Anomaly diagnosis in ceramic claddings by thermography - A review

With the increasing importance given to building rehabilitation comes the need to create simple, fast and non-destructive testing methods (NDT) to identify problems and for anomaly diagnosis. Ceramic tiles are one of the most typical kinds of exterior wall cladding in several countries; the earliest known examples are Egyptian dating from 4000 BC. This type of building facade coating, though being quite often used in due to its aesthetic and architectural characteristics, is one of the most complex that can be applied given the several parts from which it is composed; hence, it is also one of the most difficult to correctly diagnose with expeditious methods. The detachment of ceramic wall tiles is probably the most common and difficult to identify anomaly associated with this kind of cladding and it is also definitely the one that can compromise security the most. Thus, it is necessary to study a process of inspection more efficient and economic than the currently used which often consist in semi-destructive methods (the most common is the pull off test), that can only be used in a small part of the building at a time, allowing some assumptions of what can the rest of the cladding be like. Infrared thermography (IRT) is a NDT with a wide variety of applications in building inspection that is becoming commonly used to identify anomalies related with thermal variations in the inspected surfaces. Few authors have studied the application of IRT in anomalies associated with ceramic claddings claiming that the presence of air or water beneath the superficial layer will influence the heat transfer in a way that can be detected in both a qualitative and a quantitative way by the thermal camera, providing information about the state of the wall in a much broad area per trial than other methods commonly used nowadays. This article intends to present a review of the state of art of this NDT and its potentiality in becoming a more efficient way to diagnose anomalies in ceramic wall claddings.

Al-doped ZnO ceramic sputtering targets based on nanocrystalline powders produced by emulsion detonation synthesis – deposition and application as a transparent conductive oxide material

Transparent conducting oxides (TCOs) have been largely used in the optoelectronic industry due to their singular combination of low electrical resistivity and high optical transmittance. They are usually deposited by magnetron sputtering systems being applied in several devices, specifically thin film solar cells (TFSCs). Sputtering targets are crucial components of the sputtering process, with many of the sputtered films properties dependent on the targets characteristics. The present thesis focuses on the development of high quality conductive Al-doped ZnO (AZO) ceramic sputtering targets based on nanostructured powders produced by emulsion detonation synthesis method (EDSM), and their application as a TCO. In this sense, the influence of several processing parameters was investigated from the targets raw-materials synthesis to the application of sputtered films in optoelectronic devices. The optimized manufactured AZO targets present a final density above 99 % with controlled grain size, an homogeneous microstructure with a well dispersed ZnAl2O4 spinel phase, and electrical resistivities of ~4 × 10-4 Ωcm independently on the Al-doping level among 0.5 and 2.0 wt. % Al2O3. Sintering conditions proved to have a great influence on the properties of the targets and their performance as a sputtering target. It was demonstrated that both deposition process and final properties of the films are related with the targets characteristics, which in turn depends on the initial powder properties. In parallel, the influence of several deposition parameters in the film´s properties sputtered from these targets was investigated. The sputtered AZO TCOs showed electrical properties at room temperature that are superior to simple oxides and comparable to a reference TCO – indium tin oxide (ITO), namely low electrical resistivity of 5.45 × 10-4 Ωcm, high carrier mobility (29.4 cm2V-1s-1), and high charge carrier concentration (3.97 × 1020 cm-3), and also average transmittance in the visible region > 80 %. These superior properties allowed their successful application in different optoelectronic devices.