9 resultados para resistivity


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Dissertação para obtenção do Grau de Mestre em Engenharia Geológica (Georrecursos)

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Shape Memory Alloy (SMA) Ni-Ti films have attracted much interest as functional and smart materials due to their unique properties. However, there are still important issues unresolved like formation of film texture and its control as well as substrate effects. Thus, the main challenge is not only the control of the microstructure, including stoichiometry and precipitates, but also the identification and control of the preferential orientation since it is a crucial factor in determining the shape memory behaviour. The aim of this PhD thesis is to study the optimisation of the deposition conditions of films of Ni-Ti in order to obtain the material fully crystallized at the end of the deposition, and to establish a clear relationship between the substrates and texture development. In order to achieve this objective, a two-magnetron sputter deposition chamber has been used allowing to heat and to apply a bias voltage to the substrate. It can be mounted into the six-circle diffractometer of the Rossendorf Beamline (ROBL) at the European Synchrotron Radiation Facility (ESRF), Grenoble, France, enabling an in-situ characterization by X-ray diffraction(XRD) of the films during their growth and annealing. The in-situ studies enable us to identify the different steps of the structural evolution during deposition with a set of parameters as well as to evaluate the effect of changing parameters on the structural characteristics of the deposited film. Besides the in-situ studies, other complementary ex-situ characterization techniques such as XRD at a laboratory source, Rutherford backscattering spectroscopy(RBS), Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (X-TEM), scanning electron microscopy (SEM), and electrical resistivity (ER) measurements during temperature cycling have been used for a fine structural characterization. In this study, mainly naturally and thermally oxidized Si(100) substrates, TiN buffer layers with different thicknesses (i.e. the TiN topmost layer crystallographic orientation is thickness dependent) and MgO(100) single crystals were used as substrates. The chosen experimental procedure led to a controlled composition and preferential orientation of the films. The type of substrate plays an important role for the texture of the sputtered Ni-Ti films and according to the ER results, the distinct crystallographic orientations of the Ni-Ti films influence their phase transformation characteristics.

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Journal of Applied Physics, Vol. 96, nº3

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Vacuum, Vol. 64

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O desenvolvimento de novos materiais e a sua caracterização é de extrema importância no dimensionamento e construção de equipamentos criogénicos. A empresa Versarien desenvolveu uma técnica capaz de produzir cobre poroso, conseguindo controlar a porosidade e o tamanho de poros. Os materiais porosos são de especial interesse para dispositivos criogénicos em aplicações espaciais. Um exemplo desta aplicação são as unidades de armazenamento de energia (Energy Storage Units-ESU), onde um material poroso é usado em ausência de gravidade para reter um líquido criogénico por capilaridade, de modo a manter dispositivos a uma temperatura baixa e constante. Neste caso, um material poroso de elevada condutividade térmica, como o cobre, seria de grande interesse uma vez que permite obter uma boa homogeneidade de temperatura na célula. Neste trabalho foi desenvolvido um sistema para medir a condutividade térmica deste material, entre 15 e 260 K, para porosidades entre 50% e 80%, utilizando um criorrefrigerador 2 W @ 20 K. Estas medições permitiram determinar que a pureza do cobre poroso se encontra entre RRR20 (RRR: Residual-resistivity ratio) e RRR10, apresentando uma tortuosidade que se encontra de acordo com um modelo simples descrito nesta dissertação. Foi ainda desenhado, construído e testado um criostato portátil, que apenas necessita de azoto líquido e de bombeamento primário para que se possam realizar medições de condutividade térmica entre 77 e 300 K.

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The present dissertation focuses on the research of the recent approach of innovative high-temperature superconducting stacked tapes in electrical ma-chines applications, taking into account their potential benefits as an alternative for the massive superconducting bulks, mainly related with geometric and me-chanical flexibility. This work was developed in collaboration with Institut de Ciència de Ma-terials de Barcelona (ICMAB), and is related with evaluation of electrical and magnetic properties of the mentioned superconducting materials, namely: analysis of magnetization of a bulk sample through simulations carried out in the finite elements COMSOL software; measurement of superconducting tape resistivity at liquid nitrogen and room temperatures; and, finally, development and testing of a frequency controlled superconducting motor with rotor built by superconducting tapes. In the superconducting state, results showed a critical current density of 140.3 MA/m2 (or current of 51.15 A) on the tape and a 1 N∙m developed motor torque, independent from the rotor position angle, typical in hysteresis motors.

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In this work, cellulose-based electro and ionic conductive composites were developed for application in cellulose based printed electronics. Electroconductive inks were successfully formulated for screen-printing using carbon fibers (CFs) and multi-walled carbon nanotubes (MWCNTs) as conductive functional material and cellulose derivatives working as binder. The formulated inks were used to fabricate conductive flexible and disposable electrodes on paper-based substrates. Interesting results were obtained after 10 printing passes and drying at RT of the ink with 10 % wt. of pristine CFs and 3% wt. of carboxymethyl cellulose (CMC), exhibiting a resistivity of 1.03 Ωcm and a resolution of 400 μm. Also, a resistivity of 0.57 Ωcm was obtained for only one printing pass using an ink based on 0.5 % wt. MWCNTs and 3 % wt. CMC. It was also demonstrated that ionic conductive cellulose matrix hydrogel can be used in electrolyte-gated transistors (EGTs). The electrolytes revealed a double layer capacitance of 12.10 μFcm-2 and ionic conductivity of 3.56x10-7 Scm-1. EGTs with a planar configuration, using sputtered GIZO as semiconducting layer, reached an ON/OFF ratio of 3.47x105, a VON of 0.2 V and a charge carrier mobility of 2.32 cm2V-1s-1.

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Transparent conducting oxides (TCOs) have been largely used in the optoelectronic industry due to their singular combination of low electrical resistivity and high optical transmittance. They are usually deposited by magnetron sputtering systems being applied in several devices, specifically thin film solar cells (TFSCs). Sputtering targets are crucial components of the sputtering process, with many of the sputtered films properties dependent on the targets characteristics. The present thesis focuses on the development of high quality conductive Al-doped ZnO (AZO) ceramic sputtering targets based on nanostructured powders produced by emulsion detonation synthesis method (EDSM), and their application as a TCO. In this sense, the influence of several processing parameters was investigated from the targets raw-materials synthesis to the application of sputtered films in optoelectronic devices. The optimized manufactured AZO targets present a final density above 99 % with controlled grain size, an homogeneous microstructure with a well dispersed ZnAl2O4 spinel phase, and electrical resistivities of ~4 × 10-4 Ωcm independently on the Al-doping level among 0.5 and 2.0 wt. % Al2O3. Sintering conditions proved to have a great influence on the properties of the targets and their performance as a sputtering target. It was demonstrated that both deposition process and final properties of the films are related with the targets characteristics, which in turn depends on the initial powder properties. In parallel, the influence of several deposition parameters in the film´s properties sputtered from these targets was investigated. The sputtered AZO TCOs showed electrical properties at room temperature that are superior to simple oxides and comparable to a reference TCO – indium tin oxide (ITO), namely low electrical resistivity of 5.45 × 10-4 Ωcm, high carrier mobility (29.4 cm2V-1s-1), and high charge carrier concentration (3.97 × 1020 cm-3), and also average transmittance in the visible region > 80 %. These superior properties allowed their successful application in different optoelectronic devices.