Controlador dedicado de Ecrãs LCD/TFT

Para dar resposta aos grandes avanços tecnológicos e, consequentemente, à postura mais exigente dos clientes, a empresa Francisco Parracho – Electrónica Industrial, Lda., que tem actividade no ramo dos elevadores, decidiu introduzir no mercado um controlador dedicado de ecrãs Liquid Crystal Display / Thin Film Transistor (LCD / TFT). O objectivo é substituir um sistema suportado por um computador, caracterizado pelas suas elevadas dimensões e custos, mas incontornável até à data, nomeadamente para resoluções de ecrã elevadas. E assim nasceu este trabalho. Com uma selecção criteriosa de todos os componentes e, principalmente, sem funcionalidades inúteis, obteve-se um sistema embebido com dimensões e custos bem mais reduzidos face ao seu opositor. O ecrã apontado para este projecto é um Thin Film Transistor – Liquid Crystal Display (TFT-LCD) da Sharp de 10.4” de qualidade industrial, com uma resolução de 800 x 600 píxeis a 18 bits por píxel. Para tal, foi escolhido um micro-controlador da ATMEL, um AVR de 32 bits que, entre outras características, possui um controlador LCD que suporta resoluções até 2048 x 2048 píxeis, de 1 a 24 bits por píxel. Atendendo ao facto deste produto ser inserido na área dos elevadores, as funcionalidades, quer a nível do hardware quer a nível do software, foram projectadas para este âmbito. Contudo, o conceito aqui exposto é adjacente a quaisquer outras áreas onde este produto se possa aplicar, até porque o software está feito para se tornar bem flexível. Com a ajuda de um kit de desenvolvimento, foram validados os drivers dos controladores e periféricos base deste projecto. De seguida, aplicou-se esse software numa placa de circuito impresso, elaborada no âmbito deste trabalho, para que fossem cumpridos todos os requisitos requeridos pela empresa patrocinadora: - Apresentação de imagens no ecrã consoante o piso; - Possibilidade de ter um texto horizontalmente deslizante;Indicação animada do sentido do elevador; - Representação do piso com deslizamento vertical; - Descrição sumária do directório de pisos também com deslizamento vertical; - Relógio digital; - Leitura dos conteúdos pretendidos através de um cartão SD/MMC; - Possibilidade de actualização dos conteúdos via USB flash drive.

Growth pressure dependence of Cu2ZnSnSe4 properties

In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films. This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, CuxSnSx+1, SnxSy and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films’ characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect secondary phases.

A tecnologia fotovoltaica de película fina. Afinal como estamos?

Todos nós estamos familiarizados com os painéis fotovoltaicos comuns, os silicon wafer-based (“bolacha/pastilha” de silício), que possuem atualmente uma quota superior a 80% [1-3] no mercado solar fotovoltaico. Desde o seu “aparecimento” em 1950, foram realizados avanços em diferentes vertentes, como a eficiência, durabilidade, custos e tecnologias de produção [2, 4, 5], sendo que no início deste século se começaram a desenvolver e a criar expectativas positivas crescentes acerca do que se designa de células fotovoltaicas de película fina ou TFPC (thin film photovoltaic cells). Certamente, já todos ouvimos notícias nos últimos anos do seu desenvolvimento e de aplicações variadas (vestuário, fachadas, etc), pelo que este artigo visa elucidar o leitor acerca do que são, do seu grau de investigação e desenvolvimento (I&D) e da posição no mercado atual e futura.

Microcystin-LR detection in water by the Fabry–Pérot interferometer using an optical fibre coated with a sol–gel imprinted sensing membrane

Cyanobacteria deteriorate the water quality and are responsible for emerging outbreaks and epidemics causing harmful diseases in Humans and animals because of their toxins. Microcystin-LR (MCT) is one of the most relevant cyanotoxin, being the most widely studied hepatotoxin. For safety purposes, the World Health Organization recommends a maximum value of 1 μg L−1 of MCT in drinking water. Therefore, there is a great demand for remote and real-time sensing techniques to detect and quantify MCT. In this work a Fabry–Pérot sensing probe based on an optical fibre tip coated with a MCT selective thin film is presented. The membranes were developed by imprinting MCT in a sol–gel matrix that was applied over the tip of the fibre by dip coating. The imprinting effect was obtained by curing the sol–gel membrane, prepared with (3-aminopropyl) trimethoxysilane (APTMS), diphenyl-dimethoxysilane (DPDMS), tetraethoxysilane (TEOS), in the presence of MCT. The imprinting effect was tested by preparing a similar membrane without template. In general, the fibre Fabry–Pérot with a Molecular Imprinted Polymer (MIP) sensor showed low thermal effect, thus avoiding the need of temperature control in field applications. It presented a linear response to MCT concentration within 0.3–1.4 μg L−1 with a sensitivity of −12.4 ± 0.7 nm L μg−1. The corresponding Non-Imprinted Polymer (NIP) displayed linear behaviour for the same MCT concentration range, but with much less sensitivity, of −5.9 ± 0.2 nm L μg−1. The method shows excellent selectivity for MCT against other species co-existing with the analyte in environmental waters. It was successfully applied to the determination of MCT in contaminated samples. The main advantages of the proposed optical sensor include high sensitivity and specificity, low-cost, robustness, easy preparation and preservation.