3 resultados para spin Hall effect

em Repositório Científico do Instituto Politécnico de Lisboa - Portugal


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Fast Field Cycling (FFC) Nuclear Magnetic Resonance (NMR) relaxometers require controlled current sources in order to get accurate flux density with respect to its magnet. The main elements of the proposed solution are a power semiconductor, a DC voltage source and the magnet. The power semiconductor is commanded in order to get a linear control of the flux density. To implement the flux density control, a Hall Effect sensor is used. Furthermore, the dynamic behavior of the current source is analyzed and compared when using a PI controller and a PD2I controller.

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Fast Field Cycling (FFC) Nuclear Magnetic Resonance (NMR) relaxometers require controlled current sources in order to get accurate flux density with respect to its magnet. The main elements of the proposed solution are a power semiconductor, a DC voltage source and the magnet. The power semiconductor is commanded in order to get a linear control of the flux density. To implement the flux density control, a Hall Effect sensor is used. Furthermore, the dynamic behavior of the current source is analyzed and compared when using a PI controller and a PD2I controller.

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Here, we use Andreev reflection spectroscopy to study the spin polarization of high quality CrO2 films. We study the spin polarization as a function of growth temperature, resulting in grain size and electrical resistivity. In these films low temperature growth appears to be a necessary but not sufficient condition to guarantee the observation of high spin polarization, and this is only observed in conjunction with suppressed superconducting gap values and anomalously low interface properties. We suggest that this combination of observations is a manifestation of the long range spin triplet proximity effect. (C) 2007 American Institute of Physics.