Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin films

A dc magnetron sputtering-based method to grow high-quality Cu2ZnSnS4 (CZTS) thin films, to be used as an absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post-growth KCN treatment for removal of possible undesired Cu2−xS phases. In this work, we report the results of a study of the effects of changing the precursors’ deposition order on the final CZTS films’ morphological and structural properties. The effect of KCN treatment on the optical properties was also analysed through diffuse reflectance measurements. Morphological, compositional and structural analyses of the various stages of the growth have been performed using stylus profilometry, SEM/EDS analysis, XRD and Raman Spectroscopy. Diffuse reflectance studies have been done in order to estimate the band gap energy of the CZTS films. We tested two different deposition orders for the copper precursor, namely Mo/Zn/Cu/Sn and Mo/Zn/Sn/Cu. The stylus profilometry analysis shows high average surface roughness in the ranges 300–550 nm and 230–250 nm before and after KCN treatment, respectively. All XRD spectra show preferential growth orientation along (1 1 2) at 28.45◦. Raman spectroscopy shows main peaks at 338 cm−1 and 287 cm−1 which are attributed to Cu2ZnSnS4. These measurements also confirm the effectiveness of KCN treatment in removing Cu2−xS phases. From the analysis of the diffuse reflectance measurements the band gap energy for both precursors’ sequences is estimated to be close to 1.43 eV. The KCN-treated films show a better defined absorption edge; however, the band gap values are not significantly affected. Hot point probe measurements confirmed that CZTS had p-type semiconductor behaviour and C–V analysis was used to estimate the majority carrier density giving a value of 3.3 × 1018 cm−3.

A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors

Thin films of Cu2SnS3 and Cu3SnS4 were grown by sulfurization of dc magnetron sputtered Sn–Cu metallic precursors in a S2 atmosphere. Different maximum sulfurization temperatures were tested which allowed the study of the Cu2SnS3 phase changes. For a temperature of 350 ◦C the films were composed of tetragonal (I -42m) Cu2SnS3. The films sulfurized at a maximum temperature of 400 ◦C presented a cubic (F-43m) Cu2SnS3 phase. On increasing the temperature up to 520 ◦C, the Sn content of the layer decreased and orthorhombic (Pmn21) Cu3SnS4 was formed. The phase identification and structural analysis were performed using x-ray diffraction (XRD) and electron backscattered diffraction (EBSD) analysis. Raman scattering analysis was also performed and a comparison with XRD and EBSD data allowed the assignment of peaks at 336 and 351 cm−1 for tetragonal Cu2SnS3, 303 and 355 cm−1 for cubic Cu2SnS3, and 318, 348 and 295 cm−1 for the Cu3SnS4 phase. Compositional analysis was done using energy dispersive spectroscopy and induced coupled plasma analysis. Scanning electron microscopy was used to study the morphology of the layers. Transmittance and reflectance measurements permitted the estimation of absorbance and band gap. These ternary compounds present a high absorbance value close to 104 cm−1. The estimated band gap energy was 1.35 eV for tetragonal (I -42m) Cu2SnS3, 0.96 eV for cubic (F-43m) Cu2SnS3 and 1.60 eV for orthorhombic (Pmn21) Cu3SnS4. A hot point probe was used for the determination of semiconductor conductivity type. The results show that all the samples are p-type semiconductors. A four-point probe was used to obtain the resistivity of these samples. The resistivities for tetragonal Cu2SnS3, cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4 are 4.59 × 10−2 cm, 1.26 × 10−2 cm, 7.40 × 10−4 cm, respectively.

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Study of optical and structural properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4×104cm−1 was measured in the energy range between 1.75 and 3.5 eV. The band gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.

Bridging the gap between closed and open data. System proposal for the Portuguese Legislation

Esta dissertação apresenta uma proposta de sistema capaz de preencher a lacuna entre documentos legislativos em formato PDF e documentos legislativos em formato aberto. O objetivo principal é mapear o conhecimento presente nesses documentos de maneira a representar essa coleção como informação interligada. O sistema é composto por vários componentes responsáveis pela execução de três fases propostas: extração de dados, organização de conhecimento, acesso à informação. A primeira fase propõe uma abordagem à extração de estrutura, texto e entidades de documentos PDF de maneira a obter a informação desejada, de acordo com a parametrização do utilizador. Esta abordagem usa dois métodos de extração diferentes, de acordo com as duas fases de processamento de documentos – análise de documento e compreensão de documento. O critério utilizado para agrupar objetos de texto é a fonte usada nos objetos de texto de acordo com a sua definição no código de fonte (Content Stream) do PDF. A abordagem está dividida em três partes: análise de documento, compreensão de documento e conjunção. A primeira parte da abordagem trata da extração de segmentos de texto, adotando uma abordagem geométrica. O resultado é uma lista de linhas do texto do documento; a segunda parte trata de agrupar os objetos de texto de acordo com o critério estipulado, produzindo um documento XML com o resultado dessa extração; a terceira e última fase junta os resultados das duas fases anteriores e aplica regras estruturais e lógicas no sentido de obter o documento XML final. A segunda fase propõe uma ontologia no domínio legal capaz de organizar a informação extraída pelo processo de extração da primeira fase. Também é responsável pelo processo de indexação do texto dos documentos. A ontologia proposta apresenta três características: pequena, interoperável e partilhável. A primeira característica está relacionada com o facto da ontologia não estar focada na descrição pormenorizada dos conceitos presentes, propondo uma descrição mais abstrata das entidades presentes; a segunda característica é incorporada devido à necessidade de interoperabilidade com outras ontologias do domínio legal, mas também com as ontologias padrão que são utilizadas geralmente; a terceira característica é definida no sentido de permitir que o conhecimento traduzido, segundo a ontologia proposta, seja independente de vários fatores, tais como o país, a língua ou a jurisdição. A terceira fase corresponde a uma resposta à questão do acesso e reutilização do conhecimento por utilizadores externos ao sistema através do desenvolvimento dum Web Service. Este componente permite o acesso à informação através da disponibilização de um grupo de recursos disponíveis a atores externos que desejem aceder à informação. O Web Service desenvolvido utiliza a arquitetura REST. Uma aplicação móvel Android também foi desenvolvida de maneira a providenciar visualizações dos pedidos de informação. O resultado final é então o desenvolvimento de um sistema capaz de transformar coleções de documentos em formato PDF para coleções em formato aberto de maneira a permitir o acesso e reutilização por outros utilizadores. Este sistema responde diretamente às questões da comunidade de dados abertos e de Governos, que possuem muitas coleções deste tipo, para as quais não existe a capacidade de raciocinar sobre a informação contida, e transformá-la em dados que os cidadãos e os profissionais possam visualizar e utilizar.

Expectation Gap na gestão e fiscalização de municipios

Nota: 18 valores