Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Mo bilayer for thin film photovoltaics revisited

Thin film solar cells based on Cu(In,Ga)Se2 as an absorber layer use Mo as the back contact. This metal is widely used in research and in industry but despite this, there are only a few published studies on the properties of Mo. Properties such as low resistivity and good adhesion to soda lime glass are hard to obtain at the same time. These properties are dependent on the deposition conditions and are associated with the overall stress state of the film. In this report, a study of the deposition of a Mo bilayer is carried out by analysing first single and then bilayers. The best properties of the bilayer were achieved when the bottom layer was deposited at 10 × 10−3 mbar with a thickness of 500 nm and the top layer deposited at 1 × 10−3 mbar with a thickness of 300 nm. The films deposited under these conditions showed good adhesion and a sheet resistivity lower than 0.8 .

Study of optical and structural properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4×104cm−1 was measured in the energy range between 1.75 and 3.5 eV. The band gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.

Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films. This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, CuxSnSx+1, SnxSy and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films’ characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect secondary phases.

Quantification and viability analyses of Pseudokirchneriella subcapitata algal cells using image-based cytometry

This work aims to evaluate the feasibility of using image-based cytometry (IBC) in the analysis of algal cell quantification and viability, using Pseudokirchneriella subcapitata as a cell model. Cell concentration was determined by IBC to be in a linear range between 1 × 105 and 8 × 106 cells mL−1. Algal viability was defined on the basis that the intact membrane of viable cells excludes the SYTOX Green (SG) probe. The disruption of membrane integrity represents irreversible damage and consequently results in cell death. Using IBC, we were able to successfully discriminate between live (SG-negative cells) and dead algal cells (heat-treated at 65 °C for 60 min; SG-positive cells). The observed viability of algal populations containing different proportions of killed cells was well correlated (R 2 = 0.994) with the theoretical viability. The validation of the use of this technology was carried out by exposing algal cells of P. subcapitata to a copper stress test for 96 h. IBC allowed us to follow the evolution of cell concentration and the viability of copper-exposed algal populations. This technology overcomes several main drawbacks usually associated with microscopy counting, such as labour-intensive experiments, tedious work and lack of the representativeness of the cell counting. In conclusion, IBC allowed a fast and automated determination of the total number of algal cells and allowed us to analyse viability. This technology can provide a useful tool for a wide variety of fields that utilise microalgae, such as the aquatic toxicology and biotechnology fields.

Estudo electroquímico de compostos naturais e semicondutores com possível utilização em células foto voltaicas

As células foto voltaicas orgânicas ou células de Gräetzel (depois do seu descobridor) são aparelhos para a colecta de energia solar que utilizam um semicondutor inorgânico e uma molécula orgânica. Dita molécula orgânica é capaz de excitar-se na presença de radiação electromagnética e ceder esta energia através da doação de electrões a este semicondutor. Embora estas estruturas e o seu processo de fabrico sejam relativamente pouco onerosas, o aproveitamento da energia solar é ainda muito baixo. Para além desta deficiência, os corantes sintéticos sofrem de “bleaching” ou então são reduzidos ou oxidados facilmente quando não conseguem transferir a energia que foi absorvida ou quando é difícil voltar ao estado original por dificuldades no completamento de circulação de electrões. Neste trabalho pretende-se então estudar o comportamento de moléculas e misturas complexas de moléculas com capacidade para serem excitadas pela luz solar. Como a dita xcitação promove a transferência de um electrão, este processo será seguido pela técnica de Voltametria cíclica. Como substâncias absorventes de luz utilizaremos compostos naturais (principalmente flavonóides) puros, ou então na forma de complexos naturais extraídos de algumas plantas. Estas misturas de corantes serão extractos aquosos (infusões) de casca de laranja e limão assim como extractos de folhas de cerejeira, com o objectivo de proporcionar lternativas aos flavonóides utilizados neste estudo. A caracterização voltamétrica desta célula é feita em diferentes formas de iluminação. Sobre a célula assim formada faz-se incidir rimeiro luz de lâmpadas fluorescentes, depois luz ultra violeta e por fim sem qualquer tipo de luz incidente. Na base do fabrico da variante mais clássica destas células está o semicondutor óxido de itânio (TiO2), por ser uma substância muito comum e barata e com propriedades semicondutoras notáveis. Uma forma comum de melhorar a eficiência deste material é introduzir dopantes com o intuito de melhorar a eficiência do processo de transferência electrónica. Um segundo objectivo deste trabalho é o estudo de sistemas semicondutor/molécula foto activa. Semicondutores como ZnO, TiO2 e TiO2 dopado serão então estudados. O gels de TiO2 ou o TiO2 dopado serão depositados sobre lâminas de vidro comum, nas quais foi anteriormente depositado uma película de alumínio que serve de condutor (eléctrodo egativo). Uma outra variante será a utilização de óxido de zinco, um semicondutor de baixo custo que por sua vez vai ser depositado em lâminas de alumínio comercial. A nossa célula foto electroquímica será então formada por moléculas de corante, uma lâmina e um semicondutor (que funcionará como eléctrodo de trabalho), com ou sem electrólito/catalizador (solução de iodo/iodeto), e eléctrodos de referência de Ag/AgCl, e outro auxiliar de grafite. Um outro objectivo é fazer um pequeno estudo sobre influencia do catalisador I2/etilenodiamina no comportamento electroquímico da célula, de forma a poder utilizar o solvente (etilenodiamina) com menor volatilidade do que a água, que é empregada no par I2/I3.m A importância deste facto prende-se com a limitada vida destas células quando o electrólito/solvente é evaporado pelas altas temperaturas da radiação incidente.