25 resultados para TIN OXIDE
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Transparent conducting oxides (TCOs) have been largely used in the optoelectronic industry due to their singular combination of low electrical resistivity and high optical transmittance. They are usually deposited by magnetron sputtering systems being applied in several devices, specifically thin film solar cells (TFSCs). Sputtering targets are crucial components of the sputtering process, with many of the sputtered films properties dependent on the targets characteristics. The present thesis focuses on the development of high quality conductive Al-doped ZnO (AZO) ceramic sputtering targets based on nanostructured powders produced by emulsion detonation synthesis method (EDSM), and their application as a TCO. In this sense, the influence of several processing parameters was investigated from the targets raw-materials synthesis to the application of sputtered films in optoelectronic devices. The optimized manufactured AZO targets present a final density above 99 % with controlled grain size, an homogeneous microstructure with a well dispersed ZnAl2O4 spinel phase, and electrical resistivities of ~4 × 10-4 Ωcm independently on the Al-doping level among 0.5 and 2.0 wt. % Al2O3. Sintering conditions proved to have a great influence on the properties of the targets and their performance as a sputtering target. It was demonstrated that both deposition process and final properties of the films are related with the targets characteristics, which in turn depends on the initial powder properties. In parallel, the influence of several deposition parameters in the film´s properties sputtered from these targets was investigated. The sputtered AZO TCOs showed electrical properties at room temperature that are superior to simple oxides and comparable to a reference TCO – indium tin oxide (ITO), namely low electrical resistivity of 5.45 × 10-4 Ωcm, high carrier mobility (29.4 cm2V-1s-1), and high charge carrier concentration (3.97 × 1020 cm-3), and also average transmittance in the visible region > 80 %. These superior properties allowed their successful application in different optoelectronic devices.
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Conservação e Restauro,Área de especialização Cerâmica e Vidro
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Dissertação para obtenção do Grau de Doutor em Química
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This work documents the deposition and optimization of semiconductor thin films using chemical spray coating technique (CSC) for application on thin-film transistors (TFTs), with a low-cost, simple method. CSC setup was implemented and explored for industrial application, within Holst Centre, an R&D center in the Netherlands. As zinc oxide had already been studied within the organization, it was used as a standard material in the initial experiments, obtaining typical mobility values of 0.14 cm2/(V.s) for unpatterned TFTs. Then, oxide X layer characteristics were compared for films deposited with CSC at 40°C and spin-coating. The mobility of the spin-coated TFTs was 103 cm2/(V.s) higher, presumably due to the lack of uniformity of spray-coated film at such low temperatures. Lastly, tin sulfide, a relatively unexplored material, was deposited by CSC in order to obtain functional TFTs and explore the device’s potential for working as a phototransistor. Despite the low mobilities of the devices, a sensitive photodetector was made, showing drain current variation of nearly one order of magnitude under yellow light. CSC technique’s simplicity and versatility was confirmed, as three different semiconductors were successfully implemented into functional devices.
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Este trabalho visa a obtenção e o estudo das características dos revestimentos de AlN e TiN em substratos metálicos, produzidos por pulverização catódica em plasma magnetrão, num equipamento com cátodo oco, desenvolvido no LEF do CEFITEC. Este equipamento foi adaptado para o presente trabalho, através de alguns elementos adicionais, designadamente de um porta-amostras que permitiu o revestimento de provetes em lotes. Deste estudo conclui-se que a aplicação de uma tensão de “bias” na amostra altera a morfologia dos revestimentos e as características dos materiais que constituem o filme, não só no que diz respeito à sua composição, como também proporciona estruturas mais densas e com menos porosidade. As tensões de “bias” típicas foram de –100 V no caso de AlN e de –75 V e com uma potência de 2,0 kW no cátodo no caso de TiN. Neste último foi considerado apenas o objectivo da obtenção da fase d, de estrutura CFC (cor dourada), por ser a única de interesse industrial. Por difracção de raios x verificou-se a obtenção de TiN e TiN0,9 com as características pretendidas. Também se verificou que as tensões residuais dos filmes são de compressão e isotrópicas.
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Journal of Applied Physics, Vol. 96, nº3
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In partial fulfillment of the requirements for the degree of Doctor of Philosophy in Nanotechnologies and Nanosciences by Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia
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Dissertation submitted to obtain the phD degree in Biochemistry, specialty in Physical- Biochemistry, by the Faculdade de Ciências e Tecnologia from the Universidade Nova de Lisboa
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Dissertação apresentada para a obtenção do Grau de Doutor em Química Sustentável pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia
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J Biol Inorg Chem (2011) 16:1241–1254 DOI 10.1007/s00775-011-0812-9
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Biochemistry, 2011, 50 (20), pp 4251–4262 DOI: 10.1021/bi101605p
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J Biol Inorg Chem (2011) 16:183–194 DOI 10.1007/s00775-011-0753-3
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J Biol Inorg Chem (2010) 15:967–976 DOI 10.1007/s00775-010-0658-6
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Protein Sci. 2009 Mar;18(3):619-28. doi: 10.1002/pro.69.