Growth and Raman scattering characterization of Cu2ZnSnS4 thin films

In the present work we report the results of the growth, morphological and structural characterization of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. The adjustment of the thicknesses and the properties of the precursors were used to control the final composition of the films. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition and structure of the films has been studied. With the presented method we have been able to prepare CZTS thin films with the kesterite structure.

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films. This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, CuxSnSx+1, SnxSy and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films’ characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect secondary phases.

Desenvolvimento e aplicação de um biossensor para monitorização de creatinina, um biomarcador associado a doenças emergentes

Este trabalho descreve o desenvolvimento de um material sensor para creatinina por impressão molecular em estrutura polimérica (MIP) e a sua aplicação no desenvolvimento de um dispositivo de natureza potenciométrica para a determinação da molécula alvo em fluidos biológicos. A creatinina é um dos biomarcadores mais utilizados no acompanhamento da doença renal, já que é um bom indicador da taxa de filtração glomerular (TFG). Os materiais biomiméticos desenhados para interação com a creatinina foram obtidos por polimerização radicalar, recorrendo a monómeros de ácido metacríclico ou de vinilpiridina e a um agente de reticulação apropriado. De modo a aferir o efeito da impressão da creatinina na resposta dos materiais MIP à sua presença, foram também preparados e avaliados materiais de controlo, obtidos sem impressão molecular (NIP). O controlo da constituição química destes materiais, incluindo a extração da molécula impressa, foi realizado por Espectroscopia de Raman e de Infravermelho com Transformada de Fourrier. A afinidade de ligação entre estes materiais e a creatinina foi também avaliada com base em estudos cinéticos. Todos os materiais descritos foram integrados em membranas selectivas de elétrodos seletivos de ião, preparadas sem ou com aditivo iónico lipófilo, de carga negativa ou positiva. A avaliação das características gerais de funcionamento destes elétrodos, em meios de composição e pH diferentes, indicaram que as membranas com materiais impressos e aditivo aniónico eram as únicas com utilidade analítica. Os melhores resultados foram obtidos em solução tampão Piperazine-N,N′-bis(2- ethanesulfonic acid), PIPES, de pH 2,8, condição que permitiu obter uma resposta quasi-Nernstiana, a partir de 1,6×10-5 mol L-1. Estes elétrodos demonstraram ainda uma boa selectividade ao apresentaram uma resposta preferencial para a creatinina quando na presença de ureia, carnitina, glucose, ácido ascórbico, albumina, cloreto de cálcio, cloreto de potássio, cloreto de sódio e sulfato de magnésio. Os elétrodos foram ainda aplicados com sucesso na análise de amostras sintéticas de urina, quando os materiais sensores eram baseados em ácido metacrilico, e soro, quando os materiais sensores utilizados eram baseados em vinilpiridina.

Desenvolvimento de um biossensor para monitorização de acetilcolina, um biomarcador associado à Doença de Alzheimer

A presente dissertação teve como objetivo o desenvolvimento e caracterização de sensores potenciométricos com base em polímeros de impressão molecular (MIP, do inglês, Molecularly Imprinted Polymer) para a determinação da molécula alvo, a acetilcolina. A acetilcolina (ACh) é um neurotransmissor que está associado à doença de Alzheimer. Os materiais biomiméticos desenvolvidos para a interação com a ACh foram obtidos por polimerização em bulk, recorrendo a uma combinação de nanotubos de carbono com monómeros de anilina, dispersos em solvente plastificante oNFOE e PVC. Para aferir sobre o efeito da impressão de ACh na resposta dos materiais MIP, foram igualmente preparados e avaliados materiais de controlo, ou seja, materiais sem impressão molecular (NIP). O controlo da constituição química destes materiais foi realizado recorrendo a Espectroscopia de Raman e Espectroscopia de Infravermelho com transformada de Fourier (FTIR, do inglês Fourier Transformed Infrared Spectroscopy). Os materiais desenvolvidos foram integrados em membranas seletivas de ião, preparadas com ou sem aditivo iónico lipófilo, de carga negativa ou positiva. A avaliação das características gerais das membranas baseou-se na comparação das caraterísticas dos diversos elétrodos. Estas caraterísticas foram obtidas a partir de curvas de calibração, conseguidas para valores de pH diferentes. Em meio ácido, mais precisamente para pH 4, as membranas com materiais impressos e aditivo aniónico foram as que apresentaram as melhores características analíticas, quer em termos de sensibilidade (+83,86 mV década-1) quer em gama de linearidade (de 3,52×10-5 a 1,73×10-3 M). O estudo de seletividade realizado aos sensores revelou que os elétrodos cuja membrana possuía aditivo aniónico apresentavam menores valores de log KPOT. A presença desse constituinte fez com que a seletividade aumentasse nesses mesmos elétrodos. A espécie menos interferente foi a creatina e a mais interferente a creatinina. Os elétrodos foram, ainda, aplicados em amostras de soro sintético. A qualidade dos resultados obtidos dependeu do nível de concentração em estudo, sendo possível identificar uma região onde os resultados foram exatos e precisos. De uma forma geral, os biossensores com MIP e aditivo aniónico apresentaram um desempenho adequado à prossecução deste estudo em amostras reais.

Avanços da ressonância magnética mamária no diagnóstico do carcinoma da mama

A Ressonância Magnética Mamaria (RMM), ao longo da década, tem demonstrado um franco desenvolvimento no diagnóstico e caracterização do Carcinoma Mamário. O objectivo deste trabalho científico é demonstrar, através de uma revisão bibliográfica, os avanços desta modalidade na avaliação das lesões da mama, tendo em conta as características: elasticidade (Elastografia), bioquímicas (Espectroscopia), celularidade (Difusão) e vascularização (Perfusão). A avaliação destas em consonância com as morfológicas e cinéticas (RMM), permitem um aumento da especificidade da RMM, reduzindo assim o número de biopsias desnecessárias. Contudo estas evoluções técnicas devem estar em consonância com a inovação em questões de software de processamento de Imagem e hardware dos equipamentos de Ressonância Magnética.

Autoxidação de ácidos gordos na presença de antioxidantes naturais e sintéticos

Nas últimas décadas, devido ao desenvolvimento económico, e a uma necessidade constante de gerir os recursos energéticos, existe uma necessidade de procurar novas fontes de energia, em particular fontes de energia renováveis. O biodiesel surge assim como uma energia alternativa ao combustível fóssil. Este biocombustível tem ganho uma importância significativa na sociedade moderna. Quimicamente o biodiesel é constituído por ésteres metílicos de ácidos gordos de cadeia longa, derivados de óleos vegetais ou gorduras animais. O principal problema que este enfrenta é a sua susceptibilidade à oxidação, devido ao seu conteúdo de ácidos gordos insaturados, logo existe uma procura constante de soluções que possam solucionar este problema. É necessária a identificação de técnicas e métodos para retardar a seu envelhecimento ao longo do tempo. O objectivo deste trabalho consiste no estudo da estabilidade do biodiesel ao longo do tempo, quando armazenado a diferentes condições de temperatura, superiores às normalmente suportadas pelo biodiesel durante o armazenamento, de modo a acelerar o processo de degradação. As amostras de biodiesel foram sujeitas a duas temperaturas. Uma amostra de biodiesel não estabilizado foi colocada a uma temperatura entre 40 e 50ºC ao longo de 203 dias, e uma outra amostra foi colocada a uma temperatura entre 95º e 105ºC ao longo de 146 dias. Realizaram-se ensaios semanais de modo registar a evolução do envelhecimento do biodiesel. As análises foram efectuadas por espectrofotometria de ultravioleta e visível (UV-VIS) e por espectroscopia de absorção na região do infravermelho (FTIR). No UV-VIS foi possível observar que o aumento de temperatura foi responsável pela aceleração da oxidação do biodiesel que resulta num aumento generalizado da absorvância do biodiesel. Através das análises efectuadas no FTIR verificou-se a formação e aumento da banda dos hidroperóxidos (grupo ROOH) localizada entre 3000 e 3600 cm-1 nos espectros, e igualmente um alargamento na banda dos carbonilos (grupo C=O) entre 1500 e 1900 cm-1. Numa fase posterior testaram-se antioxidantes para retardar o envelhecimento do biodiesel. Os ensaios foram efectuados a uma temperatura entre 95º e 105ºC. Os antioxidantes utilizados foram o galhato de propilo (PG), o galhato de etilo (EG) e o ácido gálhico (AG). Recorreu-se a técnicas como o UV-VIS e o FTIR para o registo dos espectros do biodiesel ao longo do tempo. Através destas técnicas foi possível verificar a influência de antioxidantes na estabilidade oxidativa do biodiesel. O PG foi o antioxidante que melhor desempenho mostrou no retardamento da oxidação do biodiesel e a técnica que melhor permitiu analisar a acção dos antioxidantes foi o UVVIS. Os resultados obtidos por FTIR não se mostraram tão conclusivos. Para caracterizar o envelhecimento do biodiesel não estabilizado e estabilizado utilizou-se também a cromatografia gasosa (CG) para quantificar a percentagem de ésteres metílicos presentes nas diferentes amostras no inicio e no fim do processo de oxidação. O biodiesel envelheceu mais rapidamente para temperaturas mais elevadas e comprovou-se que o antioxidante que melhor estabiliza o biodiesel é o PG.

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

In this work, tin selenide thin films (SnSex) were grown on soda lime glass substrates by selenization of dc magnetron sputtered Sn metallic precursors. Selenization was performed at maximum temperatures in the range 300 °C to 570 °C. The thickness and the composition of the films were analysed using step profilometry and energy dispersive spectroscopy, respectively. The films were structurally and optically investigated by X-ray diffraction, Raman spectroscopy and optical transmittance and reflectance measurements. X-Ray diffraction patterns suggest that for temperatures between 300 °C and 470 °C, the films are composed of the hexagonal-SnSe2 phase. By increasing the temperature, the films selenized at maximum temperatures of 530 °C and 570 °C show orthorhombic-SnSe as the dominant phase with a preferential crystal orientation along the (400) crystallographic plane. Raman scattering analysis allowed the assignment of peaks at 119 cm−1 and 185 cm−1 to the hexagonal-SnSe2 phase and those at 108 cm−1, 130 cm−1 and 150 cm−1 to the orthorhombic-SnSe phase. All samples presented traces of condensed amorphous Se with a characteristic Raman peak located at 255 cm−1. From optical measurements, the estimated band gap energies for hexagonal-SnSe2 were close to 0.9 eV and 1.7 eV for indirect forbidden and direct transitions, respectively. The samples with the dominant orthorhombic-SnSe phase presented estimated band gap energies of 0.95 eV and 1.15 eV for indirect allowed and direct allowed transitions, respectively.

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu2ZnSnS4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu2ZnSnS4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu2ZnSnS4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29–40 meV was estimated, and a value of 172 ±2 meV was obtained for the potential fluctuation in the valence-band edge.

Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin films

A dc magnetron sputtering-based method to grow high-quality Cu2ZnSnS4 (CZTS) thin films, to be used as an absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post-growth KCN treatment for removal of possible undesired Cu2−xS phases. In this work, we report the results of a study of the effects of changing the precursors’ deposition order on the final CZTS films’ morphological and structural properties. The effect of KCN treatment on the optical properties was also analysed through diffuse reflectance measurements. Morphological, compositional and structural analyses of the various stages of the growth have been performed using stylus profilometry, SEM/EDS analysis, XRD and Raman Spectroscopy. Diffuse reflectance studies have been done in order to estimate the band gap energy of the CZTS films. We tested two different deposition orders for the copper precursor, namely Mo/Zn/Cu/Sn and Mo/Zn/Sn/Cu. The stylus profilometry analysis shows high average surface roughness in the ranges 300–550 nm and 230–250 nm before and after KCN treatment, respectively. All XRD spectra show preferential growth orientation along (1 1 2) at 28.45◦. Raman spectroscopy shows main peaks at 338 cm−1 and 287 cm−1 which are attributed to Cu2ZnSnS4. These measurements also confirm the effectiveness of KCN treatment in removing Cu2−xS phases. From the analysis of the diffuse reflectance measurements the band gap energy for both precursors’ sequences is estimated to be close to 1.43 eV. The KCN-treated films show a better defined absorption edge; however, the band gap values are not significantly affected. Hot point probe measurements confirmed that CZTS had p-type semiconductor behaviour and C–V analysis was used to estimate the majority carrier density giving a value of 3.3 × 1018 cm−3.

A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors

Thin films of Cu2SnS3 and Cu3SnS4 were grown by sulfurization of dc magnetron sputtered Sn–Cu metallic precursors in a S2 atmosphere. Different maximum sulfurization temperatures were tested which allowed the study of the Cu2SnS3 phase changes. For a temperature of 350 ◦C the films were composed of tetragonal (I -42m) Cu2SnS3. The films sulfurized at a maximum temperature of 400 ◦C presented a cubic (F-43m) Cu2SnS3 phase. On increasing the temperature up to 520 ◦C, the Sn content of the layer decreased and orthorhombic (Pmn21) Cu3SnS4 was formed. The phase identification and structural analysis were performed using x-ray diffraction (XRD) and electron backscattered diffraction (EBSD) analysis. Raman scattering analysis was also performed and a comparison with XRD and EBSD data allowed the assignment of peaks at 336 and 351 cm−1 for tetragonal Cu2SnS3, 303 and 355 cm−1 for cubic Cu2SnS3, and 318, 348 and 295 cm−1 for the Cu3SnS4 phase. Compositional analysis was done using energy dispersive spectroscopy and induced coupled plasma analysis. Scanning electron microscopy was used to study the morphology of the layers. Transmittance and reflectance measurements permitted the estimation of absorbance and band gap. These ternary compounds present a high absorbance value close to 104 cm−1. The estimated band gap energy was 1.35 eV for tetragonal (I -42m) Cu2SnS3, 0.96 eV for cubic (F-43m) Cu2SnS3 and 1.60 eV for orthorhombic (Pmn21) Cu3SnS4. A hot point probe was used for the determination of semiconductor conductivity type. The results show that all the samples are p-type semiconductors. A four-point probe was used to obtain the resistivity of these samples. The resistivities for tetragonal Cu2SnS3, cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4 are 4.59 × 10−2 cm, 1.26 × 10−2 cm, 7.40 × 10−4 cm, respectively.

CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputtering

We report the results of the growth of Cu-Sn-S ternary chalcogenide compounds by sulfurization of dc magnetron sputtered metallic precursors. Tetragonal Cu2SnS3 forms for a maximum sulfurization temperature of 350 ºC. Cubic Cu2SnS3 is obtained at sulfurization temperatures above 400 ºC. These results are supported by XRD analysis and Raman spectroscopy measurements. The latter analysis shows peaks at 336 cm-1, 351 cm-1 for tetragonal Cu2SnS3, and 303 cm-1, 355 cm-1 for cubic Cu2SnS3. Optical analysis shows that this phase change lowers the band gap from 1.35 eV to 0.98 eV. At higher sulfurization temperatures increased loss of Sn is expected in the sulphide form. As a consequence, higher Cu content ternary compounds like Cu3SnS4 grow. In these conditions, XRD and Raman analysis only detected orthorhombic (Pmn21) phase (petrukite). This compound has Raman peaks at 318 cm-1, 348 cm-1 and 295 cm-1. For a sulfurization temperature of 450 ºC the samples present a multi-phase structure mainly composed by cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4. For higher temperatures, the samples are single phase and constituted by orthorhombic (Pmn21) Cu3SnS4. Transmittance and reflectance measurements were used to estimate a band gap of 1.60 eV. For comparison we also include the results for Cu2ZnSnS4 obtained using similar growth conditions.

Growth pressure dependence of Cu2ZnSnSe4 properties

In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.