Digital radiography detectors: a technical overview

Developments in digital detector technologies have been taking place and new digital technologies are available for clinical practice. This chapter is intended to give a technical state-of-the-art overview about computed radiography (CR) and digital radiography (DR) detectors. CR systems use storage-phosphor image plates with a separate image readout process and DR technology converts X-rays into electrical charges by means of a readout process using TFT arrays. Digital detectors offer several advantages when compared to analogue detectors. The knowledge about digital detector technology for use in plain radiograph examinations is thus a fundamental topic to be acquired by radiology professionals and students. In this chapter an overview of digital radiography systems (both CR and DR) currently available for clinical practice is provided.

PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.