracterització d'una placa DSSC: Buscant potència

Treball de recerca realitzat per alumnes d'ensenyament secundari i guardonat amb un Premi CIRIT per fomentar l'esperit científic del Jovent l'any 2009. Els objectius inicials foren la construcció d una 'Cèl•lula Solar Sensibilitzada mitjançant un Colorant’ (DSSC) amb el tint d una col llombarda i posterior caracterització segons el dossier 'Nanocrystalline Solar Cell Kit: Recreating Photosynthesis’. Les DSSC (Dye Sensitized Solar Cell) són un tipus de cèl•lules que imiten els principis que la fotosíntesis ha fet servir exitosament durant més de 3,5 bilions d anys. S’han construït algunes DSSC i se n’ha provat la seva eficiència. El seu funcionament es basa en l’energia d’un fotó que excita un electró i el fa saltar de nivell energètic fins que es desprèn de l’àtom de colorant, deixant un forat en la molècula. Aquest electró lliure passa a través de la capa de TiO2 fins arribar a la càrrega on es genera el corrent elèctric. Tot seguit, l’electró arriba al contra-elèctrode i és aquí on entra en contacte amb l’electròlit, el mediador iode/triiode. Aquest regenera l’electró, que anteriorment ha saltat del colorant, oxidant-se ell mateix.

1.84 micron emission of Tm3+ sensitized by Yb3+ ions in monoclinic KGd(WO4)2 single crystals

By exciting at 940 nm, we have characterized the 1.84 m near infrared emission of trivalent thulium ions in Yb3+, Tm3+:KGd WO4 2 single crystals as a function of the dopant concentration and temperature, from 10 K to room temperature. An overall 3H6 Stark splitting of 470 cm−1 for the Tm3+ ions in the Yb3+, Tm3+:KGd WO4 2 was obtained. We also studied the blue emission at 476 nm Tm3+ and the near infrared emissions at 1.48 m Tm3+ and 1 m Yb3+ as a function of the dopant concentration. Experimental decay times of the 1G4, 3H4, and 3F4 Tm3+ and 2F5/2 Yb3+ excited states have been measured as a function of Yb3+ and Tm3+ ion concentrations. For the 3F4 →3H6 transition of Tm3+ ions, we used the reciprocity method to calculate the maximum emission cross section of 3.07 10−20 cm2 at 1.84 m for the polarization parallel to the Nm principal optical direction.

L'energia solar fotovoltaica

Treball de recerca realitzat per alumnes d'ensenyament secundari i guardonat amb un Premi CIRIT per fomentar l'esperit cientí­fic del Jovent l'any 2009. Després d'una breu introducció sobre l'energia solar, l'estudi analitza quin és el procés de fabricació que se segueix per fer les plaques solars fotovoltaiques policristal·lines i monocristal·lines i quin és el seu funcionament. És a dir, com és possible obtenir energia elèctrica gràcies a la llum del Sol. També es descriuen les instal·lacions autònomes i les connectades a la xarxa, així com els elements que les integren. S'inclou, a més, un punt explicant quins són els factors que condicionen l'obtenció d'energia i els avenços més recents en aquest camp de la tecnologia. Per finalitzar la part teòrica, s'analitza una instal·lació fotovoltaica situada a Cervera i la seva producció. Pel que fa al treball de camp, es va construir un seguidor solar.

Silicon nanocrystals as an enabling material for silicon Ppotonics

Silicon nanocrystals (Si-nc) is an enabling material for silicon photonics, which is no longer an emerging field of research but an available technology with the first commercial products available on the market. In this paper, properties and applications of Si-nc in silicon photonics are reviewed. After a brief history of silicon photonics, the limitations of silicon as a light emitter are discussed and the strategies to overcome them are briefly treated, with particular attention to the recent achievements. Emphasis is given to the visible optical gain properties of Si-nc and to its sensitization effect on Er ions to achieve infrared light amplification. The state of the art of Si-nc applied in a few photonic components is reviewed and discussed. The possibility to exploit Si-nc for solar cells is also presented. in addition, nonlinear optical effects, which enable fast all-optical switches, are described.

Semiclassical image potential at a solid surface

A surface dielectric function of a semi-infinite plane-bounded metal is defined in the spirit of the plasmon-pole dielectric function of the bulk. It is modeled in such a way that the surface-plasmon dispersion relation is recovered for small momentum transfer. This function is employed to compute the image potential at all distances outside the surface. Interaction with bulk modes is neglected for simplicity and clarity. The interaction of a massive point charge with a metal surface is also considered in the context of a boson model for surface-plasmon excitation. We present a new definition of the image potential for this case.