7 resultados para Galkin, Ivan


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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores

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Dissertação apresentada para obtenção do Grau de Doutor em Química, perfil de Química Física, pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia

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Dissertation to obtain the Doctoral degree in Physics Engineering

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Dissertação para obtenção do Grau de Mestre em Energias Renováveis Conversão Elétrica e Utilização Sustentável

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O Ivan é um jovem rapper cuja vida, expressão artística e personalidade pretendo descrever no presente relatório de estágio através de uma perspectiva visual, com recurso à fotografia complementada com texto, apresentando as motivações, a força, as dificuldades e a vida, pessoal e de quem o rodeia. Através deste estágio realizado em conjunto com a Equipa de Apoio aos Imigrantes e Minorias Étnicas, pertencente à Câmara Municipal de Sintra, procurei ilustrar a forma como, a sua vida, a música e o bairro onde habita, se intersectam e influenciam mutuamente.

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Vanadium dioxide (VO2) is a promising material with large interest in construction industry and architecture, due to its thermochromic properties. This material may be used to create "smart" coatings that result in improvements in the buildings energy efficiency, by reducing heat exchanges and, consequently, the need for acclimatization. In this work, VO2 thin films and coatings were produced and tested in laboratory, to apply in architectural elements, such as glass, rooftop tiles and exterior paints. Thin films were produced by RF magnetron sputtering and VO2 nanoparticles were obtained through hydrothermal synthesis, aiming to create "smart" windows and tiles, respectively. These coatings have demonstrated the capability to modulate the transmittance of infrared radiation by around 20%. The VO2 nanoparticle coatings were successfully applied on ceramic tiles. The critical temperature was reduced to around 40ºC by tungsten doping. Ultimately, two identical house models were built, in order to test the VO2 coatings, in real atmospheric conditions during one of the hottest months of the year, in Portugal – August.

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Modern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW