2 resultados para Relative growth ratio

em Instituto Politécnico do Porto, Portugal


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Hand-off (or hand-over), the process where mobile nodes select the best access point available to transfer data, has been well studied in wireless networks. The performance of a hand-off process depends on the specific characteristics of the wireless links. In the case of low-power wireless networks, hand-off decisions must be carefully taken by considering the unique properties of inexpensive low-power radios. This paper addresses the design, implementation and evaluation of smart-HOP, a hand-off mechanism tailored for low-power wireless networks. This work has three main contributions. First, it formulates the hard hand-off process for low-power networks (such as typical wireless sensor networks - WSNs) with a probabilistic model, to investigate the impact of the most relevant channel parameters through an analytical approach. Second, it confirms the probabilistic model through simulation and further elaborates on the impact of several hand-off parameters. Third, it fine-tunes the most relevant hand-off parameters via an extended set of experiments, in a realistic experimental scenario. The evaluation shows that smart-HOP performs well in the transitional region while achieving more than 98 percent relative delivery ratio and hand-off delays in the order of a few tens of a milliseconds.

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Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in order to study its structure and to establish the best growth precursors. SEM micrographs reveal an open columnar structure for most samples and EDS composition profiling of the cross sections show different selenium gradients. X-ray diffractograms show different shifts of the kesterite/stannite (1 1 2) peak, which indicate the presence of CZTSSe. From Raman scattering analysis, it was concluded that all samples had traces of CZTS and CZTSSe. The composition of the CZTSSe layer was estimated using X-ray diffraction and Raman scattering and both results were compared. It was concluded that Se diffused more easily in precursors with ternary Cu–Sn–S phases and metallic Zn than in precursors with ZnS and/or CZTS already formed. It was also showed that a combination of X-ray diffraction and Raman scattering can be used to estimate the ratio of S per Se in CZTSSe samples.