Effects of early life permethrin exposure on spatial working memory and on monoamine levels in different brain areas of pre-senescent rats

Pesticide exposure during brain development could represent an important risk factor for the onset of neurodegenerative diseases. Previous studies investigated the effect of permethrin (PERM) administered at 34 mg/kg, a dose close to the no observable adverse effect level (NOAEL) from post natal day (PND) 6 to PND 21 in rats. Despite the PERM dose did not elicited overt signs of toxicity (i.e. normal body weight gain curve), it was able to induce striatal neurodegeneration (dopamine and Nurr1 reduction, and lipid peroxidation increase). The present study was designed to characterize the cognitive deficits in the current animal model. When during late adulthood PERM treated rats were tested for spatial working memory performances in a T-maze-rewarded alternation task they took longer to choose for the correct arm in comparison to age matched controls. No differences between groups were found in anxiety-like state, locomotor activity, feeding behavior and spatial orientation task. Our findings showing a selective effect of PERM treatment on the T-maze task point to an involvement of frontal cortico-striatal circuitry rather than to a role for the hippocampus. The predominant disturbances concern the dopamine (DA) depletion in the striatum and, the serotonin (5-HT) and noradrenaline (NE) unbalance together with a hypometabolic state in the medial prefrontal cortex area. In the hippocampus, an increase of NE and a decrease of DA were observed in PERM treated rats as compared to controls. The concentration of the most representative marker for pyrethroid exposure (3-phenoxybenzoic acid) measured in the urine of rodents 12 h after the last treatment was 41.50 µ/L and it was completely eliminated after 96 h.

Real-time fault injection using enhanced on-chip debug infrastructures

The rapid increase in the use of microprocessor-based systems in critical areas, where failures imply risks to human lives, to the environment or to expensive equipment, significantly increased the need for dependable systems, able to detect, tolerate and eventually correct faults. The verification and validation of such systems is frequently performed via fault injection, using various forms and techniques. However, as electronic devices get smaller and more complex, controllability and observability issues, and sometimes real time constraints, make it harder to apply most conventional fault injection techniques. This paper proposes a fault injection environment and a scalable methodology to assist the execution of real-time fault injection campaigns, providing enhanced performance and capabilities. Our proposed solutions are based on the use of common and customized on-chip debug (OCD) mechanisms, present in many modern electronic devices, with the main objective of enabling the insertion of faults in microprocessor memory elements with minimum delay and intrusiveness. Different configurations were implemented starting from basic Components Off-The-Shelf (COTS) microprocessors, equipped with real-time OCD infrastructures, to improved solutions based on modified interfaces, and dedicated OCD circuitry that enhance fault injection capabilities and performance. All methodologies and configurations were evaluated and compared concerning performance gain and silicon overhead.